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Method for directly depositing diamond film on graphite substrate

A technology of diamond film and graphite substrate, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of difficult to obtain high-quality diamond film, achieve stable bonding, good film bonding force, and high quality high effect

Inactive Publication Date: 2016-06-01
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem of directly growing diamond on a graphite substrate is that during chemical vapor deposition of diamond, graphite also grows at the same time, and a large amount of atomic hydrogen is required to etch graphite. When graphite is used as a substrate, more graphite phases need to be etched, making it difficult to Obtain high-quality diamond films

Method used

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  • Method for directly depositing diamond film on graphite substrate
  • Method for directly depositing diamond film on graphite substrate
  • Method for directly depositing diamond film on graphite substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0020] (1) Grind the graphite sample with 1000-mesh metallographic sandpaper, put the polished graphite sample in acetone for ultrasonic vibration cleaning for 10 minutes, take out the sample and put it in alcohol for ultrasonic vibration cleaning for 10 minutes, take out the sample and put it in deionized water for ultrasonic vibration cleaning After 10 minutes, take it out and put it into the drying oven to dry.

[0021] (2) Put the cleaned graphite sample into the reactor, vacuumize the reaction chamber to reach the background true 1×10 -3 Above Pa. Afterwards, 100 sccm of hydrogen gas was introduced to adjust the internal air pressure during the reaction so that the air pressure in the reaction chamber reached 6kPa. The filament is heated to 2000°C, the substrate temperature is controlled at 800°C, and the thermally decomposed atomic hydrogen etches the surface of the graphite substrate for 20 minutes.

[0022] (3) Maintain the temperature of the filament at 2000°C, cont...

Embodiment 2

[0025] (1) Grind the graphite sample with 1000-mesh metallographic sandpaper, put the polished graphite sample in acetone for ultrasonic vibration cleaning for 10 minutes, take out the sample and put it in alcohol for ultrasonic vibration cleaning for 10 minutes, take out the sample and put it in deionized water for ultrasonic vibration cleaning After 10 minutes, take it out and put it into the drying oven to dry.

[0026] (2) Put the cleaned graphite sample into the reactor, vacuumize the reaction chamber to reach the background true 1×10 -3 Above Pa. Afterwards, 100 sccm of hydrogen gas was introduced, and the air pressure in the reaction chamber was adjusted so that the air pressure in the reaction chamber reached 6 kPa. The filament is heated to 2000°C, the substrate temperature is controlled at 800°C, and the thermally decomposed atomic hydrogen etches the surface of the graphite substrate for 20 minutes.

[0027] (3) Keep the temperature of the filament at 2000° C., co...

Embodiment 3

[0030] (1) Grind the graphite sample with 1000-mesh metallographic sandpaper, put the polished graphite sample in acetone for ultrasonic vibration cleaning for 20 minutes, take out the sample and put it in alcohol for ultrasonic vibration cleaning for 20 minutes, take out the sample and put it in deionized water for ultrasonic vibration cleaning After 20 minutes, take it out and put it into the drying oven to dry.

[0031] (2) Put the cleaned graphite sample into the reactor, vacuumize the reaction chamber to reach the background true 1×10 -3 Above Pa. Afterwards, 150 sccm of hydrogen gas was introduced to adjust the air pressure in the reaction chamber so that the air pressure in the reaction chamber reached 10 kPa. The filament is heated to 1800°C, the substrate temperature is controlled at 750°C, and the thermally decomposed atomic hydrogen etches the surface of the graphite substrate for 40 minutes.

[0032] (3) Keep the temperature of the filament at 1800° C., control t...

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Abstract

The invention relates to the field of preparation of advanced materials, and provides a method for directly depositing a diamond film on a graphite substrate. The method is a CVD method for directly depositing the high-quality diamond film on the graphite substrate. Graphite evaporation is prevented, graphite electrodes can be applied to the electrochemistry, and the mechanical property of graphite is improved. According to the method, the graphite substrate does not need to be subjected to complex pretreatment, and other element transition layers do not need to be deposited. Only experiment parameters need to be changed in an experiment, the experiment parameters facilitating graphite deposition is changed to parameters facilitating diamond deposition, the diamond film and the substrate are well combined, and the deposition quality is high.

Description

technical field [0001] The invention belongs to the field of preparation of advanced materials. The diamond thin film is directly deposited on the graphite substrate without preparing a transition layer or pre-treating the graphite by utilizing the regulation and control of process parameters. Background technique [0002] Graphite is an essential material in industrial production. It has good chemical stability and can be used as a refractory material. It can be manufactured into heat exchangers, reaction tanks, heaters, combustion towers, etc. In growth, graphite is used as a crucible; it can be used as a conductive material and as an electrode in electrochemistry. However, whether graphite materials are used as crucibles or electrodes, there are some disadvantages. [0003] In the preparation of single crystal silicon, graphite can withstand high temperature, easy to process, and low in price. But the service life of graphite crucible is very short. On the one hand, th...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/455
CPCC23C16/271C23C16/455
Inventor 黄昊王蕾吴爱民张贵锋
Owner DALIAN UNIV OF TECH
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