Epitaxial growth method for increasing p-type doping concentration of nitride light-emitting diodes

Abstract

An epitaxial growth method for improving P-type doping concentration of a nitride light emitting diode relates to the technical field of nitride epitaxy. A buffer layer, an N-type layer, a light emitting active layer, an electron blocking layer, a P-type layer and a contact layer are sequentially grown on a substrate, the epitaxial growth method is characterized in that the P-type layer is formed through layered growth by controlling the flow of trimethyl indium under the atmosphere of N2 and ammonia gas, the hole concentration of a P-Al<X>Ga<1-X>N material layer can be obviously improved, the square resistance can be obviously reduced, and the light emitting diode (LED) photoelectric property based on the material layer can be obviously improved.

Description

technical field [0001] The invention relates to the technical field of nitride epitaxy, and in particular provides an epitaxial growth method capable of significantly increasing the P-type doping concentration of a nitride light-emitting diode (LED). Background technique [0002] Group III nitride materials have received extensive attention in recent years due to their broad application prospects in optoelectronics and microelectronics. Especially in the field of optoelectronics, it has been widely used to make light-emitting diodes (LEDs). With its unique advantages such as small size, long life, energy saving and environmental protection, LED plays an important role in the fields of visible light and invisible light. However with Al X Ga 1-X The P-type doping technology of nitride light-emitting materials dominated by N (1≥X≥0) has been difficult to break through, and the P-type nitride light-emitting materials with high hole concentration have been difficult to obtain,...

AI Technical Summary

Problems solved by technology

However, due to the low solubility of acceptor dopants, the self-compensation effect caused by defects and the Al X Ga 1-X The high Mg acceptor activation energy in N materials makes P-Al with high hole concentration X Ga 1-X N materials have been difficult to obtain

By optimizing the epitaxial growth temperature, pressure, and rate, the hole concentration can be increased to a certain extent. In addition, the technology of energy band modulation through the growth material superlattice structure can also increase the hole concentration to a certain extent, but the existing Doping technology, it is still difficult to achieve a higher hole concentration

[0004] Currently P-Al X Ga 1-X The growth of N generally adopts uniform Mg doping technology, that is, simultaneously injecting TMGa / TMAl / NH into the reaction chamber 3 / Cp 2 Mg conducts the entire P-Al X Ga 1-X The growth of N layer, this growth process is difficult to obtain P-Al with high hole concentration X Ga 1-X The N layer restricts the improvement of the optoelectronic performance of the device

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