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Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip

A technology based on bismuth sodium titanate and preferred orientation, applied in chemical instruments and methods, titanium compounds, inorganic chemistry, etc., can solve the problems of high cost of thin film preparation, harsh process, affecting device stability and reliability, etc.

Inactive Publication Date: 2015-08-19
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inhomogeneity of the structure will lead to the inhomogeneity of the performance, which will directly affect the stability and reliability of the device
However, the preparation of thin films with a single crystal structure is costly and the process is harsh.

Method used

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  • Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip
  • Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip
  • Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) According to Na 0.5 Bi 0.5 TiO 3 The stoichiometric ratio, accurately weighed 0.3446g of CH 3 COONa (excess 4%), 2.1167g of Bi(NO 3 ) 3 ·5H 2 O (excessive 8%) and polyethylene glycol 20,000 of 0.3g, standby. Accurately measure 2.78ml of acetylacetone in a beaker, then measure 2.78ml of tetra-n-butyl titanate dropwise into acetylacetone, stir on a magnetic stirrer for 4 hours to complete the chelation of titanium, defined as solution 1 . The weighed CH 3 COONa, Bi(NO 3 ) 3 ·5H 2 O was added to a beaker containing 15ml of glacial acetic acid, heated and stirred at 40°C until completely dissolved, and 5ml of ethylene glycol methyl ether was added, which was defined as solution 2. Add the weighed polyethylene glycol 20,000 into a beaker containing 5ml of ethylene glycol methyl ether, heat and stir at 50°C until all dissolve, and define it as solution 3. After all the solutions were cooled, solutions 2 and 3 were slowly added to solution 1, respectively. The...

Embodiment 2

[0039] (1) According to Na 0.5 Bi 0.5 Ti 0.98 mn 0.02 o 3-δ The stoichiometric ratio, accurately weighed 0.3446g of CH 3 COONa (excess 4%), 2.1167g of Bi(NO 3 ) 3 ·5H 2 O (8% excess), 0.0396g of C 4 h 6 MnO 4 4H 2 O and 0.3g of polyethylene glycol 20,000, spare. Accurately measure 2.72ml of acetylacetone in a beaker, then measure 2.72ml of tetra-n-butyl titanate dropwise into acetylacetone, stir on a magnetic stirrer for 6 hours to complete the chelation of titanium, defined as solution 1 . The weighed CH 3 COONa, Bi(NO 3 ) 3 ·5H 2 O, C 4 h 6 MnO 4 4H 2 O was added to a beaker containing 15ml of glacial acetic acid and heated and stirred at 50°C until it was completely dissolved, and then 5ml of ethylene glycol methyl ether was added, which was defined as solution 2. Add the weighed polyethylene glycol 20,000 into a beaker containing 5ml of ethylene glycol methyl ether, heat and stir at 70°C until all dissolve, and define it as solution 3. After all the s...

Embodiment 3

[0042] (1) According to Na 0.5 Bi 0.5 Ti 0.98 Zr 0.02 o 3 The stoichiometric ratio, accurately weigh 0.3446g of CH 3 COONa (excess 4%), 2.1167g of Bi(NO 3 ) 3 ·5H 2 O (excess 8%), 0.0639g of Zr (NO 3 ) 4 ·5H 2 O and 0.3g of polyethylene glycol 20,000, spare. Accurately measure 2.72ml of acetylacetone in a beaker, then measure 2.72ml of tetra-n-butyl titanate dropwise into acetylacetone, stir on a magnetic stirrer for 6 hours to complete the chelation of titanium, defined as solution 1 . The weighed Zr(NO 3 ) 4 ·5H 2 O Add 5ml of ethylene glycol methyl ether and heat and stir. While the solution is cooling, add 5ml of acetylacetone dropwise until clear. The weighed CH 3 COONa, Bi(NO 3 ) 3 ·5H 2 O was added to a beaker containing 15ml of glacial acetic acid and heated and stirred at 50°C until completely dissolved. The mixture of the above two solutions is defined as solution 2. Add the weighed polyethylene glycol 20,000 into a beaker containing 5ml ethylene...

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Abstract

The invention belongs to the field of electric functional materials, and particularly relates to a method for growing a (100) preferred orientation sodium bismuth titanate-based thin film on a silicon chip. The general formula of the series of thin films is Na0.5Bi0.5Ti1-yXyO3-delta, wherein X is doping element; y is the doping amount of the doping element; delta is the number of lost oxygen atoms for maintaining charge balance. According to the method provided by the invention, an optimized chemical solution deposition preparation technology is adopted, sodium bismuth titanate-based thin films having (100) preferred orientation are prepared on the silicon chip. The whole preparation technology process is simple and easy to control, the cost is low, the crystalline phase of the prepared thin film is single, and the degree of preferred orientation is high.

Description

technical field [0001] The invention belongs to the field of electronic functional materials and devices, and specifically relates to a method for growing (100) preferred orientation bismuth sodium titanate-based thin films on silicon substrates. Background technique [0002] In ferroelectric devices based on perovskite-structured ferroelectric-semiconductor heterostructures, it is difficult to deposit a single perovskite phase on a silicon substrate. For example, Kumar et al. deposited and grown PMN-PT films on different substrates [References: P. Kumar, Sonia, R.K. Patel, C. Prakash, T.C. Goel, Effect of substrates on phase formation in PMN-PT 68 / 32 thin films by sol-gel process, Mater. Chem. Phys , 2008, 110(1):7-10.]. The results of the study found that the perovskite phase deposited directly on the silicon reached only 49%. Similarly, sodium bismuth titanate (Na 0.5 Bi 0.5 TiO 3 ) film, due to the silicon substrate and Na 0.5 Bi 0.5 TiO 3 The mismatch in the f...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622C01G23/00
Inventor 杨长红冯超李姝欣韩亚洁胡雪卿焦芳莹钱进杜雄斌
Owner UNIV OF JINAN