Method for treatment of recessed structures in dielectric materials for smear removal

A technology of dielectric material and recessed structure, applied in the directions of cleaning methods and utensils, chemical instruments and methods, metal material coating processes, etc., to achieve the effect of reducing the number and high adhesion

Active Publication Date: 2016-05-11
ATOTECH DEUT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is not suitable for removing pore contamination from dielectric materials (Example 2 (comparative)).

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example

[0057] The invention will now be illustrated with reference to the following non-limiting examples.

[0058] General procedure:

[0059] Two different types of test substrates were used throughout the examples:

[0060] Specimen type 1 consisted only of bare dielectric material (Matsushita MC100EX: epoxy with glass reinforcement but no copper cladding) and was used to study the application of the sample for removal by as indicated in the examples. The "weight loss" following a particular method of smear is used to determine the desired smear removal from the dielectric material.

[0061] Test piece type 2 consisted of the same dielectric material as substrate material 1, but further included copper layers on both sides.

[0062] Both specimen types have a 5×5cm 2 size of.

[0063] The ability of the different acidic solutions to remove pore fouling was determined by weighing the dried specimen type 1 on an analytical balance before and after contact with the various acid...

example 1

[0068] Example 1 (comparison)

[0069] Make specimen type 1 and specimen type 2 with concentrated H 2 SO 4 (97wt% H in water 2 SO 4 ) and 0.25 mol / l (5.7 wt%) of ammonium peroxodisulfate in an acidic aqueous solution (according to the example of EP0216513A2).

[0070] For the first test, the temperature of the treatment solution was adjusted to 30° C. and the treatment time was 3 minutes. The weight loss of specimen type 1 after treatment with the solution was 708.8 mg / dm 2 . Accordingly, excess dielectric material is removed by this treatment solution.

[0071] The copper etching rate was 0.031 μm / min.

[0072] For the second test, the temperature of the treatment solution was adjusted to 35°C and the treatment time was 15 minutes. The weight loss of the specimen treated with the solution is 2315mg / dm 2 . Also, excess dielectric material is removed from the substrate by this process.

[0073] The copper etch rate as determined for coupon type 2 was 0.12 μm / min. Th...

example 2

[0075] Example 2 (comparison)

[0076] Test piece type 1 and test piece type 2 were brought into contact with a 200 g / l aqueous ammonium peroxodisulfate solution (according to the example of US 4,023,998). The temperature of the treatment solution was adjusted to 25° C. and the treatment time was 1.5 minutes.

[0077] Gain weight gain instead of weight loss. The weight gain of specimen type 1 after treatment with the solution was 10.3 mg / dm 2 . The weight gain indicates that the smear has not been removed from the dielectric material. It is assumed that the dielectric material swells during treatment with this treatment solution, which is then partly contained in the swollen dielectric material.

[0078] The copper etch rate as determined for coupon type 2 was 0.077 μm / min.

[0079] In addition, tests were performed with a treatment solution temperature of 35°C and a treatment time of 15 minutes.

[0080] Gain weight gain instead of weight loss. With the weight increa...

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PUM

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Abstract

The present invention relates to a method for treatment of recessed structures in a dielectric material for smear removal during the manufacture of printed circuit boards, IC substrates and the like. The dielectric material is contacted with an aqueous solution comprising 60 to 80 wt.-% sulfuric acid and 0.04 to 0.66 mol / l peroxodisulfate ions and at least one stabilizing additive selected from alcohols, molecular ethers and polymeric ethers. Smear is removed from the recessed structures by the method according to the present invention without penetration of process chemicals into the dielectric material and a sufficiently low copper etching rate is achieved. Furthermore, the shelf life of said aqueous solution is improved even in the presence of copper ions.

Description

technical field [0001] This invention relates to treatments for removing smear from recessed structures in dielectric materials in the manufacture of printed circuit boards, IC substrates and the like. Background technique [0002] Recessed structures such as through holes (TH) and blind microvias (BMVs) need to be formed in a dielectric material and later plated with copper to provide electrical contact between individual layers of multilayer printed circuit boards, IC substrates, and related devices . The recessed structure is formed, for example, by mechanical drilling, laser drilling or plasma erosion. Pore ​​contamination (residue from dielectric material) generated during formation of the recessed structure needs to be removed from the dielectric material, copper structure and / or copper layer, followed by activation of the dielectric walls of the recessed structure for continuous conformal copper plating Or fill copper by electroplating. Unremoved smears lead to ins...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/24C23C18/54H05K3/00C23G1/10
CPCC23C18/24C23G1/103H05K3/0055H05K2203/0789C23C18/2086C23C18/30C23C18/40C23C18/405B08B9/027C11D7/08C11D7/10C11D7/263
Inventor E·斯坦豪瑟S·威斯L·J·格雷戈瑞德斯J·席曼L·施坦普
Owner ATOTECH DEUT GMBH
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