Method for large-scale CVD growth of graphene

A graphene and large-area technology, which is applied in the field of high-efficiency CVD growth of large-area graphene, can solve problems such as uneven growth of graphene, and achieve the effects of reducing raw material costs, improving integrity, and increasing production

Active Publication Date: 2016-08-24
INST OF METAL RESEARCH - CHINESE ACAD OF SCI +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned problems existing in the existing CVD preparation methods, the purpose of the present invention is to provide a low-cost, high-efficiency CVD large-scale method for growing large-area graphene. The yield of large-area graphene grown in batches, while solving the problem of uneven graphene growth in the prior art when the loading capacity is high

Method used

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  • Method for large-scale CVD growth of graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0028] like figure 1 As shown, metal copper foil (25 μm thick) was used as the growth substrate, and carbon felt (50 μm thick) was used as the solid-phase carbon source. The flat large-area copper foil and carbon felt are stacked alternately, and the number of layers is 200 layers. Put the laminated copper foil and carbon felt into an electrically heated CVD furnace for growth. First, vacuumize the furnace chamber until the pressure is less than 1Pa, then feed in hydrogen gas with a flow rate of 100 sccm, and maintain the pressure at 50Pa; within 30 minutes, raise the furnace temperature to 1000°C, keep it for 10 minutes and then cool it down to room temperature with the furnace. Complete CVD growth. High-quality large-area single-layer graphene is formed on both the upper and lower surfaces of the copper foil, while the carbon felt can be reused for CVD growth.

Embodiment 2

[0030] The difference with embodiment 1 is:

[0031] Other materials are used as solid-phase carbon sources, including flexible graphite paper, carbon nanotube film, fullerene, carbon black or silicon carbide, etc.; the growth is carried out by atmospheric pressure CVD process, and the carrier gas is argon.

Embodiment 3

[0033] like figure 1 As shown, a quartz plate coated with a nickel film (500 nm thick) was used as the growth substrate, and a carbon fiber cloth (200 μm thick) impregnated with epoxy resin was used as the solid-phase carbon source. The nickel film / quartz plate and the carbon fiber / resin cloth are stacked alternately, and the number of layers is 100. The stacked samples were placed in an induction heating CVD furnace for growth. First vacuumize the furnace cavity until the pressure is less than 1Pa, then introduce hydrogen with a flow rate of 50sccm, and maintain the pressure at 20Pa; within 3 minutes, raise the furnace temperature to 1000°C and keep it for 1 minute; then stack the samples Perform rapid cooling to room temperature at a cooling rate of 15° C. / second to complete CVD growth. High-quality large-area few-layer graphene is formed on the surface of the nickel film, and the carbon fiber cloth can be reused for CVD growth.

[0034] The results of the examples show t...

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Abstract

The invention relates to a preparation technology of graphene, in particular to a method for large-scale CVD growth of graphene. According to the method, the mode of alternatively stacking a growth matrix and a solid-phase carbon source is adopted in CVD growth to increase the yield of graphene grown on a large scale in single batches. The growth matrix of a planar structure and the recyclable solid-phase carbon source are utilized and alternatively stacked for CVD growth, large-scale graphene is formed on the upper and lower surfaces of the growth matrix, and the solid-phase carbon source is recycled. Through the mode of alternatively stacking the growth matrix and the solid-phase carbon source, the single-batch loading capacity of the growth matrix is greatly increased, and large-scale high-quality graphene is grown on the upper and lower surfaces of the growth matrix, so that the yield of graphene grown in single batches is increased. High production cost caused by high consumption of a high-purity gas-phase carbon source can be avoided by adopting the recyclable solid-phase carbon source, and thus the method can serve as a low-cost and high-efficiency method for large-scale production of graphene.

Description

Technical field: [0001] The invention relates to a graphene preparation technology, specifically a large-scale method for growing large-area graphene by high-efficiency CVD in a manner of alternately stacking growth substrates and solid-phase carbon sources. Background technique: [0002] Graphene is a two-dimensional honeycomb crystal structure formed by densely packing a single layer of carbon atoms, and is the basic structural unit for constructing other dimensional carbon materials (zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). The unique crystal structure of graphene makes it have excellent electrical, thermal and mechanical properties, such as: its electron mobility is as high as 200,000 cm at room temperature 2 / V s, the thermal conductivity is as high as 5300W / m k, and it is expected to be obtained in the fields of multifunctional nanoelectronic devices, transparent conductive films, composite materials, catalytic mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 任文才马来鹏成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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