Raman enhanced base for amplifying raman signal, and preparation method and application thereof

A Raman signal and substrate technology, which is applied in Raman scattering, measuring devices, instruments, etc., can solve the problem that metal nanoparticles and graphene cannot be tightly combined, the process of graphene composite substrate is complicated, and graphene is difficult to prepare mixed substrates and other problems, to achieve the effect of tight combination, lower temperature and anti-oxidation

Active Publication Date: 2016-06-08
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(1) The growth temperature of graphene is as high as 1000 °C, and the energy consumption is serious (2) Since the growth temperature of graphene is higher than the melting point of metal nanoparticles, it is difficult to prepare h

Method used

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  • Raman enhanced base for amplifying raman signal, and preparation method and application thereof
  • Raman enhanced base for amplifying raman signal, and preparation method and application thereof
  • Raman enhanced base for amplifying raman signal, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] Example 1

[0028] 1. Use the ultrasonic cleaning method to clean the polished quartz substrate. The cleaning process is 5 to 10 minutes each with alcohol, acetone and deionized water.

[0029] 2. The silver film with a thickness of 30-40nm is vapor-deposited on the quartz substrate by thermal evaporation, the evaporation environment is a low-pressure environment, and the pressure is less than 10 -3 Pa.

[0030] 3. Put the silver-plated quartz plate into a tube furnace for annealing treatment. The annealing temperature is 500-600℃, the annealing time is 25-35 minutes, the annealing environment is low-pressure argon, and the argon flow rate is 50- 60sccm, the pressure is less than 10 -2 Pa, the pressure is controlled by the instrument pump. After the annealing is completed, open the furnace cover to quickly bring the quartz plate to room temperature, and take out the quartz plate after cooling.

[0031] 4. Prepare an ammonium tetrathiomolybdate solution with a concentration of 0...

Example Embodiment

[0038] Example 2

[0039] 1. Use the ultrasonic cleaning method to clean the polished quartz substrate. The cleaning process is 5 to 10 minutes each with alcohol, acetone and deionized water.

[0040] 2. The silver film with a thickness of 30-40nm is vapor-deposited on the quartz substrate by thermal evaporation, the evaporation environment is a low-pressure environment, and the pressure is less than 10 -3 Pa.

[0041] 3. Put the silver-plated quartz plate into a tube furnace for annealing treatment. The annealing temperature is 500-600℃, the annealing time is 25-35 minutes, the annealing environment is low-pressure argon, and the argon flow rate is 50- 60sccm, the pressure is less than 10 -2 Pa, the pressure is controlled by the instrument pump. After the annealing is completed, open the furnace cover to quickly bring the quartz plate to room temperature, and take out the quartz plate after cooling.

[0042] 4. Prepare an ammonium tetrathiomolybdate solution with a concentration of 0...

Example Embodiment

[0045] Example 3

[0046] 1. Use the ultrasonic cleaning method to clean the polished quartz substrate. The cleaning process is 5 to 10 minutes each with alcohol, acetone and deionized water.

[0047] 2. The silver film with a thickness of 30-40nm is vapor-deposited on the quartz substrate by thermal evaporation, the evaporation environment is a low-pressure environment, and the pressure is less than 10 -3 Pa.

[0048] 3. Put the silver-plated quartz plate into a tube furnace for annealing treatment. The annealing temperature is 500-600℃, the annealing time is 25-35 minutes, the annealing environment is low-pressure argon, and the argon flow rate is 50- 60sccm, the pressure is less than 10 -2 Pa, the pressure is controlled by the instrument pump. After the annealing is completed, open the furnace cover to quickly bring the quartz plate to room temperature, and take out the quartz plate after cooling.

[0049] 4. Prepare an ammonium tetrathiomolybdate solution with a concentration of 0...

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Abstract

The invention relates to a raman enhanced base for amplifying a raman signal. A layer of MoS2 film is coated on the outer side of a substrate plated with an Ag film. A preparation method comprises the following steps: evaporating a layer of Ag film on an SERS substrate; annealing; coating an ammonium tetrathiomolybdate solution on the Ag film; performing thermal decomposition and cooling, thereby acquiring the raman enhanced base. According to the method provided by the invention, the technique is simple; the raman enhanced base can be prepared in batches; the cost can be saved while excellent raman enhanced effect can be acquired; and the practical application and popularization of the SERS substrate can be greatly promoted.

Description

technical field [0001] The invention belongs to the field of Raman detection, and relates to a Raman enhanced substrate for amplifying Raman signals, a preparation method and application thereof. Background technique [0002] Surface-enhanced Raman spectroscopy has attracted widespread attention since its inception because it can achieve specific single-molecule measurement, and has now been used in many fields such as biology, medicine, food safety, and environmental monitoring. The mechanism of Raman enhancement is divided into physical enhancement and chemical enhancement. The physical enhancement is mainly caused by the electric field enhancement caused by surface plasmon resonance, such as gold, silver and copper with a certain shape; the chemical enhancement is mainly due to the charge between the substrate and the molecule. Caused by exchange, such as graphene, molybdenum disulfide, etc. Realizing the combination of the two enhancements is a major direction of curren...

Claims

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Application Information

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IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 姜守振陈沛玺李振霍燕燕仇恒伟张超杨诚
Owner SHANDONG NORMAL UNIV
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