Copper indium gallium selenide film solar battery and preparation method thereof

A technology of solar cells and copper indium gallium selenide, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost, poor uniformity in large areas, and high cost, so as to reduce preparation costs, improve safety, and accelerate industrial applications Effect

Active Publication Date: 2015-08-12
TSINGHUA UNIV
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Problems solved by technology

The photoelectric conversion efficiency of the battery prepared by the co-evaporation method is the highest, but this method is expensive, the process is complicated, and the large-area uniformity is poor, so it is not suitable for the preparation of large-area batteries.
The film prepared by the CIG metal prefabricated film selenization method has poor surface flatness and uneven distribution of components, and the selenization reaction needs to be carried out in the presence of toxic H 2 In Se atmosphere
In order to obtain large-area and high-quality CIGS thin films, the method of annealing after sputtering of quaternary CIGS targets is widely used. In order to suppress the loss of Se during the annealing process, the reaction needs to 2 Se atmosphere, so as to obtain CuInGaSe thin film with ideal composition, but H 2 The use of Se gas limits the application of this method
h 2 Se is a flammable and highly toxic gas, and the cost is high. The storage and operation of the gas need to be strictly restricted, which hinders the practical application of this process method.

Method used

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  • Copper indium gallium selenide film solar battery and preparation method thereof
  • Copper indium gallium selenide film solar battery and preparation method thereof
  • Copper indium gallium selenide film solar battery and preparation method thereof

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preparation example Construction

[0042] see figure 2 , the embodiment of the present invention provides a method for preparing the copper indium gallium selenide thin film solar cell 1, comprising the following steps:

[0043] 1) preparing the back electrode layer 20 on the substrate 10;

[0044] 2) using a sputtering target to sputter on the back electrode layer 20 to form an amorphous material film containing Se, Cu, In and Ga; and

[0045] 3) Annealing the amorphous material film, the annealing atmosphere is at least one of vacuum, rare gas (preferably argon) and nitrogen, the annealing temperature is 300 ° C ~ 600 ° C, and the heating rate is 1°C / min~100°C / min, the annealing time is 0.1 hour~3 hours, to obtain the light absorbing layer 30;

[0046] 4) forming a buffer layer 40 on the light absorbing layer 30; and

[0047] 5) Forming the window layer 50 on the buffer layer 40 .

[0048] Specifically, in the step 1), the back electrode layer 20 can be prepared on the surface of the substrate 10 by phys...

Embodiment 1

[0079] Embodiment 1: sputtering target and preparation method thereof

Embodiment 1-1

[0081] Weigh 290 g of CIGS powder, 50 g of elemental Se powder, 50 g of elemental Se powder, and 1800 g, put into a ball mill jar and mix. The ball milling medium is absolute ethanol, the ball milling speed is 300 rpm, and the ball milling time is 8 h. After ball milling, dry to obtain mixed powder. The target was prepared by atmospheric pressure sintering, the mixed powder was put into a press, and pressed in a mold with a pressure of 100 MPa and a holding time of 15 min. After demoulding, it was put into a sintering furnace, and sintered in a high-purity argon atmosphere with a sintering temperature of 600 oC, a heating rate of 10 oC / min, and a sintering time of 5 h. After sintering, the furnace was cooled to room temperature for sampling. The target has no defects such as cracks and cracks, the compactness rate reaches 95.7%, and the molar percentage of Se in the target is 55%.

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Abstract

The invention relates to a copper indium gallium selenide film solar battery and a preparation method thereof. The solar battery comprises a substrate, a back electrode layer arranged on the substrate, a light absorption layer arranged on the back electrode layer, a buffer layer arranged on the light absorption layer and a window layer arranged on the buffer layer, and is characterized in that the light absorption layer comprises a copper element (Cu), an indium element (In), a gallium element (Ga) and a selenium element (Se), the light absorption layer is formed by doping the Se element in the original position of Cu<y>(In<1-x>Ga<x>)Se2, and the mol ratio among the elements Se:(Cu+In+Ga) is greater than 1.0 and smaller than and equal to 1.5. The invention further relates to a preparation method of a copper indium gallium selenide film solar battery.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a copper indium gallium selenium thin film solar cell and a preparation method thereof. Background technique [0002] copper indium selenide (CuInSe 2 , referred to as CIS) is a thin-film solar cell as a representative of the third generation of solar cells, which has the advantages of high photoelectric conversion efficiency, stable performance, good radiation resistance and low preparation cost. The band gap of CIS is 1.04 eV, copper gallium selenide (CuGaSe 2 , referred to as CGS) has a forbidden band width of 1.68 eV. Substituting a certain amount of Ga for In in CIS can form copper indium gallium selenide (Cu(In 1-x Ga x ) Se 2 ) quaternary semiconductor materials, by adjusting the Ga content in copper indium gallium selenide, the bandgap width of the battery can be adjusted, and the photoelectric conversion efficiency of thin film solar cells can be further imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0392H01L31/032H01L31/0445H01L31/18
CPCH01L21/02568H01L21/02631H01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 赵明庄大明李晓龙曹明杰欧阳良琦詹世璐魏要伟
Owner TSINGHUA UNIV
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