Preparation method of black phosphene nano sheet

A technology of nanosheets and black phosphorene, which is applied in the field of black phosphorene nanosheet preparation, can solve the problems of decreased electrical properties of two-dimensional materials, unsuitable for high-quality black phosphorene, limited peeling effect, etc., so as to avoid ultrasonic energy efficiency. Inadequate, Overcome Repeated Stripping Process, Wide Applicability Effect

Inactive Publication Date: 2016-01-13
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A large number of two-dimensional materials can be prepared by chemical exfoliation, but this method will introduce defects or phase transitions, resulting in a decrease in the electrical properties of two-dimensional materials, so it is not suitable for the preparation of high-quality black phosphorene
Recently, liquid-phase ultrasonic stripping has been considered as an effective way to prepare high-quality electronic-grade black phosphorene, and this method does not produce intermediate chemical reactions, but its disadvantage is that the stripping effect will be limited by the energy of the ultrasonic waves used and lengthy stripping times

Method used

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  • Preparation method of black phosphene nano sheet
  • Preparation method of black phosphene nano sheet
  • Preparation method of black phosphene nano sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Prepare a 0.01 mg / mL black phosphorus solution with 100 mL of dimethyl sulfoxide as an organic solvent.

[0028] (2) Pour the above mixed dispersion into a cooking machine equipped with 2 cutter blades at the bottom, and then seal the machine cover with a packaging film to prevent the liquid from splashing out during the operation of the machine.

[0029] (3) Turn on the power supply, control the input voltage, operate the high-speed rotating cutter head at a speed of 3000rpm / min, and shear and peel off for a total of 0.1h. At this time, the bulk black phosphorus is peeled into black phosphorene nanosheets.

[0030] (4) Centrifuge the obtained black phosphorene nanosheet dispersion at 1000rpm / min and take the upper liquid, filter it with a polytetrafluoroethylene filter membrane to obtain black phosphorene nanosheets, and re-disperse after repeated washing with alcohol and isopropanol into isopropanol to obtain single-layer and few-layer black phosphorene nanosheet ...

Embodiment 2

[0032] (1) Use 250mL of N,N-dimethylformamide as an organic solvent to prepare a 0.1mg / mL black phosphorus solution.

[0033] (2) Pour the above-mentioned mixed dispersion into a soymilk machine equipped with 4 cutter blades at the bottom, and then seal the machine cover with a packaging film to prevent the liquid from splashing out during the operation of the machine.

[0034] (3) Turn on the power supply, control the input voltage, the operating speed of the high-speed rotary cutter head is 9000rpm / min, and the total shearing and peeling time is 0.5h. At this time, the bulk black phosphorus is peeled into black phosphorene nanosheets.

[0035] (4) Centrifuge the obtained black phosphorene nanosheet dispersion at 2000rpm / min, take the upper layer, filter it with a polytetrafluoroethylene filter membrane to obtain black phosphorene nanosheets, and re-disperse after repeated washing with alcohol and isopropanol into isopropanol to obtain single-layer and few-layer black phospho...

Embodiment 3

[0037] (1) Use 500 mL of N-methylpyrrolidone as an organic solvent to prepare a 1 mg / mL black phosphorus solution.

[0038] (2) Pour the above-mentioned mixed dispersion into a soymilk machine equipped with 4 cutter blades at the bottom, and then seal the machine cover with a packaging film to prevent the liquid from splashing out during the operation of the machine.

[0039](3) Turn on the power supply, control the input voltage, operate the high-speed rotating cutter head at a speed of 15,000 rpm / min, and shear and peel off for a total of 1 hour. At this time, the bulk black phosphorus is peeled into black phosphorene nanosheets.

[0040] (4) Centrifuge the obtained black phosphorene nanosheet dispersion at 3000rpm / min and take the upper liquid, filter it with a polytetrafluoroethylene filter membrane to obtain black phosphorene nanosheets, and re-disperse after repeated washing with alcohol and isopropanol into isopropanol to obtain single-layer and few-layer black phosphor...

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Abstract

The invention discloses a preparation method of black a phosphene nano sheet. The black phosphene nano sheet is prepared by stripping black phosphorus crystals through liquid phase shear force generated by a high-speed rotation cutter head, wherein the whole preparation process is carried out in an argon environment. The preparation method particularly includes the following steps: placing the black phosphorus crystals and an organic solvent in a stirring barrel; setting the rotation speed of the high-speed rotation cutter head; connecting a power supply to drive the high-speed rotation cutter head to rotate in the stirring barrel; setting stripping time to prepare a dispersion liquid of the black phosphene nano sheet; and finally performing centrifugation, filtration and cleaning to obtain clean black phosphene nano sheets. The preparation method is low in cost and has potential of large-scale production.

Description

technical field [0001] The invention relates to a method for preparing black phosphorene nano-sheets based on the principle of liquid-phase shear peeling, which belongs to the nanotechnology of black phosphorene nano-sheet peeling. Background technique [0002] Two-dimensional nanomaterials such as graphene and transition metal sulfides have shown extraordinary application potential in many fields such as electronics, sensing and optoelectronic devices due to their excellent physical and structural properties. Among them, graphene has been widely studied as the most representative two-dimensional material. It has ultrahigh carrier mobility, but the lack of a band gap has severely hindered the application of graphene in logic semiconductor devices such as field-effect transistors. As a representative member of the transition metal sulfide semiconductor family, molybdenum disulfide (MoS 2 ) has a significant band gap and exhibits excellent switching ratio characteristics in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/02
Inventor 徐峰朱重阳闵辉华李正锐夏委委李胜利孙立涛
Owner SOUTHEAST UNIV
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