Thin film transistor and manufacturing method thereof
A technology for thin film transistors and manufacturing methods, which is applied in the manufacture of transistors, semiconductor/solid-state devices, and electric solid-state devices, etc., can solve problems such as difficulty in uniformly removing damaged layers, increase processes, etc., and achieve the effects of suppressing static characteristics and suppressing oxidation.
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Embodiment 1
[0145] [Fabrication of TFT of Example of the Invention]
[0146] Based on the method described, first make figure 2 thin film transistor shown.
[0147] First, on a glass substrate 1 (EAGLEXG manufactured by Corning Incorporated, diameter 100 mm×thickness 0.7 mm), a Mo thin film having a thickness of 100 nm was sequentially formed as the gate electrode 2 and SiO 2 film (film thickness 250 nm) as the gate insulating film 3 . The gate electrode 2 was formed by DC sputtering using a pure Mo sputtering target under the conditions of film formation temperature: room temperature, film formation power: 300 W, carrier gas: Ar, and gas pressure: 2 mTorr. In addition, the above-mentioned gate insulating film 3 is formed of a carrier gas: SiH using a plasma CVD method. 4 with N 2 The film was formed under the conditions of a mixed gas of O, film formation power: 300 W, and film formation temperature: 350°C.
[0148] Next, the oxide semiconductor layer 4 (film thickness: 40 nm) was ...
Embodiment 2
[0209] The oxidation treatment after the formation of the SiOx film was as described in Table 3, except that after the formation of the SiNx film, further heat treatment, specifically, post-annealing at 250° C. for 30 minutes in a nitrogen atmosphere was carried out in the same manner as in Example 1. TFT.
[0210] Then, using the TFTs before and after the post-annealing, ΔV was obtained when the frequency sweep was repeated three times, specifically, the voltage was repeatedly swept from -30V to +30V, and then again from -30V to +30V. th .
[0211] The results are listed in Table 3 together. In addition, in some examples in Table 3, the hydrogen concentration in the said SiOx film after an oxidation process was calculated|required using the secondary ion mass spectrometry method shown in Example 3 mentioned later.
[0212] [table 3]
[0213]
[0214] From Table 3, the following conditions can be seen. By performing heat treatment (post annealing) after forming the seco...
Embodiment 3
[0216] Except that the oxidation treatment after the formation of the SiOx film is carried out in the atmospheric atmosphere at a heating temperature of 250°C, 300°C, 350°C, 400°C, or 500°C for 60 minutes, or without heat treatment, the source-drain electrodes are made of Mo single A TFT was fabricated in the same manner as in Example 1 in which the second protective film was a single layer of SiNx.
[0217] An element exclusively for resistivity measurement was prepared in which Mo electrode patterns of several 100 μm square were formed at the four corners of the oxide semiconductor layer patterned into a 5 mm square square. Using this resistivity value measuring element, the resistivity value of the oxide semiconductor layer was measured using the known Van der Pauw method as a resistivity value measuring method. Moreover, the static characteristic (S value) and the evaluation of stress tolerance were implemented similarly to Example 1 using the said TFT element. collating ...
PUM
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