Method for preparing P-type low-defect silicon carbide epitaxial wafer

A silicon carbide and epitaxial wafer technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of long consumption time, limited effect of ultra-thick silicon carbide epitaxial wafers, and reduced quality of epitaxial layers, etc. The effect of period extension and reduction of basal plane dislocation density

Inactive Publication Date: 2015-10-21
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The traditional method is to reduce defects by adding a buffer layer between the substrate and the epitaxial layer, which has a certain effect on thin epitaxial wafers, but has limited effect on ultra-thick silicon carbide epitaxial wafers, due to the growth of ultra-thick silicon carbide epitaxial wafers. It takes a long time to process the epitaxial layer, and the environment in the growth chamber deteriorates with time, especially the deposits around and on the top, which will greatly reduce the quality of the epitaxial layer. Preparation method of ultra-thick silicon carbide epitaxial wafer

Method used

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  • Method for preparing P-type low-defect silicon carbide epitaxial wafer

Examples

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Embodiment 1

[0033] A method for preparing a P-type low-defect thickness 15um silicon carbide epitaxial wafer, comprising the following steps:

[0034] 1) Etching the substrate online: place a 4H-SiC substrate in the reaction chamber, vacuumize, and feed in hydrogen gas at a flow rate of 40L / min and HCl at a flow rate of 5L / min. The pressure in the reaction chamber is 40mbar and the temperature is 1680°C. minute;

[0035] 2) Growth of the buffer layer: Stop feeding HCl, lower the temperature to 1650°C, and feed SiH with a flow rate of 6mL / min 4 and 3mL / min of C 3 h 8 , using trimethylaluminum TMA with a flow rate of 1500mL / min as a dopant, and a growth pressure of 40mbar;

[0036] 3) Growth of epitaxial layer

[0037] a Growth: 40L / min flow rate of hydrogen, 10mL / min SiH 4 and 5mL / min of C 3 h 8 Pass it into the reaction chamber, keep the temperature at 1650°C and the pressure at 40mbar, and use trimethylaluminum TMA at a flow rate of 800mL / min as the dopant to grow an epitaxial lay...

Embodiment 2

[0042] A method for preparing a P-type low-defect thickness 30um silicon carbide epitaxial wafer, comprising the following steps:

[0043] 1) Etching the substrate online: place a 4H-SiC substrate in the reaction chamber, vacuumize, and feed in hydrogen gas at a flow rate of 40L / min and HCl at a flow rate of 5L / min. The pressure in the reaction chamber is 40mbar and the temperature is 1680°C. minute;

[0044] 2) Growth of the buffer layer: Stop feeding HCl, lower the temperature to 1650°C, and feed SiH with a flow rate of 6mL / min 4 and 3mL / min of C 3 h 8 , using trimethylaluminum TMA with a flow rate of 1500mL / min as a dopant, and a growth pressure of 40mbar;

[0045] 3) Growth of epitaxial layer

[0046] a Growth: 40L / min flow rate of hydrogen, 10mL / min SiH 4 and 5mL / min of C 3 h 8 Pass it into the reaction chamber, keep the temperature at 1650°C and the pressure at 40mbar, and use trimethylaluminum TMA at a flow rate of 800mL / min as the dopant to grow an epitaxial lay...

Embodiment 3

[0054] A method for preparing a P-type low-defect silicon carbide epitaxial wafer with a thickness of 80um, comprising the following steps:

[0055] 1) Etching the substrate online: place a 4H-SiC substrate in the reaction chamber, vacuumize, and feed in hydrogen gas at a flow rate of 40L / min and HCl at a flow rate of 5L / min. The pressure in the reaction chamber is 40mbar and the temperature is 1680°C. minute;

[0056] 2) Growth of the buffer layer: Stop feeding HCl, lower the temperature to 1650°C, and feed SiH with a flow rate of 6mL / min 4 and 3mL / min of C 3 h 8 , using trimethylaluminum TMA with a flow rate of 1500mL / min as a dopant, and a growth pressure of 40mbar;

[0057] 3) Growth of epitaxial layer

[0058] a Growth: 40L / min flow rate of hydrogen, 10mL / min SiH 4 and 5mL / min of C 3 h 8 Pass it into the reaction chamber, keep the temperature at 1650°C and the pressure at 40mbar, and use trimethylaluminum TMA at a flow rate of 800mL / min as the dopant to grow an epi...

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Abstract

The invention provides a method for preparing a P-type low-defect silicon carbide epitaxial wafer, comprising the steps of substrate preparation, online substrate etching, buffer layer growth and epitaxial layer growth, wherein the epitaxial layer is grown in an approach of 'growing, etching, blowing and re-growing'. By adopting the method, the dislocation density of the base plane is reduced effectively, the sediment in the cavity is reduced, the defect density of the silicon carbide epitaxial surface is reduced, and the quality of the silicon carbide epitaxial material is improved. Moreover, the method has a wide range of applications, makes the production cost low, and is suitable for industrial production.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material, in particular to a method for preparing a silicon carbide epitaxial wafer. Background technique [0002] Silicon carbide (SiC) is the third-generation semiconductor material developed after the first-generation semiconductor materials silicon, germanium and the second-band semiconductor materials gallium arsenide and indium phosphide. The wide bandgap of silicon carbide materials is silicon and arsenide 2-3 times that of gallium, so that semiconductor devices can work at a relatively high temperature (above 500 ° C) and have the ability to emit blue light; the high breakdown electric field is an order of magnitude higher than that of silicon and gallium arsenide, which determines As a semiconductor device, SiC has the characteristics of high voltage and high power, high saturation electron drift velocity and low dielectric constant, and has high frequency and high speed working p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30
CPCH01L33/30
Inventor 钮应喜杨霏
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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