Preparation method of zinc oxide-bismuth oxide thin film varistor

A zinc oxide film, varistor technology, applied in varistor cores, varistors, coating resistance materials, etc., can solve the complex process, low nonlinear coefficient of thin film varistor, difficult to construct problems, to achieve the effect of controllable composition, strictly controllable film deposition and hot dipping conditions, uniform structure and thickness

Inactive Publication Date: 2016-08-17
CHINA UNIV OF GEOSCIENCES (BEIJING)
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Problems solved by technology

However, since the process of preparing composite zinc oxide-bismuth oxide composite thin films and multilayer zinc oxide/bismuth oxide thin film varistors by magnetron sputtering is relatively com

Method used

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  • Preparation method of zinc oxide-bismuth oxide thin film varistor
  • Preparation method of zinc oxide-bismuth oxide thin film varistor
  • Preparation method of zinc oxide-bismuth oxide thin film varistor

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preparation example Construction

[0035] The preparation method of the zinc oxide-bismuth oxide film varistor proposed by the present invention comprises the following steps and contents:

[0036] (1) In radio frequency magnetron sputtering equipment, sintered ZnO with non-stoichiometric ratio n (n=0.6-0.99) is the matrix target, one or more of metal Fe, Co, Ni, Mn and their oxides is the doping target, and the target is fixed on the target position; the clean substrate Fix it on the sample stage; turn on the mechanical pump to low vacuum, turn on the molecular pump when the vacuum degree of the system reaches 0.1Pa, until the vacuum degree of the system reaches 2×10 -4 Above Pa.

[0037] (2) Pass in the working gas argon with a purity of more than 99.99vol.%, and first perform pre-sputtering for 2-10 minutes to remove the pollutants on the target surface; when the glow stabilizes, start the sputtering of the zinc oxide film shot deposition.

[0038] (3) Take out the prepared thin film sample from the magne...

Embodiment 1

[0046] Embodiment 1: ZnO 0.78 The target and the clean highly doped conductive silicon substrate are fixed on the corresponding positions of the radio frequency magnetron sputtering equipment, the chamber is closed, the mechanical pump is first turned on to a low vacuum of 0.1Pa, and then the molecular pump is turned on to a high vacuum of 2×10 -4 Pa. Introduce high-purity argon gas, and pre-sputter for 10 minutes. Deposited at ambient temperature followed by Ar / O 2 The mixed gas ratio is 1:1, the sputtering power is 220W, the sputtering pressure is 1.0Pa, and the deposition time is 20min. An oxygen-deficient zinc oxide film was obtained. Then, the prepared ZnO film was embedded in analytically pure Bi 2 o 3 Soak in powder at 400°C for 40 minutes, and then cool the sample to room temperature with the furnace. Coat the upper and lower surfaces of the sample with silver paste as electrodes, and solder the leads to obtain a varistor, and test its pressure-sensitive performa...

Embodiment 2

[0048] Embodiment 2: the ZnO 0.99 The target, pure Fe target and clean highly doped conductive silicon substrate are fixed on the corresponding positions of the magnetron sputtering equipment, the chamber is closed, the mechanical pump is first turned on to a low vacuum of 0.1Pa, and then the molecular pump is turned on to a high vacuum of 2 ×10 -4 Pa. Introduce high-purity argon gas, and pre-sputter for 2 minutes. Deposition at ambient temperature, only argon, and ZnO at the same time 0.99 Target material and pure Fe target, the sputtering power is 60W, the sputtering pressure is 2.0Pa, and the deposition time is 60min. An iron-doped zinc oxide film was obtained. Then, the prepared ZnO film was embedded in analytically pure Bi 2 o 3 Hot soak in the powder at a temperature of 500°C for 60 minutes, and then cool the sample to room temperature with the furnace. Coat the upper and lower surfaces of the sample with silver paste as electrodes, and weld the leads to obtain a ...

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Abstract

The invention relates to a preparation method of a zinc oxide-bismuth oxide thin film varistor, and belongs to the technical field of preparation and application of electronic information materials. The preparation method includes the steps that with non-stoichiometric sintered ZnOn (n<1) as a matrix target and other metals or oxides thereof as doped targets, deposition is carried out on a conductive substrate with a radio-frequency magnetron sputtering method and an optimized sputtering technology, and a low-resistivity zinc oxide thin film is obtained; then, the zinc oxide thin film is buried in bismuth oxide powder for hot dipping, and the zinc oxide-bismuth oxide thin film varistor is obtained. The thin film varistor has the advantages of being excellent in nonlinear property, controllable in varistor voltage, small in leak current and the like, and has broad application prospects in overvoltage protection of large-scale or super-large-scale integrated circuits. According to the method, thin film deposition and hot dipping conditions are strict and controllable, technological repeatability is good, the thin film device uniform in composition, structure and thickness can be obtained on the large-area substrate, and the method is suitable for large-scale production.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide-bismuth oxide film piezoresistor, belonging to the technical field of electronic information material preparation and application thereof. Background technique [0002] A varistor (Varistor) is a semiconductor material device in which the current through it increases sharply with the increase of the applied voltage at a certain temperature and within a specific voltage range. It is widely used in valve components and various Overvoltage protection components for various electronic components, etc. [0003] At present, commercial varistors are mainly based on ZnO-Bi 2 o 3 Electronic components based on composite ceramic materials. And this ZnO varistor material is mixed and sintered with zinc oxide, bismuth oxide and various other metal oxide additives, such as nickel oxide, manganese oxide and rare earth metal oxides (F.Jiang, et al.Journal of Advanced Ceramics, 2013, 2:201-212.). The ke...

Claims

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Application Information

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IPC IPC(8): H01C7/112H01C17/12
CPCH01C7/112H01C17/12
Inventor 王杨彭志坚王琪符秀丽
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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