A surface passivation method for a germanium-base MOS device and an obtained germanium-base MOS device
A technology of MOS devices and germanium substrates, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the influence of leakage transistors on work, reduce thickness, increase dielectric constant, and avoid dielectric loss Effect
Inactive Publication Date: 2016-03-02
XIAN JIAOTONG LIVERPOOL UNIV
View PDF2 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Tunneling and huge leakage will have a huge impact on transistor operation if the size continues to shrink
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 2
[0040] Basic steps are the same as in Example 1, but the high-k value material adopted in step (5) is Al 2 o 3 .
Embodiment 3
[0042] The basic steps are the same as in Example 2, but in the step (4), the alkylmagnesium halide (R-Mg-X) is ethylmagnesium chloride, and in the step (5), the high-k material used is HfO 2 .
Embodiment 4
[0044] Basic steps are the same as embodiment 3, but in step (5), the high-k value material that adopts is Al 2 o 3 Doped with La 2 o 3 .
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a surface passivation method for a germanium-base MOS device, which is characterized in that a material with a high k value is deposited by using ALD, and an obtained germanium-base MOS device. The method comprises the steps of cleaning a germanium substrate; processing the germanium substrate by using an HF solution; processing the germanium substrate by using a chlorobenzene saturated PC 15 solution; finally performing processing by using an R-Mg-X solution of tetrahydrofuran to change Ge-C1 bonds to Ge-R and passivate the surface, wherein R is chain hydrocarbon and X is halogen; depositing a grid electrode dielectric material with a high k value on the surface of the passivated germanium substrate by using an ALD technology; depositing a metal electrode. The germanium-base MOS device is characterized by passivation of hydroxyl to the surface of the germanium substrate, so that the interface state density between the germanium substrate and gate dielectric is effectively reduced and the passivation effect is remarkably improved.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular, the invention relates to a method for surface passivation of a substrate of a germanium-based MOS device for ALD deposition of a high-k value material and a germanium-based MOS device. Background technique [0002] Silicon has always been an important semiconductor material in the modern electronics industry because the natural oxide of silicon is of very high quality and can be easily fabricated into metal-oxide-semiconductor field-effect transistors. After more than 40 years of continuous miniaturization, the feature size of semiconductor devices has entered the 45nm technology node, and the silicon-based MOSFET is approaching its basic physical limit. If the size continues to shrink, tunneling and huge leakage will have a huge impact on transistor operation. In order to reduce the gate tunneling current, reduce the power consumption of the device, eliminate the polysilicon ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L21/336H01L21/28
CPCH01L29/66477H01L21/28158
Inventor 陆骐峰吴京锦赵策洲
Owner XIAN JIAOTONG LIVERPOOL UNIV