Organic electroluminescent device and manufacturing method
An electroluminescent device, an organic technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of organic electroluminescent devices such as reduced luminous efficiency and inability to generate photons
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Embodiment 1
[0058] A method for preparing an organic electroluminescent device, comprising the steps of:
[0059] a) Production of anode conductive film: Rinse commercially available ordinary glass with distilled water and ethanol, soak it in isopropanol for one night, and use it as a glass substrate; An anode conductive film is prepared on the surface of the substrate, and the process conditions are: the degree of vacuum is 8×10 -4 Pa, the accelerating voltage is 700V, the magnetic field is 120G, and the power density is 25W / cm 2 ; The anode conductive film is made of indium tin oxide (ITO) with a thickness of 120nm.
[0060] b) Preparation of the electron blocking layer: The electron blocking layer is prepared on the surface of the anode conductive film by means of thermal resistance evaporation, and the process conditions are: the degree of vacuum is 8×10 -4 Pa, the evaporation rate is 2nm / s; the material of the electron blocking layer is cesium fluoride (CsF) and 3-hexylthiophene (3...
Embodiment 2
[0067] A method for preparing an organic electroluminescent device, comprising the steps of:
[0068] a) Production of anode conductive film: Rinse commercially available ordinary glass with distilled water and ethanol, soak it in isopropanol for one night, and use it as a glass substrate; An anode conductive film is prepared on the surface of the substrate, and the process conditions are: the degree of vacuum is 8×10 -4 Pa, the accelerating voltage is 700V, the magnetic field is 120G, and the power density is 25W / cm 2 ; The anode conductive film is made of indium tin oxide (ITO) with a thickness of 120nm.
[0069] b) Preparation of the hole injection layer: The hole injection layer was prepared on the surface of the anode conductive film layer by vacuum evaporation, and the process conditions were: the vacuum degree was 8×10 -4 Pa, the evaporation rate is 2nm / s; the hole injection layer is made of molybdenum trioxide (MoO 3 ), with a thickness of 35nm.
[0070] c) Prepara...
Embodiment 3
[0079] A method for preparing an organic electroluminescent device, comprising the steps of:
[0080] a) Production of anode conductive film: Rinse commercially available ordinary glass with distilled water and ethanol, soak it in isopropanol for one night, and use it as a glass substrate; An anode conductive film is prepared on the surface of the substrate, and the process conditions are: the degree of vacuum is 2×10 -3 Pa, the accelerating voltage is 300V, the magnetic field is 50G, and the power density is 40W / cm 2 ; The anode conductive film is made of indium-doped zinc oxide (IZO) with a thickness of 300nm.
[0081] b) Preparation of the hole injection layer: The hole injection layer was prepared on the surface of the anode conductive film layer by vacuum evaporation, and the process conditions were: the vacuum degree was 2×10 -3 Pa, the evaporation rate is 10nm / s; the hole injection layer is made of tungsten trioxide (WO 3 ), with a thickness of 20nm.
[0082] c) Pre...
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