A kind of semiconductor element and its preparation method

Abstract

The invention provides a semiconductor element, which avoids the formation of an amorphous layer on the surface of a silicon substrate by using a metal protective layer and a metal oxide protective layer grown on a substrate; and uses a transition layer to reduce the difference between the metal oxide protective layer and the metal oxide protective layer. The crystal lattice difference of the III-IV group buffer layer improves the crystal quality of the III-IV group buffer layer. The present invention also proposes a preparation method, which can avoid the formation of an amorphous layer near the interface of the silicon substrate and avoid the generation of cracks. At the same time, the high-quality multi-layer buffer structure deposited by PVD method is fully utilized, and gallium nitride or indium gallium nitride or aluminum gallium nitride epitaxial layers are grown on it to make light-emitting diode elements or transistor elements.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a semiconductor element and a preparation method thereof. Background technique [0002] The physical vapor deposition method (PVD method) has the characteristics of simple process, less environmental pollution, less raw material consumption, uniform and dense film formation, and strong bonding with the substrate. It is currently being increasingly used in the preparation of semiconductor components. Among them, it is usually used for the preparation of the bottom layer, such as depositing an aluminum nitride layer as a buffer layer, which can reduce and buffer defects and stresses caused by lattice mismatch and thermal mismatch between the substrate and the epitaxial layer, and improve semiconductor performance. Component quality. [0003] Compared with chemical vapor deposition, the atoms sputtered by PVD method have higher energy (generally 10~20eV) and stronger migrati...

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Problems solved by technology

However, at present, the physical vapor deposition method is used to directly grow aluminum nitride on the surface of silicon substrates, and it is easy to form an amorphous silicon oxide layer at the interface between the substrate and aluminum nitride, resulting in the deterioration of the quality of the subsequently formed aluminum nitride layer, resulting in the following Problem: The aluminum nitride layer is used as a stress buffer layer, and its ability to release stress is inconsistent, and the stress is concentrated on the amorphous silicon nitride layer on the interface, which is easy to cause cracks and destroy the quality of the entire semiconductor device; the aluminum nitride layer The densification becomes poor, and pores are formed. Then, when the gallium-containing nitride is deposited in the chemical vapor phase, the gallium element directly corrodes the silicon substrate through the pores, forming pits, and destroying the performance of the entire semiconductor device.

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