Method for preparing metal electrode on diamond anvil cell

A diamond anvil and metal electrode technology, applied in metal material coating technology, circuits, electrical components, etc., can solve the problems of large error, difficult operation, small anvil surface, etc., and achieve easy operation, simple operation and simple process Effect

Active Publication Date: 2016-01-20
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method requires photolithography on the anvil surface of hundreds of microns of diamond. Since th

Method used

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  • Method for preparing metal electrode on diamond anvil cell
  • Method for preparing metal electrode on diamond anvil cell
  • Method for preparing metal electrode on diamond anvil cell

Examples

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Embodiment 1

[0034] refer to Figure 2 to Figure 4 , the method for preparing a metal electrode on a diamond anvil provided in Example 1 of the present invention will be described in detail below.

[0035] The first step is to prepare a hollow metal mask. The hollow metal mask is a nickel metal sheet, which is composed of a hollow area and a solid area. The hollow area is the required hollow electrode pattern, the solid area is nickel metal, and the area other than the pattern belongs to the nickel metal solid area. Its preparation method is as figure 2 As shown, it includes: (1) preparing a chromium-gold seed layer with a thickness of 10 nanometers on the surface of a cleaned polished silicon wafer by thermal evaporation. (2) Spin-pattern photoresist (4620) on the surface at 1000 rpm, pre-baked at 90 degrees for 30 minutes, with a thickness of 25 microns, and exposed to the ultraviolet lithography machine for 200 seconds, at a concentration of 7.5 parts per thousand of hydrogen Develo...

Embodiment 2

[0039] The method for preparing a metal electrode on a diamond anvil provided by Example 2 of the present invention will be described in detail below.

[0040] In step 1, a chromium-gold seed layer with a thickness of 10 nanometers is prepared on the surface of the silicon wafer by thermal evaporation.

[0041] Step 2, apply photoresist (4620) on the surface of the silicon wafer in step 1 by spin coating at 1000 rpm, pre-bake at 90°C for 30 minutes, and the thickness of the photoresist is 25 microns.

[0042] Step 3, covering the surface of the silicon wafer coated with photoresist with the ultraviolet lithography mask plate with the electrode pattern, exposing the ultraviolet lithography machine for 60 seconds, and developing for 5 minutes with 7.5 / 1000 sodium hydroxide developer solution, A photoresist electrode pattern is obtained on the surface of the silicon wafer.

[0043] Step 4, electroplating nickel metal with a thickness of 20 microns on the surface of the silicon waf...

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Abstract

The invention discloses a method for preparing a metal electrode on a diamond anvil cell. The method is that an electrode structure which is 10 microns in width is prepared on a round diamond anvil cell surface of which the diameter is 300 microns; and the method comprises the steps as follows: a hollow metal mask with an electrode pattern structure is prepared; the hollow metal mask and the diamond anvil cell surface are aligned and fixed, so that the hollow metal mask covers the surface of the diamond anvil cell surface; a metal electrode is sputtered on the surface of the diamond anvil cell surface with the hollow metal mask; and the hollow metal mask is removed. Preparation of the metal electrode on the diamond anvil cell is finished by an ultraviolet lithography technology, an alignment technology and an ion beam sputter coating technology; the electrode structure which is 10 microns in width can be prepared on the round diamond anvil cell surface of which the diameter is 300 microns; the method is simple to operate; the lithography process on the diamond anvil cell surface in a traditional technology is avoided; and the method is simple in process and easy to operate.

Description

technical field [0001] The invention relates to the technical field of semiconductor micromachining, in particular to a method for preparing a metal electrode on a diamond anvil. Background technique [0002] The diamond anvil technology is a high-pressure technology developed in the middle of the 20th century, which can make the sample obtain extremely high pressure. The resistance test under high pressure will observe the change of resistance with pressure. Resistance generally decreases with increasing pressure. However, when the crystal structure or energy band structure changes, the resistance has a sudden change. Therefore, resistance measurement can be used to observe the crystal structure phase transition and electronic structure phase transition of substances under high pressure. In order to observe the electrical properties such as the resistance change of the substance under high pressure, it is necessary to prepare an electrode structure on the surface of the di...

Claims

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Application Information

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IPC IPC(8): H01L21/02B81C1/00
CPCB81C1/00373H01L21/02697
Inventor 刘静伊福廷李延春张天冲王波张新帅孙钢杰王雨婷
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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