Perovskite thin film as well as preparation method and application thereof

A perovskite and thin film technology, applied in the field of perovskite thin film and its preparation, can solve the problems of fast crystallization speed of perovskite crystal and inability to form dense continuous thin film, so as to shorten thermal annealing time and facilitate large-scale batch production The effect of production and improvement of photoelectric conversion efficiency

Inactive Publication Date: 2015-10-14
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Abstract
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Problems solved by technology

However, when lead halide is used as the precursor solution for preparing perovskite materials, due to the need for a long time thermal annealing treatment at a higher temperature after film formation, the perovskite crystal crystallization rate is too fast, resulting in perovskite crystals Shrink each other and cannot form a dense and continuous film

Method used

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  • Perovskite thin film as well as preparation method and application thereof
  • Perovskite thin film as well as preparation method and application thereof
  • Perovskite thin film as well as preparation method and application thereof

Examples

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Embodiment 1

[0042] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol in sequence, blown dry with nitrogen, and immediately placed in an ultraviolet ozone surface treatment equipment (UVO) for 15 minutes at 2000rpm The PEDOT:PSS solution was spin-coated at a certain speed, and annealed in the air at 150°C for 15 minutes to obtain an anode modification layer with a film thickness of about 30nm. Then PbI 2 with CH 3 NH 3I was dissolved in DMF (N, N-dimethylformamide) solution at a ratio of 1:1, heated for 12 hours to generate a perovskite precursor solution, and the concentration of the precursor solution was 30wt% at 2000-5000rpm Spin-coat on the anode modification layer at a rotating speed, and then thermally anneal for 1 hour, and the thickness of the film is 300nm±20nm. Then add 20mg / ml of PC 60 BM chlorobenzene solution was spin-coated on the above-ment...

Embodiment 2

[0044] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass is ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol in sequence, blown dry with nitrogen, and immediately put it into the ultraviolet ozone surface treatment equipment (UVO) for 10-20min. , spin-coat PEDOT:PSS solution at 2000rpm, and thermally anneal at 150°C for 15min in the air to obtain an anode modification layer with a film thickness of about 30nm. Then 300mg / mLLPbI 2 The DMF solution was spin-coated on PEDOT:PSS at 2000rpm for 30s, and thermally annealed at 100°C for 10min. 50mg / mL of CH 3 NH 3 I isopropanol solution was spin-coated on PbI at 6000rpm for 30s 2 above, thermal annealing at 100°C for 60 minutes to obtain a perovskite layer, and the thickness of the perovskite film is about 300nm±20nm. Then add 20mg / ml of PC 60 BM chlorobenzene solution was spin-coated on the above-mentioned perovskite layer at 1000rpm, and finally, at...

Embodiment 3

[0046] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol in sequence, blown dry with nitrogen, and immediately placed in ultraviolet ozone surface treatment equipment (UVO) for 15 minutes. The PEDOT:PSS solution was spin-coated at 2000rpm, and thermally annealed at 150°C for 15min in the air to obtain an anode modification layer with a film thickness of about 30nm. Then lead acetate and CH 3 NH 3 I was dissolved in DMF (N, N-dimethylformamide) solution at a ratio of 1:3 to obtain a precursor solution of perovskite, and the precursor solution with a mass fraction of 30 wt% was spin-coated at a speed of 4000rpm Spin-coat on the anode modification layer for 60s, then thermally anneal for 40min at a temperature of 80°C, and the thickness of the film is 300nm±20nm. Then add 20mg / ml of PC 60 BM chlorobenzene solution was spin-coated on the above-ment...

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Abstract

The present invention discloses a perovskite thin film as well as a preparation method and application thereof. The method comprises: taking lead acetate as a lead source and processing by a one-step solution method; and taking a mixed solution of the lead acetate and CH3NH3I as a precursor solution and coating the solution on a hole transporting layer to obtain the perovskite thin film. The obtained thin film can be used as the perovskite thin film which can be used in a perovskite solar battery. The lead acetate is used as a precursor of perovskite so that the flatness of a film surface is effectively improved and the compounding of carriers on an active layer interface is greatly reduced; and a solvent-resisting performance of materials is improved and the performance of the device is remarkably improved. The method also has the advantages of simple preparation process, low cost and good experiment repeatability and the like, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a perovskite thin film and its preparation method and application. Background technique [0002] The organometallic halides CH that have emerged in recent years 3 NH 3 PB 3 Perovskite solar cells have outstanding advantages such as high efficiency, low cost, light weight, simple manufacturing process, and can be fabricated into large-area flexible devices, so they have attracted much attention. The development of perovskite solar cells is very rapid. In less than four years, the cell efficiency has increased from less than 5% to 21%. [0003] Perovskite materials are currently mainly lead halide PbX 2 (X=Cl, Br, I), combine it with CH 3 NH 3 I react to directly generate perovskite film. However, when lead halide is used as the precursor solution for preparing perovskite materials, due to the need for a long time thermal annealing treatment at a h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/12H10K71/40Y02E10/549Y02P70/50
Inventor 谭占鳌李聪郭强乔文远程泰王福芝戴松元
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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