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A kind of 2-2 type bifeo3-cufe2o4 composite film and preparation method thereof

A technology of bifeo3-cufe2o4 and composite film, applied in the field of 2-2 type BiFeO3-CuFe2O4 composite film and its preparation

Active Publication Date: 2019-07-30
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the advantages of the above two materials can be combined, a multiferroic thin film with excellent performance can be obtained, but there is no relevant report in this regard

Method used

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  • A kind of 2-2 type bifeo3-cufe2o4 composite film and preparation method thereof
  • A kind of 2-2 type bifeo3-cufe2o4 composite film and preparation method thereof
  • A kind of 2-2 type bifeo3-cufe2o4 composite film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Step 1, dissolve copper nitrate and iron nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, and then add acetic anhydride to obtain a stable CuFe with a Fe ion concentration of 0.1mol / L 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 4:1;

[0036] Step 2, dissolving bismuth nitrate and iron nitrate in a molar ratio of 1:1 in a solvent (5% excess bismuth nitrate) to obtain stable BiFeO with a total metal ion concentration of 0.3mol / L 3 Precursor solution; wherein the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0037] Step 3, place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the FTO / glass substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. Then put the FTO / ...

Embodiment 2

[0042] Step 1, dissolve copper nitrate and iron nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, and then add acetic anhydride to obtain a stable CuFe nitrate with a Fe ion concentration of 0.14mol / L. 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3.5:1;

[0043] Step 2, dissolving bismuth nitrate and iron nitrate in a molar ratio of 1:1 in a solvent (5% excess bismuth nitrate) to obtain stable BiFeO with a total metal ion concentration of 0.003mol / L 3 Precursor solution; wherein the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 2.5:1;

[0044] Step 3, place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the FTO / glass substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. T...

Embodiment 3

[0049] Step 1, dissolve copper nitrate and iron nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, and then add acetic anhydride to obtain a stable CuFe nitrate with a Fe ion concentration of 0.2mol / L. 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 4.5:1;

[0050] Step 2, dissolving bismuth nitrate and iron nitrate in a molar ratio of 1:1 in a solvent (5% excess bismuth nitrate) to obtain stable BiFeO with a total metal ion concentration of 0.05mol / L 3 Precursor solution; wherein the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3.5:1;

[0051] Step 3, place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the FTO / glass substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. The...

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Abstract

The invention provides a 2-2 type BiFeO3-CuFe2O4 composite film and a preparation method therefor. The preparation method comprises the steps: firstly, separately preparing a precursor solution of CuFe2O4 and a precursor solution of BiFeO3; and then, carrying out spin coating on a substrate so as to prepare multiple layers of CuFe2O4 films, and then, carrying out spin coating on the CuFe2O4 films so as to prepare multiple layers of BiFeO3 films, thereby obtaining the BiFeO3-CuFe2O4 composite film. According to the 2-2 type BiFeO3-CuFe2O4 composite film and the preparation method therefor, by adopting a sol-gel method, the prepared film is good in uniformity and accurate and controllable in chemical ingredient; the BiFeO3-CuFe2O4 composite film obtained through compounding the BiFeO3 films and ferromagnetic spinel-structured CuFe2O4 films has the saturation magnetization intensity Ms of 25.8emu / cm<3> and the remanent magnetization intensity Mr of 17.8emu / cm<3>; meanwhile, a dielectric loss frequency spectrum of the BiFeO3-CuFe2O4 composite film is in line with Maxwell-Wagner dielectric relaxation; and a leakage current of the film is subjected to resistance hysteresis under the condition of forward bias.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a 2-2 type BiFeO 3 -CuFe 2 o 4 Composite film and method for its preparation. Background technique [0002] As a typical single-phase multiferroic material, pure-phase bismuth ferrite (BiFeO 3 ) has a perovskite structure and is one of the few multiferroic materials that have both ferroelectricity and antiferromagnetism at room temperature. Its ferroelectric Curie temperature is 850°C and the antiferromagnetic Neel temperature is 370°C. BiFeO 3 Thin film, as a typical ferromagnetic material, has attracted more and more researchers' attention. Utilizing its high dielectric constant and magnetic permeability, it is possible to make electronic components integrating high capacitance and large inductance, which are used to reduce the number of devices on high-density circuit boards and solve the mutual interference between inductive and capacitive devices. question. Using i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/26
CPCC04B35/26C04B2235/3281C04B2235/3298
Inventor 谈国强杨玮晏霞耶维乐忠威夏傲任慧君
Owner SHAANXI UNIV OF SCI & TECH
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