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Preparation method and application of schottky junction explosive atmosphere sensing material

A technology of Schottky junction and sensing materials, which is applied in the direction of analyzing materials, analyzing materials through electromagnetic means, measuring devices, etc., and can solve problems such as complex components and difficult detection

Active Publication Date: 2016-08-17
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many types of non-standard explosives with complex components, and the raw materials come from industrial raw materials, agricultural fertilizers and daily necessities, so detection is very difficult

Method used

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  • Preparation method and application of schottky junction explosive atmosphere sensing material
  • Preparation method and application of schottky junction explosive atmosphere sensing material
  • Preparation method and application of schottky junction explosive atmosphere sensing material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] a. The silicon nanowire array prepared by conventional chemical etching method is used as the substrate, and the absolute ethanol solution of zinc acetate with a concentration of 0.005mol / L is prepared, added dropwise to the silicon nanowire, and dried with nitrogen, Take it out after annealing at 350°C for 0.5h to obtain a ZnO seed-modified silicon nanowire array;

[0033] B, configuration 125mL concentration is respectively the methanol solution of zinc acetate of 0.001mol / L and the methanol solution of potassium hydroxide of 0.003mol / L 65mL concentration, potassium hydroxide solution is added in the zinc acetate solution drop by drop, and step Put the silicon nanowire array modified by ZnO seed crystals obtained in a into the mixed solution, react at a temperature of 60°C for 2 hours, and then repeat the process of step b twice to obtain a silicon-zinc oxide core-shell nanowire array;

[0034] c, transferring the graphene obtained by the wet chemical method to the to...

Embodiment 2

[0038] a. The silicon nanowire array prepared by conventional chemical etching method is used as the substrate, and the absolute ethanol solution of zinc acetate with a concentration of 0.005mol / L is prepared, added dropwise to the silicon nanowire, and dried with nitrogen, Take it out after annealing at 350°C for 0.5h to obtain a ZnO seed-modified silicon nanowire array;

[0039] B, configuration 125mL concentration is respectively the methanol solution of zinc acetate of 0.001mol / L and the methanol solution of potassium hydroxide of 0.003mol / L 65mL concentration, potassium hydroxide solution is added in the zinc acetate solution drop by drop, and step Put the silicon nanowire array modified by ZnO seed crystal obtained in a into the mixed solution, react at a temperature of 50° C. for 2 hours, and then repeat the process of step b once to obtain a silicon-zinc oxide core-shell nanowire array;

[0040] c, transferring the graphene obtained by the wet chemical method to the to...

Embodiment 3

[0044] a. The silicon nanowire array prepared by conventional chemical etching method is used as the substrate, and the absolute ethanol solution of zinc acetate with a concentration of 0.005mol / L is prepared, added dropwise to the silicon nanowire, and dried with nitrogen, Take it out after annealing at 350°C for 0.5h to obtain a ZnO seed-modified silicon nanowire array;

[0045] b, configure 125mL concentration of methanol solution of zinc acetate of 0.05mol / L and 65mL concentration of methanol solution of potassium hydroxide of 0.15mol / L respectively, add potassium hydroxide solution drop by drop in the zinc acetate solution, and step Put the silicon nanowire array modified by ZnO seed crystals obtained in a into the mixed solution, react at a temperature of 80°C for 2 hours, and repeat the process of step b for 3 times to obtain a silicon-zinc oxide core-shell nanowire array;

[0046] c, transferring the graphene obtained by the wet chemical method to the top of the silico...

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Abstract

The invention relates to a preparation method and application of a schottky junction explosive atmosphere sensing material. According to the method, a schottky junction is constructed through a silicon-zinc oxide nuclear shell nanowire array and a nanowire array top graphene top electrode; graphene and the silicon-zinc oxide nuclear shell nanowire array are utilized for forming the schottky junction, the purposes of increasing adsorption sites, improving explosive adsorption energy and adjusting the response magnitude. The sensing material obtained through the method is the silicon-zinc oxide nuclear shell nanowire array / graphene schottky junction. The sensing material is good in response to room temperature steam of eight types of explosives including trinitrotoluene (TNT), dinitrotoluene (DNT), paranitrotoluene (PNT), picric acid (PA), hexogen (RDX), urea, black powder (BP) and ammonium nitrate (AN); the response time and recovery time are short and shorter than 5 seconds.

Description

technical field [0001] The invention relates to an explosive atmosphere sensing material and a preparation method. Specifically relates to a silicon-zinc oxide core-shell nanowire array / graphene Schottky junction sensing material. According to the variation of the current when the sensor contacts the explosive vapor, the detection of the explosive vapor is realized. Background technique [0002] Terrorist bombings seriously endanger social stability and national security. The detection of hidden explosives has always been a problem of great concern in the field of public security at home and abroad. Standard explosives such as trinitrotoluene (TNT), dinitrotoluene (DNT), picric acid (PA) and RDX are the most common and The most widely used class of explosives. There are many types of non-standard explosives with complex components, and the raw materials come from industrial raw materials, agricultural fertilizers and daily necessities, so detection is very difficult. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 窦新存杨政郭林娟祖佰祎
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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