Method for large-scale CVD growth of graphene

Abstract

The invention relates to a preparation technology of graphene, in particular to a method for large-scale CVD growth of graphene. According to the method, the mode of alternatively stacking a growth matrix and a solid-phase carbon source is adopted in CVD growth to increase the yield of graphene grown on a large scale in single batches. The growth matrix of a planar structure and the recyclable solid-phase carbon source are utilized and alternatively stacked for CVD growth, large-scale graphene is formed on the upper and lower surfaces of the growth matrix, and the solid-phase carbon source is recycled. Through the mode of alternatively stacking the growth matrix and the solid-phase carbon source, the single-batch loading capacity of the growth matrix is greatly increased, and large-scale high-quality graphene is grown on the upper and lower surfaces of the growth matrix, so that the yield of graphene grown in single batches is increased. High production cost caused by high consumption of a high-purity gas-phase carbon source can be avoided by adopting the recyclable solid-phase carbon source, and thus the method can serve as a low-cost and high-efficiency method for large-scale production of graphene.

Description

Technical field:

[0001] The invention relates to a graphene preparation technology, specifically a large-scale method for growing large-area graphene by high-efficiency CVD in a manner of alternately stacking growth substrates and solid-phase carbon sources. Background technique:

[0002] Graphene is a two-dimensional honeycomb crystal structure formed by densely packing a single layer of carbon atoms, and is the basic structural unit for constructing other dimensional carbon materials (zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). The unique crystal structure of graphene makes it have excellent electrical, thermal and mechanical properties, such as: its electron mobility is as high as 200,000 cm at room temperature 2 / V s, the thermal conductivity is as high as 5300W / m k, and it is expected to be obtained in the fields of multifunctional nanoelectronic devices, transparent conductive films, composite materials, catalytic mate...

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