Magnetic aluminum nitride thin film material of sphalerite structure and preparation method and application thereof

A thin film material, aluminum nitride technology, applied in chemical instruments and methods, magnetic layers, nitrogen compounds, etc., can solve problems such as poor symmetry, weak magnetism, and low Curie temperature, and achieve high Curie temperature and spin injection High efficiency and good room temperature stability

Active Publication Date: 2016-04-13
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the dilute magnetic semiconductors that have been discovered, the GaAs system has a sphalerite structure, which belongs to the cubic crystal system, and has high spin injection efficiency, but has weak magnetism and low Curie temperature; oxides represented by zinc oxide, although they

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Mix Al powder and Sc powder at a molar ratio of 76:24, sinter them into a target, choose NaCl as the substrate, and use a mixed atmosphere of nitrogen and argon (partial pressure ratio: 1:3) with a vacuum degree of 3Pa In this method, the (111) plane of NaCl is used as the epitaxial plane, and the deposition method is adopted on the substrate by radio frequency magnetron sputtering. 20nm Sc-doped aluminum nitride film.

[0023] The crystal structure of the Sc-doped aluminum nitride film is a sphalerite structure, which is composed of a face-centered cubic lattice of Al and a face-centered cubic lattice of N, wherein the sub-lattice of N is along the diagonal of the sub-lattice of Al Moving the distance of 1 / 4 diagonal length, Sc doping enters the AlN lattice, and its cation replaces the position of Al in the lattice.

[0024] The Curie temperature of the film measured by SQUID and VSM instruments was 124°C.

Embodiment 2

[0026] Mix AlN and ScN powders with a molar ratio of Al:Sc of 76:24, sinter them into targets, and use MgO as a substrate. The deposition method is pulsed laser deposition. The vacuum degree during deposition is 30Pa, and the deposition atmosphere is pure nitrogen. atmosphere, the (111) plane of MgO is used as the epitaxial plane, the deposition temperature is 750° C., and the thickness of the obtained Sc-doped aluminum nitride film is 20 nm.

[0027] The crystal structure of the Sc-doped aluminum nitride film is a sphalerite structure, which is composed of a face-centered cubic lattice of Al and a face-centered cubic lattice of N, wherein the sub-lattice of N is along the diagonal of the sub-lattice of Al Moving the distance of 1 / 4 diagonal length, Sc doping enters the AlN lattice, and its cation replaces the position of Al in the lattice.

[0028] The Curie temperature of the film measured by SQUID and VSM instruments was 124°C.

Embodiment 3

[0030] According to the steps of Example 2, only the material constituting the substrate was replaced by CrN, the vacuum during deposition was replaced by 25 Pa, and the deposition temperature was replaced by 780° C., and the thickness of the obtained Sc-doped aluminum nitride film was 20 nm.

[0031] The crystal structure of the Sc-doped aluminum nitride film is a sphalerite structure, which is composed of a face-centered cubic lattice of Al and a face-centered cubic lattice of N, wherein the sub-lattice of N is along the diagonal of the sub-lattice of Al Moving the distance of 1 / 4 diagonal length, Sc doping enters the AlN lattice, and its cation replaces the position of Al in the lattice.

[0032] The Curie temperature of the film measured by SQUID and VSM instruments was 124°C.

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Abstract

The invention discloses a magnetic aluminum nitride thin film material of a sphalerite structure and a preparation method and an application. In Sc-doped aluminum nitride, the crystal structure of the Sc-doped aluminum nitride is the sphalerite structure, and Sc elements occupy the position of part of Al elements in crystal lattice. The molar ratio of Sc to Al is 76:24. The molar ratio of the Al elements and the Sc elements to nitrogen elements is 1:1. The material prepared through the method is a diluted magnetic spin semiconductor material with sphalerite, the Curie temperature of the material of the sphalerite structure is high, the room temperature stability is good, and the spin injection efficiency is high; the crystal structure of reported diluted magnetic semiconductor GaN belongs to a hexagonal crystal system, the magnetism is weak and close to the super paramagnetic properties, and therefore application prospects are broad.

Description

technical field [0001] The invention belongs to the field of new materials, and relates to a magnetic aluminum nitride film material with a sphalerite structure, a preparation method and an application. Background technique [0002] At present, dilute magnetic semiconductors are research hotspots in the fields of electronic information and new materials. Everyone is looking for dilute magnetic semiconductors with high Curie temperature, good room temperature stability, and high spin injection efficiency. However, in the dilute magnetic semiconductors that have been discovered, the GaAs system has a sphalerite structure, which belongs to the cubic crystal system, and has high spin injection efficiency, but has weak magnetism and low Curie temperature; oxides represented by zinc oxide, although they have room temperature Ferromagnetism, but the magnetic behavior is close to superparamagnetic characteristics, and effective spin injection cannot be performed. The important reaso...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35C23C14/28C01B21/072H01F10/18
Inventor 曾飞刘宏燕王光月潘峰
Owner TSINGHUA UNIV
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