Passivated emitter region back surface partial diffused crystalline silicon solar cell preparation method

Abstract

The invention discloses a passivated emitter region back surface partial diffused crystalline silicon solar cell preparation method. The method includes the following steps of: silicon wafer front surface inverted pyramid structure production; silicon wafer back surface partial region boron diffusion; silicon wafer front surface gate interdigital electrode heavy phosphorous diffusion; silicon wafer front surface light phosphorus diffusion; silicon wafer front surface silicon oxide (SiO2) anti-reflection passivation layer deposition; silicon wafer back surface silicon oxide (SiO2) passivation layer deposition; silicon wafer back surface electrode contact hole photoetching; silicon wafer front surface gate interdigital electrode lead hole photoetching, silicon wafer front surface gate interdigital electrode evaporation; silicon wafer back surface aluminum electrode evaporation; silicon wafer front surface electrosilvering and annealing; and solar cell formation. With the method of the invention adopted, the front surface of a cell is of an inverted pyramid structure, and the light receiving effect of the cell is better than that of an ordinary texturized surface structure, and the cell has very low reflectivity, and therefore, the Jsc of the cell can be improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a partially diffused crystalline silicon solar cell on the back of a passivated emission region. Background technique [0002] A solar cell is a device that effectively absorbs solar radiation energy and uses the photovoltaic effect to convert light energy into electrical energy. When sunlight shines on a semiconductor P-N junction (P-NJunction), a new hole-electron pair (V -Epair), under the action of the P-N junction electric field, holes flow from the N region to the P region, electrons flow from the P region to the N region, and a current is formed after the circuit is turned on. Because it is a solid semiconductor device that converts sunlight energy into electrical energy by using the photovoltaic effect of various potential barriers, it is also called a solar cell or a photovoltaic cell, and is an important component of a solar array power system...

AI Technical Summary

Problems solved by technology

The structure design of the battery is relatively simple, resulting in technical problems that cannot greatly improve the photoelectric conversion efficiency of the battery. For example, the energy of sunlight cannot be well utilized, forming a so-called "dead layer"

The metal electrode on the front surface cannot be made very narrow, otherwise it will block the effective absorption of light in the silicon wafer, the single diffusion technology cannot effectively solve the problems of electrode contact resistance, lateral resistance power consumption and short-wave response, and single-sided passivation cannot make reverse Saturation current density decline and other technical difficulties, in order to effectively improve the above problems, the present invention designs a new type of battery structure, the front of the battery adopts an "inverted pyramid" structure, the light receiving effect is better than the ordinary suede structure, and has a very low reflectivity, thus Increased battery Jsc

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