Nanometer annular cavity SERS substrate based on surface plasmon effect and manufacturing method thereof

A technology of surface plasmon and ring cavity, which is applied in the field of elemental spectrum analysis of plasmon effect, can solve the problems of complex structure and difficult processing of SERS substrate, and achieve good detection effect, good mechanical performance and simple structure

Inactive Publication Date: 2016-08-10
NANJING UNIV OF INFORMATION SCI & TECH
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a nano-annular cavity SERS substrate based on the surface plasm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanometer annular cavity SERS substrate based on surface plasmon effect and manufacturing method thereof
  • Nanometer annular cavity SERS substrate based on surface plasmon effect and manufacturing method thereof
  • Nanometer annular cavity SERS substrate based on surface plasmon effect and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] The steps of preparing the annular cavity SERS substrate are described in detail in conjunction with specific embodiments as follows:

[0060] a) Take a 2.5-inch silicon wafer, wash it with acetone (purity 99.7%), alcohol (purity 99.9%), deionized water (resistivity 18.2MΩ) ultrasonic (40W) for 10 minutes, and then use nitrogen gas (purity 99.7%) Blow dry; then process the silicon wafer with a plasma cleaner for 5 minutes;

[0061] b) Place the treated silicon wafer substrate on the tray of the homogenizer, and set the speed at 3000 rpm;

[0062] c) Configure SiO 2 Precursor solution of SiO 2 The mass of each substance in the precursor solution is: TEOS (98wt%)=1g, 0.1M / L HCl=1g, EtOH (100%)=1.5g, mix and stir for one hour for later use;

[0063] d) 20ml of colloidal microsphere solution configured with polystyrene (PS) microspheres, wherein the diameter of PS microspheres is 690nm, the diameter deviation rate is 0.2%, the volume percentage concentration is 0.05%, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a nanometer annular cavity SERS substrate based on a surface plasmon effect. The nanometer annular cavity SERS substrate comprises a substrate, wherein a nanoscale single layer PS microsphere array is arranged on the substrate; the PS microsphere array is filled with a gel layer formed by SiO2 or TiO2 precursor solution; the thickness of the gel layer is smaller than the diameter of microspheres; a nanoscale annular concave cavity is formed between the top of the PS microspheres and the gel layer; a metal layer is coated on the surface layer of the substrate; a metal annular cavity array is formed in the annular concave cavity coated with the metal layer. A to-be-detected sample is filled in the annular concave cavity, a cylindrical surface plasmon is formed in the metal annular cavity during illumination, intensive local electric field enhancement is formed, a Raman signal which can be detected is excited by the to-be-detected sample by virtue of the enhanced electric field, and the nanometer annular cavity SERS substrate is simple in structure and easy to process and prepare. The invention also discloses a method for manufacturing the SERS substrate. An annular cavity array is prepared on a planar substrate by adopting nanometer microspheres and a spin-coating method. The method is simple and easy for large-scale production.

Description

technical field [0001] The present invention relates to a nano-ring cavity SERS substrate based on the surface plasmon effect, and also relates to a method for manufacturing a nano-ring cavity SERS substrate based on the surface plasmon effect, which belongs to the element spectrum of the surface plasmon effect Analyze technical fields. Background technique [0002] In general, it is very convenient to use Raman spectroscopy to identify the composition of substances, but for many chemical substances, the signal cannot be detected directly through Raman spectroscopy. It is necessary to use Raman enhancement technology to improve the signal-to-noise ratio of Raman signals to detect substance to be tested. The surface-enhanced Raman scattering (SERS) effect refers to that in some specially prepared metal good conductor surfaces or sols, in the excitation region, due to the enhancement of the electromagnetic field on the surface or near the surface of the sample, the Raman scat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N21/65B82Y40/00
CPCB82Y40/00G01N21/658
Inventor 倪海彬常建华王婷婷刘清惓倪波葛益娴
Owner NANJING UNIV OF INFORMATION SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap