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Octahedral metal oxide composite material and preparation and application thereof

A composite material and octahedral technology, which is applied in the field of metal oxide composite materials and their preparation and application, can solve the problems of low yield, complicated operation and high cost, and achieve the effects of high yield, simple operation and low cost.

Inactive Publication Date: 2016-07-06
WUHAN INSTITUTE OF TECHNOLOGY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the synthetic methods are complex in operation, high in cost and low in yield.

Method used

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  • Octahedral metal oxide composite material and preparation and application thereof
  • Octahedral metal oxide composite material and preparation and application thereof
  • Octahedral metal oxide composite material and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Preparation of Zn 2 SnO 4 / SnO 2 Octahedron, the size of the prepared octahedron is about 1.25 μm, and the reaction temperature is 20°C, which specifically includes the following steps:

[0032] 12.5mL, 0.5mol / LZnAc 2 2H 2 The mixed aqueous solution of O and 0.5mol / L citric acid was vigorously stirred at room temperature, and 12.5mL, 0.5mol / LSnCl 4 ·5H 2 O aqueous solution, 25mL, 3.75mol / L NaOH solution, maintain the reaction temperature at 20°C, and stir vigorously for 5h. Immediately after the reaction, centrifugal separation was carried out, and then centrifugal washing was carried out with deionized water and ethanol, and the obtained precipitate was dried in a drying oven at 80°C for 24 hours to obtain ZnSn(OH) 6 octahedron.

[0033] Then put the obtained white solid powder in the crucible, then heat up from room temperature to 600 °C in the temperature-programmed muffle furnace at a rate of 2 °C / min, keep it at a constant temperature for 2 hours, and take i...

Embodiment 2

[0037] Preparation of Zn 2 SnO 4 / SnO 2 Octahedron, the size of the prepared octahedron is about 3 μm, and the reaction temperature is 40°C, which specifically includes the following steps:

[0038] 12.5mL, 0.5mol / LZnAc 2 2H 2 The mixed aqueous solution of O and 0.5mol / L citric acid was vigorously stirred at room temperature, and 12.5mL, 0.5mol / LSnCl 4 ·5H 2 O aqueous solution, 25mL, 3.75mol / L NaOH solution, maintain the reaction temperature at 40°C, and stir vigorously for 5h. Immediately after the reaction was completed, it was collected by centrifugation, and then washed with deionized water and ethanol, and the obtained precipitate was dried in a drying oven at 80°C for 24 hours to obtain ZnSn(OH) 6 octahedron. For the shape and size of the product, see Figure 4 (40°C), after measurement, the single side length of the product is about 3 μm. Then put the obtained white solid powder in the crucible, then heat up from room temperature to 600 °C in the temperature-pr...

Embodiment 3

[0041] Preparation of Zn 2 SnO 4 / SnO 2 Octahedron, the size of the prepared octahedron is about 4 μm, and the reaction temperature is 60°C, which specifically includes the following steps:

[0042] 12.5mL, 0.5mol / LZnAc 2 2H 2 The mixed aqueous solution of O and 0.5mol / L citric acid was vigorously stirred at room temperature, and 12.5mL, 0.5mol / LSnCl 4 ·5H 2 O aqueous solution, 25mL, 3.75mol / L NaOH solution, maintain the reaction temperature at 60°C, and stir vigorously for 5h. Immediately after the reaction was completed, it was collected by centrifugation, and then washed with deionized water and ethanol, and the obtained precipitate was dried in a drying oven at 80°C for 24 hours to obtain ZnSn(OH) 6 octahedron. For the shape and size of the product, see Figure 4 (60°C), after measurement, the single side length of the product is about 4 μm. Then put the obtained white solid powder in the crucible, then heat up from room temperature to 600 °C in the temperature-pr...

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Abstract

The invention discloses an octahedral metal oxide composite material and preparation and application thereof. The octahedral metal oxide composite material is formed by roasting a ZnSn(OH)6 octahedron of 1-6 micrometers and composed of a Zn2SnO4 / SnO2 octahedron. The preparation method comprises the steps that, a mixed aqueous solution of zinc salt and citric acid is added to an aqueous solution of tin tetrachloride, stirring and mixing are conducted to be uniform, a NaOH solution with appropriate concentration is added, a vigorous stirring reaction is conducted for 4-6 h at 10-90 DEG C, centrifugating, washing and drying are conducted, and the ZnSn(OH)6 octahedron with the size ranging from 1 micrometer to 6 micrometers is obtained; the octahedron is put in an air atmosphere at the temperature of 550-750 DEG C, roasting treatment is conducted for 2-6 h, and white solid powder is obtained. According to the octahedral metal oxide composite material and preparation and application thereof, the ZnSn(OH)6 octahedron material is prepared through a coprecipitation method, the reaction condition is mild, operation is easy, the cost is low, environmental friendliness is achieved, the obtained product is uniform in size, dispersion is good, the yield is high, and excellent selectivity on VOCs gases of methanal and the like is achieved.

Description

technical field [0001] The invention belongs to the field of inorganic materials, and in particular relates to a metal oxide composite material and its preparation and application. Background technique [0002] Metal oxide semiconductor materials are used in the preparation of gas sensors for the detection of flammable, explosive, toxic, and environmentally harmful gases. At present, common metal oxide semiconductor materials are divided into N-type semiconductor metal oxides and P-type metal oxides, among which SnO 2 And ZnO is the most widely used N-type semiconductor gas-sensing material. Simple metal oxide semiconductors used in gas sensing materials often have some problems such as poor selectivity and low sensitivity. However, N-N type, N-P type, and P-P type compounding of metal oxide semiconductor materials effectively solves the problem of simple metal oxide semiconductor materials. The defect of poor selectivity in the gas sensing field. Different compounding me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/407
CPCG01N27/4075
Inventor 刘善堂舒绍明郑第周发武
Owner WUHAN INSTITUTE OF TECHNOLOGY
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