Packaging structure and packaging method of a silicon-based module

Abstract

The invention relates to a packaging structure of a silicon-based module and a packaging method thereof, belonging to the technical field of semiconductor packaging. It includes a silicon base body, a silicon-based chip and metal core solder balls. The front side of the silicon-based chip is covered with a patterned passivation layer and an opening in the passivation layer exposing the upper surface of the electrode is opened. In the passivation layer opening A nickel / gold layer and solder balls are arranged, the metal core solder balls are arranged on the side of the silicon-based chip, and a rewiring metal layer is selectively arranged on the upper surface of the silicon base body, and the metal core solder balls are connected with the rewiring The metal layer is fixedly connected, the silicon-based chip is fixedly connected to the rewiring metal layer, and realizes electrical communication, and the top height of the solder ball is on the same plane as the top height of the metal core solder ball. The invention provides a packaging structure of a silicon-based module that has a simple packaging structure and ensures various performance indicators, and at the same time reduces the technical difficulty of the packaging method.

Description

technical field [0001] The invention relates to a packaging structure of a silicon-based module and a packaging method thereof, belonging to the technical field of semiconductor packaging. Background technique [0002] With the continuous development of the electronics industry, more and more devices are integrated on the printed circuit board PCB, so the miniaturization of a single device has become an inevitable trend in the development of device packaging technology. [0003] Among them, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a field effect transistor that uses an electric field effect to control a semiconductor. MOSFETs have received increasing attention in recent years due to their characteristic of enabling low power consumption voltage control. The source (Source) and gate (Gate) of the MOSFET chip are located on the front side of the chip, and its drain (Drain) is usually set on the back side of the chip. [0004] The packaging requirements...

AI Technical Summary

Problems solved by technology

The usual packaging method is to directly connect the drain to the lead frame or the substrate, and the source and the gate are indirectly connected to the lead frame or the substrate through a thick metal lead or a wide aluminum tape. The packaging structure of the package is often large, and only one side of the heat dissipation can be realized, and the current carrying capacity is often reduced because the heat dissipation cannot meet the demand

Of course, there are also a few products that are packaged with a clip package structure, which can realize double-sided heat dissipation, but the package structure is complicated, the package yield is low, and the production cost is high.

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