Method for stably growing GaN crystal material at high rate in HVPE

A crystal material, high-speed technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of hindering GaN materials, hindering GaN crystal rate, GaN corrosion, etc., to achieve the effect of increasing growth rate

Active Publication Date: 2016-08-17
SINO NITRIDE SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This kind of HCl gas circulation path, on the one hand, as the HCl gas continues to flow in, the liquid level of the liquid metal Ga in the Ga boat continues to drop, and the time for the HCl gas to reach the Ga liquid level is prolonged, resulting in a decrease in the generated GaCl, and the growth zone V The /Ⅲ ratio changes, which ultimately affects the stability of GaN crystal growth [K.Lekhal et al.Jpn.J.Appl.Phys.,55,05FF03,2016.]
On the other hand, due to the existence of part of the HCl gas that has not contacted the metal Ga liquid surface, it is transported to the growth region before it can react, and the appearance of HCl gas in the growth region will make GaCl and NH 3 The

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  • Method for stably growing GaN crystal material at high rate in HVPE
  • Method for stably growing GaN crystal material at high rate in HVPE
  • Method for stably growing GaN crystal material at high rate in HVPE

Examples

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Example Embodiment

[0030] Example 1: As attached figure 2 As shown, in the horizontal HVPE system, an improved tortuous and extended HCl gas flow path is adopted to pass HCl gas 11 from the lower side of the Ga boat 22, and pass through the HCl gas inlet and Ga containing liquid Ga A tortuous and prolonged circulation path is provided between the liquid surface of the boat 22 and is partially separated but connected. In this way, the HCl gas 11 and the liquid metal Ga 3 have enough time to fully mix and completely react to form GaCl gas; the GaCl gas generated by the reaction escapes from the upper liquid surface of the liquid metal Ga 3 and is transported to the growth zone. Near seed crystal 4, and NH 3 12 The reaction produces GaN crystal material. Due to the tortuous and prolonged flow path, the contact area of ​​HCl gas 11 and liquid Ga 3 is increased and the reaction time is prolonged, so that GaCl gas 11 and liquid Ga 3 are fully contacted and completely reacted. There is almost no unrea...

Example Embodiment

[0032] Embodiment two: as attached image 3 As shown, in the horizontal HVPE system, using the improved flow path of the dispersed HCl gas of the present invention, the HCl gas 11 is uniformly introduced from the porous inlet at the bottom of the Ga boat 23. Since each inlet of HCl gas is small and scattered, the small flow of HCl gas 11 emerging from each HCl inlet upward is fully contacted with liquid Ga 3 and completely reacts to produce GaCl gas, so there is almost no unreacted The HCl gas 11 of the gas escapes from the liquid surface of the liquid Ga 3. After that, the GaCl gas generated by the reaction escapes from the upper liquid surface of the liquid Ga 3 and is transported to the vicinity of the seed crystal 4 in the reaction zone, and is combined with NH 3 12 The reaction produces GaN crystal material. Since there is no HCl gas near the seed crystal 4, the growth rate of the GaN crystal material is increased; and as the reaction continues, although the liquid level o...

Example Embodiment

[0034] Embodiment 3: As attached Figure 4 As shown, in the vertical HVPE system, the dispersed flow path in the second embodiment and the tortuous and extended flow path in the first embodiment are mixed and the HCl gas 11 is removed from the ring of liquid Ga on the Ga boat 24. During the tortuous and prolonged circulation path where the lower part is connected but the upper part is separated from each other, the HCl gas 11 and liquid Ga 3 are fully mixed and completely reacted to form GaCl gas. The liquid surface of the inner ring of the liquid Ga on the upper part of the Ga boat 24 escapes; in this embodiment, the HCl gas inlet is a completely dispersed annular inlet, and the HCl gas passed in is completely dispersed and penetrated. After a tortuous and prolonged flow path, it fully contacts the liquid Ga 3 and completely reacts to generate GaCl gas. Therefore, almost no unreacted HCl gas 11 escapes from the inner annular liquid surface of the liquid Ga 3. Finally, after t...

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Abstract

The invention discloses a method for stably growing a GaN crystal material at high rate in HVPE. The method comprises the following steps: when the HCl gas introduced into a Ga boat containing liquid Ga goes through an improved HCl gas circulation way, the HCl gas is sufficiently mixed with metal Ga for reacting to generate a GaCl gas; and after escaping from the top liquid level of the liquid Ga, the GaCl gas is guided into a growth zone and reacts with NH3 to generate GaN for growth. In the invention, since the HCl is prevented from directly entering the growth zone and approaching the seed crystal, the growth rate of the GaN crystal material is increased; and due to the increase of reaction time, the problems of GaCl concentration change in the growth zone and consequent decrease of the GaN growth rate caused by the Ga liquid level decrease can be improved so as to enhance the growth stability of GaN crystal.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for stably growing GaN crystal materials at a high rate in HVPE. Background technique [0002] The hydride vapor phase epitaxy (HVPE) method has become one of the mainstream GaN material growth methods due to its relatively simple equipment and relatively fast growth rate. Japan's Sumitomo and Hitachi Cable, China's Dongguan Sino Nitride and Suzhou Nanowin have grown 2-inch GaN self-supporting substrate materials using HVPE. The method uses hydrogen chloride (HCl) by reacting with liquid metal gallium (Ga): [0003] Ga(l)+HCl(g)→GaCl(g)+H 2 (g) [0004] The generated gallium chloride (GaCl) is introduced into the growth area and ammonia (NH 3 )reaction: [0005] [0006] GaN material is thus generated. [0007] In HVPE, generally, HCl gas flows through the liquid metal Ga liquid surface in the Ga boat [Chinese Patent CN 204138762U], and reacts at the gas-l...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B25/16C30B25/14
CPCC30B25/14C30B25/16C30B29/406
Inventor 熊欢陈蛟刘南柳何进密
Owner SINO NITRIDE SEMICON
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