Fabrication method of oxide semiconductor thin film transistor
A technology of oxide semiconductor and thin film transistor, which is used in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of difficult realization of low-temperature processes, high temperature resistance, and inapplicability, and achieves good suppression ability and guarantees consistency. , the effect of improving reliability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0019] A method for preparing an oxide semiconductor thin film transistor, the oxide semiconductor thin film transistor comprising a substrate, a gate dielectric layer, a channel layer, a source electrode and a drain electrode, the preparation method comprising the following steps:
[0020] (1) Substrate cleaning: Soak the silicon substrate in 18% hydrogen fluoride aqueous solution for 1 min, then rinse with deionized water, add water, hydrogen oxide and ammonia water after rinsing, cook for 10 min, control the temperature at 75 ° C, use After rinsing with deionized water, add it to the mixed solution of water, hydrogen peroxide and hydrochloric acid, cook for 10 minutes, control the temperature at 75°C, rinse with deionized water, and then blow dry with nitrogen;
[0021] (2) Gate dielectric layer preparation: raise the temperature of the nitriding furnace to 1300°C, and then pass nitrogen gas to remove impurities. The time of removing impurities is 15 minutes, and then flow p...
Embodiment 2
[0025] A method for preparing an oxide semiconductor thin film transistor, the oxide semiconductor thin film transistor comprising a substrate, a gate dielectric layer, a channel layer, a source electrode and a drain electrode, the preparation method comprising the following steps:
[0026] (1) Substrate cleaning: Soak the silicon substrate in 20% hydrogen fluoride aqueous solution for 1.5 minutes, then rinse it with deionized water. After rinsing with deionized water, add it to the mixed solution of water, hydrogen peroxide and hydrochloric acid, cook for 12 minutes, control the temperature at 80°C, rinse with deionized water and then blow dry with nitrogen;
[0027] (2) Gate dielectric layer preparation: raise the temperature of the nitriding furnace to 1350°C, and then pass nitrogen gas to remove impurities. The time of removing impurities is 18 minutes, and then pass pure nitrogen gas, and then push the substrate obtained in step (1) into the nitriding furnace, and nitridin...
Embodiment 3
[0031] A method for preparing an oxide semiconductor thin film transistor, the oxide semiconductor thin film transistor comprising a substrate, a gate dielectric layer, a channel layer, a source electrode and a drain electrode, the preparation method comprising the following steps:
[0032] (1) Substrate cleaning: Soak the silicon substrate in 25% hydrogen fluoride aqueous solution for 2 minutes, then rinse it with deionized water. After rinsing with deionized water, add it to the mixed solution of water, hydrogen peroxide and hydrochloric acid, cook for 15 minutes, control the temperature at 85°C, rinse with deionized water and then blow dry with nitrogen;
[0033] (2) Gate dielectric layer preparation: raise the temperature of the nitriding furnace to 1400°C, and then pass nitrogen gas to remove impurities. The time of removing impurities is 20 minutes, and then pass pure nitrogen gas, and then push the substrate obtained in step (1) into the nitriding furnace for nitriding ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More