Ceramic-polymer composite material, preparation method therefor and use thereof

A composite material and polymer technology, applied in the direction of fixed capacitor dielectric, fixed capacitor components, etc., can solve the problems of low dielectric constant temperature coefficient, circuit performance deterioration, and can not be used as the performance basis of microwave frequency band, etc., to achieve low dielectric Effects of Loss and Microwave Dielectric Properties Optimization

Active Publication Date: 2015-11-25
GUANGDONG SHENGYI SCI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Fourth, it has a low temperature coefficient of dielectric constant: a high temperature coefficient of dielectric constant will cause a large change in the performance of the capacitor, thereby deteriorating the performance of the circuit, which is very unfavorable in practical applications
The test data in these patents are all low-frequency test data, which cannot be used as the performance basis for applications in the microwave frequency band
Composite materials for embedded capacitors suitable for microwave frequency applications with the characteristics of low dielectric loss and adjustable dielectric temperature coefficient are still blank at home and abroad.

Method used

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  • Ceramic-polymer composite material, preparation method therefor and use thereof
  • Ceramic-polymer composite material, preparation method therefor and use thereof
  • Ceramic-polymer composite material, preparation method therefor and use thereof

Examples

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Effect test

Embodiment 1

[0074] According to K 0.46 Bi 0.5 MoO 3.98 Molecular formula weighs raw material K 2 CO 3 、 Bi 2 o 3 、MoO 3 , the raw materials are mixed evenly by planetary ball milling method, the rotating speed is 160rpm, and the time is 3-4 hours. The homogeneously mixed slurry was dried, placed in an alumina crucible, and calcined at 550°C±30°C for 2 hours. The calcined powder is pulverized and dried by planetary ball milling, and then calcined at 630°C±30°C for 2 hours to obtain K 0.46 Bi 0.5 MoO 3.98 Ceramic powder. The ceramic powder prepared above was mechanically crushed and passed through a 120-mesh sieve, and then further crushed by planetary ball milling for 8 hours. Place the pulverized ceramic powder in an alumina crucible and treat it at 580°C±30°C for 2 hours, and cool naturally to obtain the required K 0.46 Bi 0.5 MoO 3.98 Ceramic powder. Will K 0.46 Bi 0.5 MoO3.98 The ceramic powder is mixed with the epoxy glue according to the corresponding ratio, and the ...

Embodiment 2

[0078] Prepare K according to the method described in Example 1 0.46 Bi 0.5 MoO 3.98 For ceramic powder, add ceramic powder to ethanol solvent at a volume ratio of 20:100, and add PVP dispersant accounting for 3% of the mass of ceramic powder, stir until PVP is completely dissolved, and ultrasonically treat for 1 hour to obtain ceramic powder Body suspension; Ultrasonic the mixed solution of titanium isopropoxide (TIPP) in acetylacetone for 15 minutes, ultrasonic the mixed solution of titanium isopropoxide (TIPP) in acetylacetone for 15 to 20 minutes, then add the above ceramic powder suspension In the turbid solution, stir at a speed of 500rpm for 10 minutes, then change to a speed of 300rpm, heat up to 70°C for 12 hours, centrifuge the product after the reaction, and use a mixture of ethanol and acetone with a volume ratio of 1:1 , ethanol and distilled water for 3 times and dried in a vacuum at 60°C, put the dried product in a muffle furnace and raise the temperature to 6...

Embodiment 3

[0083] According to K 0.3 Bi 0.5 MoO 3.9 Molecular formula weighs each raw material K 2 CO 3 、 Bi 2 o 3 、MoO 3 , and prepare K according to the method described in Example 1 0.3 Bi 0.5 MoO 3.9 Ceramic powder, wherein the calcination and firing temperatures are 550°C±30°C and 640°C±30°C respectively. According to the method described in Example 1, the ceramic powder was pulverized and spheroidized, and the heat treatment temperature was 590°C±30°C.

[0084] Prepare K according to the method described in Example 1 0.3 Bi 0.5 MoO 3.9 TiO 2 Core-shell structure ceramic powder, in which TiO 2 The volume fractions are 5% and 10%, respectively.

[0085] The above-prepared K 0.46 Bi 0.5 MoO 3.98 Ceramic powder and K 0.3 Bi 0.5 MoO 3.9 TiO 2 The core-shell structure ceramic powder was mixed with epoxy glue at a volume fraction of 50%, and a composite material thick film was prepared according to the method described in Example 1. The microwave dielectric properti...

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Abstract

The invention discloses a ceramic-polymer composite material. The ceramic-polymer composite material comprises a polymer matrix and microwave medium ceramic powder filler, wherein the ceramic powder filler is any one or a mixture of any two of (A0.5-2xBi0.5)BO4-x, (Bi1.5C0.5-y)ZnO.5Nb1.5O7-y and (A0.5-2xBi0.5)BO4-x@TiO2 or (Bi1.5C0.5-y)Zn0.5Nb1.5O7-y@TiO2 ceramic powder with a core-shell structure, which is formed by coating a ceramic surface with TiO2. The composite material has relatively low dielectric loss (tan sigma being less than or equal to 0.2) within a microwave frequency band, has a dielectric constant temperature coefficient adjustable within a range of + / -100ppm / DEG C, and is a very valuable embedded type composite material for capacitors.

Description

technical field [0001] The invention relates to a ceramic-polymer composite material, a preparation method and its application, in particular to a ceramic-polymer composite material with low dielectric loss and adjustable dielectric temperature coefficient for embedded capacitors suitable for microwave frequency bands , preparation method and use thereof. Background technique [0002] With the rapid development of the information industry, "integration, high-speed, miniaturization, and multi-function" has become the development trend of the electronics industry. Under the guidance of this trend, discrete passive devices occupying most of the substrate area will gradually be replaced by embedded passive devices inside the multilayer substrate. Utilizing the embedding technology of passive components, embedding many passive components inside the circuit substrate can effectively reduce the use area of ​​the circuit substrate, reduce costs, avoid mutual interference between co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L63/00C08L79/08C08K3/00C08K9/02C08J5/18C08G73/10C04B35/453C04B35/622H01G4/12H01G4/18
Inventor 汪宏白元元向锋牛玉娟殷卫峰许永静
Owner GUANGDONG SHENGYI SCI TECH
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