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γ-irradiation scintillator detector based on silicon carbide pin diode structure

A PIN diode and γ-irradiation technology, which is applied in the field of γ-ray scintillator detectors, can solve the problems of low detection efficiency of gamma-ray detectors, inability to meet low-dose ray detection, and small gamma-ray absorption coefficient. The effect of weakening the trap effect, improving the intrinsic energy resolution, and weakening the influence of electrical properties

Active Publication Date: 2017-06-13
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing process of the Schottky barrier structure detector is not suitable for integration on a single chip, and the detection range is small, which cannot meet the needs of low-dose radiation detection.
[0008] Simple pn junction silicon carbide gamma ray detector, the absorption coefficient of gamma ray is too small, thick epitaxy is required, which is difficult, and the detection efficiency of thin pn junction silicon carbide gamma ray detector is low

Method used

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  • γ-irradiation scintillator detector based on silicon carbide pin diode structure
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  • γ-irradiation scintillator detector based on silicon carbide pin diode structure

Examples

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Effect test

Embodiment 1

[0048] Example 1: Fabrication of a γ-irradiation detector with a cerium-doped lanthanum bromide scintillator with an embedded depth of 0.5 μm.

[0049] Step 1, choose a doping concentration of 1.0×10 20 cm -3 The N-type 4H-SiC substrate is used as the substrate 7. After cleaning, the low-pressure hot-wall chemical vapor deposition method LPCVD is used at an epitaxial temperature of 1570°C, a pressure of 100 mbar, and a growth gas of C3H8, SiH4 and H2. The thickness of epitaxial growth on the substrate is 1.0μm, and the doping concentration is 1.0×10 18 cm -3 The 4H-SiC N-type buffer layer 6, such as image 3 shown in a;

[0050] The second step is to use low-pressure hot-wall chemical weather deposition method LPCVD, under the conditions of epitaxial temperature of 1570℃, pressure of 100mbar, and growth gas of C3H8, SiH4 and H2, an epitaxial layer with a thickness of 1.5 on the N-type buffer layer 6 μm, doping concentration is 1.0×10 15 cm -3 The intrinsic absorption layer 5, such...

Embodiment 2

[0057] Example 2: Fabrication of a γ-irradiation detector with a cerium-doped lanthanum bromide scintillator with an embedded depth of 1.0 μm.

[0058] Step 1, epitaxial N-type buffer layer 6, such as image 3 shown in a;

[0059] Choose a doping concentration of 5.0×10 20 cm -3 The N-type 4H-SiC substrate is used as the substrate 7. After cleaning, the low-pressure hot-wall chemical vapor deposition method LPCVD is used to epitaxially grow on the substrate with a thickness of 1.5μm and a doping concentration of 5.0×10 18 cm -3 的4H-SiC N-type buffer layer 6;

[0060] The epitaxial process conditions: temperature is 1570℃, pressure is 100mbar, growth gas is C 3 H 8 , SiH 4 And H 2 ;

[0061] Step two, epitaxial intrinsic absorption layer 5, such as image 3 Shown in b.

[0062] Using low pressure hot wall chemical weather deposition method LPCVD, an epitaxial layer on the N-type buffer layer 6 with a thickness of 1.7μm and a doping concentration of 1.0×10 16 cm -3 The intrinsic absorpt...

Embodiment 3

[0076] Embodiment 3: Making a γ-irradiation detector with a cerium-doped lanthanum bromide scintillator with an embedded depth of 1.5 μm;

[0077] Step A, N-type buffer layer.

[0078] Choose a doping concentration of 1.0×10 21 cm -3 N-type 4H-SiC substrate as substrate 7 and cleaned;

[0079] Using low pressure hot wall chemical vapor deposition method LPCVD, under the conditions of epitaxial temperature of 1570℃, pressure of 100mbar, and growth gas of C3H8, SiH4 and H2, the thickness of epitaxial growth on the substrate is 2.0μm, and the doping concentration is 1.0× 10 19 cm -3 The 4H-SiC N-type buffer layer 6, such as image 3 shown in a.

[0080] Step B, intrinsic absorption layer.

[0081] Using low pressure hot wall chemical weather deposition method LPCVD, the epitaxial temperature is 1570℃, the pressure is 100mbar, and the growth gas is C 3 H 8 , SiH 4 And H 2 Under the conditions of the N-type buffer layer 6, an epitaxial layer with a thickness of 2.0μm and a doping concentra...

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Abstract

The invention discloses a gamma irradiation scintillator detector based on a silicon carbide PIN diode structure and a manufacturing method thereof, mainly solving the problems of low detection efficiency, unfavorability to integration and poor radiation resistance of prior art. The detector comprises from bottom to top an N-type ohm contact electrode (8), an N-type SiC substrate (7), an N-type buffer layer (6), and a doping concentration intrinsic absorption layer (5); the central area of the intrinsic absorption layer (5) is provided with a window, in which a lanthanum cerium bromide scintillator (1) is embedded; an SiO2 reflection layer (2) is deposited on a window internal area and the window; P+ thin layers (4) are arranged on two sides of the intrinsic absorption layer (5); P-type ohm contact electrodes (3) are arranged on the P+ thin layers (4). The gamma irradiation scintillator detector has the characteristics of high detection efficiency, favorability to integration and great radiation resistance, and can be applied to nuclear energy gamma ray detection.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a gamma-ray scintillator detector, which can be used in the field of gamma-ray ionizing radiation detection. Background technique [0002] The scintillator detector is currently one of the most widely used and most widely used ionizing radiation detectors. The scintillator material has the characteristics of high detection efficiency, short resolution time, convenient use, and wide applicability. Therefore, the application of scintillator detectors has exceeded that of gas detectors in some aspects, making the energy spectrum analysis of gamma rays possible. Compared with semiconductor detectors such as HPGe and Si(Li), the energy resolution of scintillator detectors is poor, which will affect the effect of γ-ray energy spectrum analysis. [0003] Traditional Si, GaAs and other materials have low thermal conductivity, low breakdown voltage, low power density, and po...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0232H01L31/117H01L31/18G01T1/20
CPCG01T1/2018H01L31/02161H01L31/02322H01L31/117H01L31/18Y02P70/50
Inventor 郭辉刘博睿张玉明陈小青张晨旭
Owner XIDIAN UNIV