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Bismuth magnesium titanate-lead titanate based high temperature piezoelectric material and preparation method thereof

A high-temperature piezoelectric, bismuth magnesium titanate technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, polycrystalline material growth, chemical instruments and methods, etc., can solve the problems of poor performance and difficult preparation, etc. Achieve the effect of preventing component deviation, low growth temperature, and convenient sealing

Active Publication Date: 2018-05-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention aims to overcome the defects of poor performance and difficult preparation of existing bismuth magnesium titanate-lead titanate high-temperature piezoelectric materials. The invention provides a bismuth magnesium titanate-lead titanate-based high-temperature piezoelectric material and its preparation method

Method used

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  • Bismuth magnesium titanate-lead titanate based high temperature piezoelectric material and preparation method thereof
  • Bismuth magnesium titanate-lead titanate based high temperature piezoelectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0052] 1. According to the chemical formula 0.49Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.51PbTiO 3 The stoichiometric ratio weighs PbO, Bi 2 o 3 , MgO and TiO 2 Raw material powder;

[0053] Two, take by weighing PbO accounting for 30% of the total weight of raw materials as a flux, fully mix and evenly obtain the starting material for crystal growth;

[0054] 3. Put the starting material into the platinum crucible and seal it, put the sealed platinum crucible into the alumina crucible, and then place it in the muffle furnace;

[0055] 4. The temperature in the muffle furnace is raised from room temperature to 1000°C for 4 hours and kept for 6 hours, then raised to 1200°C for 3 hours and then kept for 4 hours, and then the temperature in the muffle furnace is cooled to room temperature at a rate of 6°C / h;

[0056] 5. The crystal growth is completed, the crystal is out of the furnace, carefully peel off the crucible, and take out the crystal;

[0057] 6. Soak the crystal blank in aceti...

Embodiment 2

[0061] 1. According to the chemical formula 0.45Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.55PbTiO 3 The stoichiometric ratio weighs Bi 2 o3 , MgO, TiO 2 and Pb 3 o 4 Raw material powder;

[0062] 2. Weigh PbF accounting for 40% of the total weight of raw materials 2 As a flux, mix well and evenly to obtain the starting material for crystal growth;

[0063] 3. Put the starting material into the platinum crucible and seal it, put the sealed platinum crucible into the alumina crucible, and then place it in the muffle furnace;

[0064] 4. The temperature in the muffle furnace is raised from room temperature to 900°C for 4 hours and kept for 3 hours, then raised to 1180°C for 4 hours and kept for 4 hours, and then the temperature in the muffle furnace is cooled to room temperature at a rate of 10°C / h;

[0065] 5. The crystal growth is completed, the crystal is out of the furnace, carefully peel off the crucible, and take out the crystal;

[0066] 6. Soak the crystal blank with acetic acid...

Embodiment 3

[0069] 1. According to the chemical formula 0.40Bi(Mg 1 / 2 Ti 1 / 2 )O 3 -0.60PbTiO 3 The stoichiometric ratio weighs Bi 2 o 3 , MgO, TiO 2 and Pb 3 o 4 Raw material powder;

[0070] Two, weigh PbO and PbF that account for 50% of the total weight of raw materials 2 As a flux, mix well and evenly to obtain the starting material for crystal growth;

[0071] 3. Put the starting material into the platinum crucible and seal it, put the sealed platinum crucible into the alumina crucible, and then place it in the muffle furnace;

[0072] 4. The temperature in the muffle furnace is raised from room temperature to 900°C for 6 hours and kept for 4 hours, then raised to 1250°C for 5 hours and kept for 5 hours, and then the temperature in the muffle furnace is cooled to room temperature at a rate of 15°C / h;

[0073] 5. The crystal growth is completed, the crystal is out of the furnace, carefully peel off the crucible, and take out the crystal;

[0074] 6. Soak the crystal blank wi...

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Abstract

The invention relates to a bismuth magnesium titanate-lead titanate-based high-temperature piezoelectric material and a preparation method thereof. The bismuth titanate-lead titanate-based high-temperature piezoelectric material has an ABO3 perovskite type composite oxide structure, and consists of The chemical formula is (1‑x)Bi(Mg1 / 2Ti1 / 2)O3‑xPbTiO3+yA2Oa+zB2Ob, where 0.50

Description

technical field [0001] The invention belongs to the technical field of piezoelectric single crystal growth, and in particular relates to a bismuth magnesium titanate-lead titanate-based high-temperature piezoelectric material and a preparation method thereof. Background technique [0002] Piezoelectric material is a very important functional material, which can realize mutual conversion between electrical energy and mechanical energy through direct and inverse piezoelectric effects. Due to its unique dielectric, piezoelectric, ferroelectric, pyroelectric and other properties, it has been widely used in many high-tech fields such as military, aerospace, geological exploration, medical treatment, and communication. With the rapid development of electronic technology and computer control, piezoelectric devices such as high-precision drivers, detection transducers and sensors that can work stably in high-temperature and harsh environments are required in some special fields. As...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187H01L41/39H01L41/41C30B29/32C30B29/22C30B11/00C04B35/472C04B35/622H10N30/853H10N30/093H10N30/095
Inventor 陈夏夏许桂生刘锦峰杨丹凤刘莹
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI