Preparation method for a large-area single-layer or few-layer molybdenum disulfide film

A molybdenum disulfide, large-area technology, applied in the field of preparation of large-area single-layer and few-layer molybdenum disulfide thin films, can solve the problems affecting the generation and film formation of molybdenum disulfide, low sulfur source concentration and vapor pressure, and large airflow reaction etc. to achieve the effect of increasing concentration and vapor pressure, high repetition rate, and low equipment requirements

Inactive Publication Date: 2016-01-27
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are generally two problems in the existing chemical vapor deposition methods: first, the gas flow has a great influence on the reaction, because the protective gas introduced is also the carrier of the sulfur source, so sligh

Method used

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  • Preparation method for a large-area single-layer or few-layer molybdenum disulfide film
  • Preparation method for a large-area single-layer or few-layer molybdenum disulfide film
  • Preparation method for a large-area single-layer or few-layer molybdenum disulfide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A quartz test tube with a length of 20 cm and an inner diameter of 25 mm and two quartz boats with a length of 30 mm, a width of 8 mm and a height of 6 mm were ultrasonically cleaned with acetone, absolute ethanol and deionized water, and then dried in a drying oven spare.

[0021] SiO 2 (285nm) / Si substrates were cut into a size of 1cm×1cm, ultrasonicated in absolute ethanol for 5-10min, and then wiped dry with absorbent cotton dipped in absolute ethanol for later use.

[0022] Weigh 500 mg of sulfur powder with a purity of 99.5%, place it evenly in the quartz boat, place the quartz test tube flat, and slowly push the quartz boat containing the sulfur powder to the bottom of the quartz test tube.

[0023] Weigh 10 mg of molybdenum trioxide powder with a purity of 99.9%, place it evenly in another quartz boat, and put the cleaned and dried SiO 2 (285nm) / Si substrate is placed on the quartz boat that contains molybdenum trioxide powder, facing down, about 4mm away from...

Embodiment 2

[0030] A quartz test tube with a length of 30cm and an inner diameter of 30mm and two quartz boats with a length of 40mm, a width of 12mm and a height of 9mm were ultrasonically cleaned with acetone, absolute ethanol and deionized water, and then dried in a drying oven for later use. .

[0031] SiO 2 (285nm) / Si substrate was cut into a size of 1.5cm×1.5cm, ultrasonicated in absolute ethanol for 5-10min, and then dried with absorbent cotton dipped in absolute ethanol for later use.

[0032] Weigh 500 mg of sulfur powder with a purity of 99.5%, place it evenly in the quartz boat, place the quartz test tube flat, and slowly push the quartz boat containing the sulfur powder to the bottom of the quartz test tube.

[0033] Weigh 10 mg of molybdenum trioxide powder with a purity of 99.9%, place it evenly in another quartz boat, and put the cleaned and dried SiO 2 (285nm) / Si substrate is placed on the quartz boat containing molybdenum trioxide powder, face down, about 7mm away from th...

Embodiment 3

[0040] A quartz test tube with a length of 40cm and an inner diameter of 35mm and two quartz boats with a length of 50mm, a width of 15mm and a height of 12mm were ultrasonically cleaned with acetone, absolute ethanol and deionized water, and then dried in a drying oven for later use. .

[0041] SiO 2 (285nm) / Si substrate was cut into a size of 1.8cm×1.8cm, ultrasonicated in absolute ethanol for 5-10min, and then dried with absorbent cotton dipped in absolute ethanol for later use.

[0042] Weigh 500 mg of sulfur powder with a purity of 99.5%, place it evenly in the quartz boat, place the quartz test tube flat, and slowly push the quartz boat containing the sulfur powder to the bottom of the quartz test tube.

[0043] Weigh 10 mg of molybdenum trioxide powder with a purity of 99.9%, place it evenly in another quartz boat, and put the cleaned and dried SiO 2 (285nm) / Si substrate was placed on the quartz boat containing molybdenum trioxide powder, facing down, about 10mm away ...

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Abstract

The invention discloses a preparation method for a large-area single-layer or few-layer molybdenum disulfide film. The main steps of the preparation method are as follows: firstly, sulfur powder and molybdenum trioxide powder are placed in two quartz boats respectively, a substrate is placed on the quartz boat loaded with molybdenum trioxide powder, and the obverse surface faces downwards; secondly, the two quartz boats loaded with sulfur powder and molybdenum trioxide powder are placed at a bottom end and an orifice of a quartz test tube respectively; thirdly, the above quartz test tube is placed in a tubular furnace, the bottom end and the orifice of the test tube are located at the edge area and the central area of the tubular furnace respectively; fourthly, protection gas argon or nitrogen is inputted into the tubular furnace, a normal pressure is kept until the experiment is over; fifthly, the tubular furnace is heated at a certain heating speed, thus the edge area and the central area of the tubular furnace are in proper temperatures respectively, the temperatures are kept for some time, sulfur powder sublimates and reacts with gas phase molybdenum trioxide, and a large-area single-layer or few-layer molybdenum disulfide film is generated on the substrate; sixthly, the tubular furnace is cooled to the room temperature, and the preparation process is finished. The method is slightly affected by air flow, the repetition rate is high, preparation of high-quality large-area single-layer or few-layer molybdenum disulfide film can be achieved at a normal pressure.

Description

technical field [0001] The invention relates to the field of preparation of nanometer materials, in particular to a method for preparing a large-area single-layer and few-layer molybdenum disulfide film. Background technique [0002] With the advancement of semiconductor technology, silicon-based integrated circuits have encountered serious technical bottlenecks. There is such a law in the development of semiconductor technology: when the price remains unchanged, the number of transistors that can be accommodated on an integrated circuit, It will double every 18-24 months, and the performance will also double. This is the famous Moore's Law. But when the semiconductor process reaches a certain size close to the physical limit, Moore's Law will fail, which urgently requires us to find a new material to replace the current silicon-based semiconductor. In 2004, the discovery of single-layer graphene injected a booster into the field of microelectronics technology. Because gra...

Claims

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Application Information

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IPC IPC(8): C04B41/50
Inventor 王金斌肖君林钟向丽田自然李波
Owner XIANGTAN UNIV
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