Unlock instant, AI-driven research and patent intelligence for your innovation.

Ultraviolet photoelectric detector based on PFH/n-SiC organic-inorganic heterostructure

A heterogeneous structure and ultraviolet light technology, which is applied in the manufacture of organic semiconductor devices, electric solid devices, semiconductor/solid state devices, etc., can solve the problems that the preparation method of ultraviolet photodetector devices has not been reported, and achieve excellent photoelectric characteristics, sensitive response, The effect of strong process controllability

Active Publication Date: 2015-10-28
南京永纪光电科技有限公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, a fabrication method for UV photodetection devices based on PFH / n-SiC organic-inorganic heterostructures has not been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet photoelectric detector based on PFH/n-SiC organic-inorganic heterostructure
  • Ultraviolet photoelectric detector based on PFH/n-SiC organic-inorganic heterostructure
  • Ultraviolet photoelectric detector based on PFH/n-SiC organic-inorganic heterostructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Proceed as follows:

[0031] (1) Put the ITO transparent conductive glass sheet into V(HF):V(H 2 o 2 )=1:5 solution for 15 seconds (to remove the natural oxide layer), then ultrasonic cleaning with acetone, ethanol and deionized water for 15 minutes, and vacuum drying.

[0032] (2) Place the n-type SiC target with a purity of 99.9% on the target stage of the radio frequency magnetron sputtering system, fix the ITO substrate (half covered by the baffle) on the sample holder, and put it into the vacuum chamber, The distance between the SiC target and the ITO substrate was set at 4 cm.

[0033] (3) Vacuumize the chamber first, and when the ionization degree of the vacuum chamber is about 1.0×10-4Pa, pass in argon (Ar) to adjust the pressure in the vacuum chamber to 1.0Pa, then turn on the radio frequency power source and adjust the sputtering The spray power was 160w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering. The sp...

Embodiment 2

[0038] Steps (1), (2), (4) and (5) are all the same as in Example 1. Step (3) Vacuum the chamber first, and when the ionization degree of the vacuum chamber is about 1.0×10-4Pa, pass in argon (Ar) to adjust the pressure in the vacuum chamber to 1.2Pa, then turn on the radio frequency power source, adjust The sputtering power was 160w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering. The sputtering time was set to 3 hours, and the RF power source was turned off after the end. The thin film samples were taken out and transferred to a high temperature furnace for annealing at 1300°C for 4 hours, then cooled naturally.

[0039](6) Apply a voltage at both ends of the PFH / n-SiC heterostructure electrode to measure the photoelectric performance. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at a voltage of 0.5 volts. It is found that the control of the UV lamp switch, The current changes inst...

Embodiment 3

[0041] Steps (1), (2), (4) and (5) are all the same as in Example 1. Step (3) Vacuum the chamber first, and when the ionization degree of the vacuum chamber is about 1.0×10-4Pa, pass in argon (Ar) to adjust the pressure in the vacuum chamber to 1.2Pa, then turn on the radio frequency power source, adjust The sputtering power was 150w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering. The sputtering time was set to 5 hours, and the RF power source was turned off after the end. The thin film samples were taken out and transferred to a high temperature furnace for annealing at 1350°C for 4 hours, then cooled naturally.

[0042] (6) Apply a voltage at both ends of the PFH / n-SiC heterostructure electrode to measure the photoelectric performance. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at a voltage of 0.5 volts. It is found that the control of the UV lamp switch, The current changes ins...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of an ultraviolet photoelectric detector, and concretely relates to a preparation method of an ultraviolet photoelectric detector based on a PFH / n-SiC organic-inorganic heterostructure (PFH being poly 9,9-dihexylfluorene). The method includes the steps: forming an n-type SiC film through deposition on a transparent conductive glass ITO substrate by means of a radio frequency magnetron sputtering technology, forming a p-type PFH organic blue light film on the film through spin coating by a spin coating machine, and forming a golden film, which is about 100 nanometer in thickness and serves as an electrode, on the PFH and SiC film through deposition by a mask layer plate. A photoelectric property test result of the ultraviolet photoelectric detector shows that the detector exhibits a great photoelectric response. The advantages of the method and the detector are that the prepared photoelectric detector has steady performance, responses sensitively, is low in dark current and has great potential applications; and moreover, the preparation method has the characteristics of high process controllability, simple operate and good applicability, and thus has great application prospects.

Description

technical field [0001] The present invention relates to a preparation method of an ultraviolet photodetection device, specifically a preparation method of an ultraviolet photodetection device based on a PFH / n-SiC organic-inorganic heterogeneous structure (PFH is poly-9,9-dihexylfluorene) . technical background [0002] Ultraviolet detection technology is widely used in both military and civilian fields. It can be used for chemical and biological analysis, flame detection, high-voltage line corona detection, guidance, atmospheric environmental quality monitoring, ultraviolet light communication, disaster weather forecast, skyline communication, and illuminant calibration. and astronomical research. At present, commercialized semiconductor ultraviolet detectors are mainly based on wide-bandgap semiconductor inorganic materials, such as SiC, GaN, and ZnO. [0003] In recent years, with the development of organic semiconductor materials, researchers have also explored their ap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/164H10K85/111H10K30/15H10K2102/00Y02E10/549
Inventor 金康康
Owner 南京永纪光电科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com