Silicon substrate nitride ultraviolet LED chip structure and implementation method therefor

Abstract

The invention provides a silicon substrate nitride ultraviolet LED chip structure and an implementation method therefor. The preparation method for the LED chip comprises the steps of preparing an epitaxial structure, wherein the epitaxial structure comprises a growth substrate and a stress control layer; performing surface treatment on the epitaxial structure; depositing a reflective layer on the epitaxial structure and performing patterning treatment on the reflective layer; depositing a bonding layer on the patterned reflective layer; enabling the epitaxial structure after the bonding layer is deposited to be bonded with a supporting substrate through a bonding technology; removing the growth substrate and the stress control layer; roughening the stress control layer to form a roughened layer; and manufacturing grids used for electric conduction and a negative electrode bonding pad on the surface of the roughened layer to finish the preparation of the silicon substrate nitride ultraviolet LED chip structure. The ultraviolet LED epitaxial structure is growing on the high-thermal-conductivity silicon substrate, and the silicon substrate ultraviolet LED perpendicular structured chip is prepared, so that the LED chip structure has the advantages of high thermal dissipation, high chip yield and low cost.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to an LED chip structure and a realization method thereof. Background technique [0002] Compared with traditional ultraviolet mercury lamps, nitride ultraviolet LEDs (Light Emitting Diodes, light emitting diodes) have many advantages such as energy saving, environmental protection, long life, and good compactness. It has broad application prospects. [0003] Existing UV LEDs are generally UV LED products based on sapphire substrates. Due to the insulating properties of the sapphire substrate itself and poor thermal conductivity, the existing LED products have the following disadvantages: (1) the UV LED chip based on the horizontal structure of the sapphire substrate does not dissipate heat well, and the GaN (nitrided) in the epitaxial layer Gallium) easily absorbs the ultraviolet light in the active area, and is only suitable for small-sized low-power chips, and is no...

AI Technical Summary

Problems solved by technology

Due to the insulating properties of the sapphire substrate itself and poor thermal conductivity, the existing LED products have the following disadvantages: (1) the UV LED chip based on the horizontal structure of the sapphire substrate does not dissipate heat well, and the GaN (nitrided) in the epitaxial layer Gallium) easily absorbs the ultraviolet light in the active area, and is only suitable for small-sized low-power chips, and is not suitable for use under high-power conditions, such as photocuring; (2) In the preparation process of vertical structure ultraviolet LED chips based on sapphire substrate The laser lift-off process is used to remove the sapphire substrate, the process yield is low, the cost is high, and it also has the disadvantage of poor heat dissipation

[0004] In order to overcome the shortcomings of sapphire substrate UV LEDs, it has also been proposed to use AlN (aluminum nitride) substrates with high thermal conductivity to prepare UV LEDs, but AlN substrates are too expensive to be commercialized at present.

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