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Preparation method of polyimide RRAM (Resistance Random Access Memory)

A technology of resistive variable memory and polyimide, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor solubility and insoluble organic solvents, and achieve good stability and good film formation The effect of sex, technology and simplicity

Inactive Publication Date: 2016-06-22
GUILIN UNIV OF ELECTRONIC TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the special molecular structure of polyimide, its solubility is extremely poor, and it is almost insoluble in common organic solvents, making polyimide encounter many insurmountable difficulties in the preparation of memory devices.

Method used

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  • Preparation method of polyimide RRAM (Resistance Random Access Memory)
  • Preparation method of polyimide RRAM (Resistance Random Access Memory)
  • Preparation method of polyimide RRAM (Resistance Random Access Memory)

Examples

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Embodiment 1

[0028] A polyimide resistive variable memory, which is composed of a substrate 1, a bottom electrode 2, a polyimide functional layer 3 and a top electrode 4 from bottom to top, and the polyimide functional layer 3 is formed by coating on the bottom electrode 2 Polyamic acid is prepared by imidization.

[0029] The preparation method of the polyimide resistive variable memory comprises the following steps:

[0030] (1) Ultrasonic clean the indium tin oxide glass sheet with deionized water, acetone and absolute ethanol for 15 minutes, and dry it for later use;

[0031] (2) in N 2 Prepare the polyamic acid solution in the atmosphere, weigh the monomer 4,4'-diaminodiphenyl ether (ODA) and biphenyltetracarboxylic dianhydride (BPDA) in a molar ratio of 1:1.03, dissolve ODA in N, N'-dimethylacetamide (DMAc), slowly add BPDA to the above solution at 40°C, and continue stirring for 2 hours after all the addition is completed, to obtain a polyamic acid solution;

[0032] (3) Dilute t...

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Abstract

The invention discloses a preparation method of a polyimide RRAM (Resistance Random Access Memory). The memory is composed of a base, a bottom electrode, a polyimide functional layer and a top electrode. The preparation method comprises the steps of carrying out condensation polymerization for diamine and anhydride both used for synthesis of polyimide in an amide solvent according to a ratio of 1:1-1.03 to obtain a polyimide solution; coating the polyimide on indium-tin oxide glass by utilizing a spin-coating way so as to obtain a polyimide film; then enabling the polyimide film to be subjected to imidization so as to form the polyimide functional layer; and preparing the top electrode on the polyimide functional layer to obtain the polyimide RRAM. The memory shows a typical electrical bistable state property and has good electricity storage performance; the switching ratio is greater than 105; and the leaping voltage is about 2V.

Description

technical field [0001] The invention relates to the field of organic resistive memory, in particular to a method for preparing an organic resistive memory in which polyimide is used as a storage function layer. technical background [0002] The 21st century is an era of knowledge economy with the rapid development of the information industry as the core. With the gradual expansion of Internet coverage and the continuous development of information multimedia, the amount of data that needs to be processed and stored is increasing day by day, the information collection and management system is becoming more and more complex, the requirements for information storage and transmission are more stringent, and the explosive growth of information And the continuous miniaturization of electronic devices puts forward higher requirements for the development of information materials. In several important links of information technology (reading, transmission, storage, processing, displa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H10K99/00
CPCH10K71/12H10K71/40H10K85/10
Inventor 戴培邦阳林英范丽丽罗韦春卢悦群
Owner GUILIN UNIV OF ELECTRONIC TECH
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