Preparation method of light absorption layer of CIGS-base thin film solar cell

A technology for solar cells and light-absorbing layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as uneven composition of light-absorbing layers, achieve the effect of reducing the number of surface defects and improving the yield

Active Publication Date: 2016-02-17
厦门神科太阳能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is inhomogeneity in the composition of the light-absorbing layer obtained after selenization by this method
If the component heterogeneity of the light absorbing layer is too large, it will not be possible to obtain a thin-film solar cell with excellent performance

Method used

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  • Preparation method of light absorption layer of CIGS-base thin film solar cell
  • Preparation method of light absorption layer of CIGS-base thin film solar cell
  • Preparation method of light absorption layer of CIGS-base thin film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Deposit a molybdenum electrode layer on the soda-lime glass substrate, then deposit a copper-gallium alloy film layer on the molybdenum electrode layer, then deposit a layer of indium layer on the copper-gallium alloy film layer, and then send the substrate into the heating furnace , using a vacuum pump to take out the gas in the heating furnace to maintain the pressure in the heating furnace at 10 -5 Torr;

[0050] Raise the temperature in the heating furnace from room temperature to 150°C and maintain it at 150°C for 60 minutes;

[0051] After that, the gas containing hydrogen selenide is passed into the heating furnace while maintaining the pressure in the furnace at 600 Torr, and the temperature in the heating furnace is raised from 150°C to 350°C, and maintained at 350°C for 120min;

[0052] After that, remove the residual selenium-containing substance gas in the heating furnace, and then feed nitrogen to maintain the pressure in the furnace at 600 Torr, and incre...

Embodiment 2

[0057] Deposit a molybdenum electrode layer on the soda-lime glass substrate, then deposit a copper-gallium alloy film layer on the molybdenum electrode layer, then deposit a layer of indium layer on the copper-gallium alloy film layer, and then send the substrate into the heating furnace , using a vacuum pump to take out the gas in the heating furnace to maintain the pressure in the heating furnace at 10 -5 Torr;

[0058] Raise the temperature in the heating furnace from room temperature to 250°C and maintain it at 250°C for 30s;

[0059] Afterwards, the gas containing hydrogen selenide is passed into the heating furnace while maintaining the pressure in the furnace at 600 Torr, and the temperature in the heating furnace is raised from 250°C to 450°C, and maintained at 450°C for 5 minutes;

[0060] Afterwards, the residual selenium-containing substance gas in the heating furnace is removed, and then nitrogen gas is introduced to maintain the pressure in the furnace at 600 To...

Embodiment 3

[0065] Deposit a molybdenum electrode layer on the soda-lime glass substrate, then deposit a copper-gallium alloy film layer on the molybdenum electrode layer, then deposit a layer of indium layer on the copper-gallium alloy film layer, and then send the substrate into the heating furnace , using a vacuum pump to take out the gas in the heating furnace to maintain the pressure in the heating furnace at 10 -5 Torr;

[0066] Raise the temperature in the heating furnace from room temperature to 160°C and maintain it at 160°C for 30 minutes;

[0067] After that, the gas containing hydrogen selenide is passed into the heating furnace while maintaining the pressure in the furnace at 400 Torr, and the temperature in the heating furnace is raised from 160°C to 380°C, and maintained at 380°C for 45min;

[0068] After that, remove the residual selenium-containing substance gas in the heating furnace, and then feed nitrogen to maintain the pressure in the furnace at 400 Torr, and increa...

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Abstract

The invention provides a preparation method of a light absorption layer of a CIGS-base thin film solar cell. The method comprises the following steps that: a substrate is provided, and a prefabricated layer is deposited on the substrate; an inert gas, a selenium-containing object and a sulfur-containing object are introduced into a heating furnace, and heat energy is transferred into the furnace, and temperature is increased to first temperature from room temperature, and keeps constant for a certain period at the first temperature; the temperature is increased to second temperature from the first temperature, and keeps constant for a certain period at the second temperature; the temperature is increased to third temperature from the second temperature, and keeps constant for a certain period at the third second temperature; the temperature is decreased to fourth temperature from the third temperature, and keeps constant for a certain period at the fourth second temperature; and the temperature is decreased to room temperature. With the preparation method of the invention adopted, the light absorption layer can have larger grains, and therefore, higher open-circuit voltage and a high fill factor can be realized.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, and more specifically, the invention provides a method for preparing a light-absorbing layer of a CIGS-based thin-film solar cell. Background technique [0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a direct bandgap P-type semiconductor material with an absorption coefficient as high as 10 5 / cm, 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS thin film is continuou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032
CPCH01L31/0322Y02E10/541
Inventor 李艺明邓国云
Owner 厦门神科太阳能有限公司
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