Preparation method of high-manganese alloy film Mn53Ni23Ga24

A technology of high manganese alloy and thin film, which is applied in the preparation of high manganese alloy thin film Mn53Ni23Ga24 and the preparation of high manganese ferromagnetic shape memory alloy thin film. low degree of effect

Inactive Publication Date: 2015-09-30
DALIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention in order to solve the existing ferromagnetic shape memory alloy Mn 2 NiGa brittleness, low strength and other problems, and provide a high manganese alloy film Mn 53 Ni 23 Ga 24 preparation method

Method used

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  • Preparation method of high-manganese alloy film Mn53Ni23Ga24
  • Preparation method of high-manganese alloy film Mn53Ni23Ga24
  • Preparation method of high-manganese alloy film Mn53Ni23Ga24

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Embodiment 1

[0024] Take three kinds of metal elements with purity of 99.95at.%-Mn, 99.99at.%-Ni, and 99.99at.%-Ga as the target material, and put the target material into the vacuum non- In the consumable electrode electric arc furnace, the furnace cavity is evacuated before smelting, and the vacuum degree reaches 5×10 -3 Pa, filled with Ar protective gas. In order to make the composition of the material uniform, the material is turned over by a manipulator before each smelting, and the smelting is turned over at least 4 times, and magnetic stirring is added during the smelting process. After smelting, an ingot with a diameter of about 50mm is obtained. After being ground on the grinding wheel, the ingot was placed on a wire electric discharge machine and cut into a circular target with a diameter of 3mm×2mm. Quartz glass with a specification of 30mm×30mm×3mm is selected as the substrate of the thin film. Pretreatment of the glass substrate: wash the glass substrate with deionized wate...

Embodiment 2

[0026] Take three kinds of metal elements with purity of 99.95at.%-Mn, 99.99at.%-Ni, and 99.99at.%-Ga as the target material, and put the target material into the vacuum non- In the consumable electrode electric arc furnace, the furnace cavity is evacuated before smelting, and the vacuum degree reaches 5×10 -3 Pa, filled with Ar protective gas. In order to make the composition of the material uniform, the material is turned over by a manipulator before each smelting, and the smelting is turned over at least 4 times, and magnetic stirring is added during the smelting process. After smelting, an ingot with a diameter of about 50 mm is obtained. After being ground on the grinding wheel, the ingot was placed on a wire electric discharge machine and cut into a circular target with a diameter of 3mm×2mm. Quartz glass with a specification of 30mm×30mm×3mm is selected as the substrate of the thin film. Pretreatment of the glass substrate: wash the glass substrate with deionized wat...

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Abstract

The invention provides a preparation method of a high-manganese alloy film Mn53Ni23Ga24. The preparation method comprises the following steps: taking metal simple substances, namely Mn, Ni and Ga as target raw materials with the mole fraction ratio of Mn to Ni to Ga being 53:23:24, placing the target raw materials in a non-consumable vacuum arc furnace for smelting, vacuumizing to 5*10<-3>Pa, and then introducing shielding gas, so as to obtain a round target material; placing a pre-processed base plate and the target material in a vacuum system, and vacuumizing to 1.0*10<-4>Pa, wherein the temperature of the base plate is 500-700 DEG C, and the interval between the base plate and the target material is 3-5 cm; emitting lasers by a laser device, controlling the frequency to be 3-4 Hz, and sputtering for 1-3 hours, so as to prepare a film with required thickness; finally, annealing the film at the temperature of 800-900 DEG C, so as to obtain the high-manganese alloy film Mn53Ni23Ga24. According to the Mn53Ni23Ga24 alloy film prepared by the preparation method, the components are more precise, the roughness is low, the surface is smoother, the anisotropism is good, the martensite phase transformation temperature of the film is equivalent to that of block materials, required raw materials are low in price and rich in reserves, and the prepared alloy film is excellent in tenacity, high in strength, simple in technology, and easy for industrial production.

Description

technical field [0001] The invention belongs to the technical field of metal alloys, and relates to a new method for preparing a high manganese ferromagnetic shape memory alloy film, specifically a high manganese alloy film Mn 53 Ni 23 Ga 24 method of preparation. Background technique [0002] As a new type of smart material, magnetic shape memory alloys have the most prominent physical properties that this type of alloy has both magnetic transformation and thermoelastic martensitic transformation. Most of the reported candidates for magnetic shape memory alloys are Heusler alloys with highly ordered L2 1 structure. Recent studies have found that Mn 2 NiGa alloys are the only ones with non-L2 1 structure of Heusler alloy, the martensitic lattice │1-c / a│ can reach 21.3%, and the transformation from ferrimagnetic to ferromagnetic occurs during the martensitic transformation process, which is a new type with great application potential Magnetic shape memory alloys. At p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C23C14/58
Inventor 董桂馥
Owner DALIAN UNIV
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