TiB2 direct-current magnetron sputtering coating target prepared through vacuum gas shield pressure sintering

A DC magnetron sputtering and gas shielding technology, applied in sputtering coating, vacuum evaporation coating, ion implantation coating and other directions, can solve the problems of high raw material cost, easy cracking, difficult sintering and densification, etc. The effect of stable process, outstanding application value and short preparation cycle

Inactive Publication Date: 2015-11-04
GEMCH MATERIAL TECH SUZHOU
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

TiB is currently limited 2 The main problems of the rapid development of ceramics are: high cost of raw materials; difficult to sinter and densify, and the density of the prepared targets is low; it is impossible to prepare relatively large targets, and large-area targets are easy to crack during the preparation process; The thermal shock resistance is poor, and other properties of the material need to be further improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1: to the TiB that purity is 99.95% 2 The powder is ball milled to make the particle size small and uniform, then molded, sintered at T=1000°C, pressurized to 1MPa to obtain a semi-finished product, and finally the semi-finished product is processed to machine the sintered target body. Make sure all planes remain flat and the angles are at right angles to get TiB 2 Coated target. Then keep the pressure constant, increase the temperature to 1200°C and 1300°C, etc., and so on, do multiple sets of experiments respectively to obtain TiB with excellent performance 2 Coated target.

[0023] In the foregoing, TiB 2 The powder is a dark gray powder with uniform appearance and color, without visible impurities; physical and chemical properties include: specific gravity 4.52g / cm 3 , Melting point 2980 ℃, Mohs hardness > 9, resistivity 12μΩ·M, no reaction with acid and alkali, wear resistance, thermal shock resistance.

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PUM

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Abstract

The invention provides a TiB2 direct-current magnetron sputtering coating target prepared through vacuum gas shield pressure sintering. Ball mill is conducted on TiB2 powder with the purity being 99.95%, and then die filling is conducted; sintering is conducted at the temperature of 1000 DEG C, pressure is increased to 1 MPa, and then a semi-product is obtained; mechanical machining is conducted, it is guaranteed that all planes are kept level and the angles are right angles, and the TiB2 coating target is obtained. By the adoption of material design and an activated sintering technology, the hardness of a TiB2 film is improved, and the coating process is stable; the film layer is even, and the cost is low; the preparing cycle is short, and post-processing and other processes are not needed; and the TiB2 direct-current magnetron sputtering coating target prepared through vacuum gas shield pressure sintering is suitable for industrial production and has outstanding application value.

Description

technical field [0001] The invention relates to the coating technology of C23C sputtering metal materials in IPC classification or the products composed of thin layers of B32B layered products, which are applied in the fields of wear resistance, corrosion resistance, high temperature resistance, microelectronics, etc., especially vacuum gas protection pressure Preparation of TiB by sintering 2 DC magnetron sputtering coating target. Background technique [0002] Titanium boride (TiB 2 ) is a compound with high hardness and high stability. Its hardness is 35GPa, which is not only higher than that of various transition metal nitrides, but also TiB 2 The coefficient of friction is also lower than that of most transition metal nitrides, and it has a series of excellent physical and chemical properties such as high hardness, high melting point, high electrical conductivity, high thermal conductivity, and excellent chemical stability. For many engineering applications with seve...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C04B35/645
Inventor 贾泽夏庄志杰
Owner GEMCH MATERIAL TECH SUZHOU
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