A kind of method for preparing vanadium pentoxide nano film at low temperature

A technology of vanadium pentoxide nanometer and vanadium pentoxide, which is applied in the field of low-temperature preparation of vanadium pentoxide nanometer film, to achieve the effect of uniform film layer, flexible method and high crystallinity

Active Publication Date: 2018-11-06
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned one or more problems encountered when the traditional sol-gel method is used to prepare vanadium pentoxide films, the present invention introduces molten vanadium pentoxide into water and adds a stabilizer to obtain a vanadium pentoxide sol, And use the pulling method to obtain the amorphous vanadium pentoxide film, and then heat-treat the gel film in a closed environment to obtain an oriented crystalline vanadium pentoxide film

Method used

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  • A kind of method for preparing vanadium pentoxide nano film at low temperature
  • A kind of method for preparing vanadium pentoxide nano film at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1 Preparation of vanadium pentoxide film at 300°C for 12 hours

[0032] The specific preparation method is as follows:

[0033] The first step is to clean the glass sheet: use piranha reagent (concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 7 to 3) to soak the glass substrate for 1 hour; the soaked glass sheet is ultrasonicated for 20 minutes with acetone, methanol, and ultrapure water in sequence, and then dried for later use ;

[0034] The second step, sol preparation: pour the vanadium pentoxide sol of 5g molten state into 200ml ultrapure water, after stirring at 1000 revolutions per minute for 1 hour, add PVP in the vanadium pentoxide sol by 6% mass ratio, continue Stir at 1600 rpm for 1 hour, set aside;

[0035] The third step, film forming process: use the constant temperature pulling machine of Shenyang Kejing, with the pulling speed of 500μm / s, the infiltration speed of 500μm / s, the infiltration time of 10s and the drying time of ...

Embodiment 2

[0038] Example 2 Preparation of vanadium pentoxide film at 180°C for 36 hours

[0039] The specific preparation method is as follows:

[0040] The first step is to clean the glass sheet: use piranha reagent (concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 7 to 3) to soak the glass substrate for 1 hour; the soaked glass sheet is ultrasonicated for 20 minutes with acetone, methanol, and ultrapure water in sequence, and then dried for later use ;

[0041] The second step, sol preparation: pour the vanadium pentoxide sol of 5g molten state into 200ml ultrapure water, after stirring at 1000 revolutions per minute for 1 hour, add PVP in the vanadium pentoxide sol by 6% mass ratio, continue Stir at 1600 rpm for 1 hour, set aside;

[0042] The third step, film forming process: use the constant temperature pulling machine of Shenyang Kejing, with the pulling speed of 500μm / s, the infiltration speed of 500μm / s, the infiltration time of 10s and the drying time of ...

Embodiment 3 to 7

[0046] Except for the contents shown in Table 1, the vanadium pentoxide thin film was prepared in the same manner as in Example 1, and its parameters are shown in Table 1 below.

[0047] Adopt SEM method known in the art to observe the uniformity of thin film and adopt the Japanese D / max-rb type X-ray diffractometer that can be purchased commercially, carry out scanning test to thin film with the speed of 1 degree / min, test result shows that also all Similar results were obtained. In comparison, Figures 1 to 2 effect is particularly pronounced.

[0048] The parameters adopted when each embodiment of table 1 prepares vanadium pentoxide thin film

[0049] Example number

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Abstract

The invention relates to a method of preparing vanadium pentoxide nano-films at a low temperature. The method is characterized by comprising the following steps of carrying out substrate cleaning, sol preparing, film forming, film aftertreatment and the like. The invention also relates to the vanadium pentoxide nano-films prepared by the method and application of the vanadium pentoxide nano-films in thermal-induced phase transition devices, electrochromic devices, or gas-sensitive devices and the like. The method provided by the invention has the advantages of being simple in film forming, low in cost, capable of being applied to large-area preparation, and the like; according to the method, heat treatment is carried out in a closed environment, so that the temperature for preparation is remarkably lowered, and the energy consumption and cost required for preparation are greatly reduced, and environmental pollution is reduced; the prepared vanadium pentoxide films are nano-films, thereby having relatively good crystallinity.

Description

technical field [0001] The invention relates to a method for preparing a nano film, in particular to a method for preparing a vanadium pentoxide nano film at a low temperature. Background technique [0002] Vanadium (V) has many valence states, so different vanadium oxy compounds have many important application values. For example, monoclinic vanadium dioxide (VO 2 ) has the characteristics of thermally induced phase change, and can be used in infrared stealth, smart windows, laser protection, electric switches, thermal switches and other fields. Similarly, vanadium pentoxide is arranged in layers of vanadium oxide hexahedrons, which is very conducive to the adsorption and detachment of charged particles between layers, and has a wide range of applications in electrochromic, supercapacitor and other fields. There are vacant orbitals in the d orbital, which has a very significant color changing effect when hydrogen ions are implanted into the vanadium pentoxide film, and is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/25
Inventor 李垚赵九蓬豆书亮王艺侯雪梅
Owner HARBIN INST OF TECH
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