Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Production method of miniature alkali metal atom chamber unit

An atomic gas chamber and alkali metal technology, applied in the field of micro-electromechanical systems, can solve the problems of precise injection of alkali metal elements, large amount of residue interference, etc.

Inactive Publication Date: 2015-09-09
NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The present invention solves the existing problems that the alkali metal elements cannot be accurately injected into the miniature alkali metal atomic gas chamber and the interference of a large amount of residues, and provides a preparation method of the miniature alkali metal atomic gas chamber unit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method of miniature alkali metal atom chamber unit
  • Production method of miniature alkali metal atom chamber unit
  • Production method of miniature alkali metal atom chamber unit

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0036] Specific embodiment one: the preparation method of the miniature alkali metal atom gas chamber unit of this embodiment is implemented according to the following steps:

[0037] 1. A single gas cell unit with an auxiliary gas chamber-working gas chamber structure is photoetched on a silicon wafer by photolithography and etching, and a microchannel is arranged between the auxiliary gas chamber and the working gas chamber to obtain of silicon wafers;

[0038] 2. Form a silicon dioxide layer on the surface of the silicon wafer after the photolithographic etching process obtained in step 1 by thermalization, and then use CVD to deposit a silicon nitride layer to obtain a silicon wafer with a mask layer;

[0039] 3. After preheating and dewatering the silicon wafer with the mask layer in step 2, apply photoresist evenly on the surface of the silicon wafer on the glue leveler to obtain a silicon wafer with a mask layer coated with photoresist, and then carry out Photolithogra...

specific Embodiment approach 2

[0049] Embodiment 2: This embodiment differs from Embodiment 1 in that the glass sheets described in steps 6 and 8 are Pyrex glass or BK7 series glass. Other steps and parameters are the same as those in Embodiment 1.

[0050] In this embodiment, the bonding optical window material should match the thermal expansion coefficient of the silicon material and be an optical glass with good optical properties.

specific Embodiment approach 3

[0051] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the thickness of the silicon dioxide layer in step 2 is 300 nm, and the thickness of the silicon nitride layer is 500 nm. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A production method of a miniature alkali metal atom chamber unit belongs to the field of micro-electro-mechanical systems, and solves the problems of unable accurate injection of alkali metal elements into present miniature alkali metal atom chambers and interference of a lot of residues. The production method of the miniature alkali metal atom chamber unit comprises the following steps: photoetching a single chamber unit on a silicon chip, depositing a silicon dioxide layer and a silicon nitride layer, smearing a photoresist, carrying out photoetching treatment, opening a silicon chip window, producing an activated miniature chamber framework substrate, bonding the substrate with a glass flake, evaporating a cesium azide film in a silicon-glass half chamber by using a deposition device, bonding the upper surface of the silicon-glass half chamber with another glass flake, and irradiating and heating by using an ultraviolet lamp to vaporize simple substance cesium in order to obtain the miniature alkali metal atom chamber unit. A cesium azide decomposition technology is adopted in the invention, so no residual substances are generated, and accurate control of the injection amount of cesium azide can be realized.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical systems (MEMS), and in particular relates to a processing method for a miniature alkali metal atomic gas chamber unit. Background technique [0002] With the advancement of micro-system technology, information-aware sensing systems are developing toward miniaturization and integrated arrays. In recent years, magnetic array imaging technology has been widely used in civilian and military medical fields, such as magnetic array magnetic brain imaging and magnetic array magnetic heart measurement. The magnetic array imaging system composed of microstructured atomic magnetometers has the characteristics of small size, low power consumption, and easy portability. It has become an effective method to replace the traditional bulky equipment of MRI. Applicable environment and scope of equipment. In 2009, the University of Florida Research Foundation Co., Ltd. developed a magnetic imaging technology...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C3/00B82Y15/00
Inventor 孙立凯徐兴烨王辉张鹏王劲松陈海涛
Owner NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products