A kind of preparation method of zno/zns core-shell nanowire array

A nanowire array, nanoarray technology, applied in nanotechnology, nanooptics, nanotechnology, etc., can solve the problems of hidden safety hazards and high temperature, and achieve the effects of reduced risk, high crystallinity, and good shape retention.

Active Publication Date: 2018-10-12
UNIV OF SHANGHAI FOR SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the above-mentioned technical problems in the prior art, the present invention provides a method for preparing a ZnO / ZnS core-shell nanowire array, and the method for preparing the ZnO / ZnS core-shell nanowire array should solve the problems in the prior art. The method for preparing ZnO / ZnS core-shell nanowire arrays has a high temperature and requires the use of H 2 , technical issues with potential safety hazards

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of zno/zns core-shell nanowire array
  • A kind of preparation method of zno/zns core-shell nanowire array
  • A kind of preparation method of zno/zns core-shell nanowire array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for preparing a ZnO / ZnS core-shell nanowire array, comprising a step of preparing a ZnO nanoarray, using ZnO and graphite powder as raw materials, the two are mixed according to a mass ratio of 1:1, and after fully grinding and mixing, Weigh 0.8 g and put it into a small porcelain boat, the surface of the material is ground, and the Al with a layer of Au catalyst prepared by the electron beam evaporation method is 2 o 3 Put it flat in the center of the material surface in a small porcelain boat, put it into a CVD tube furnace, control the heating time for 30 minutes, when the temperature reaches 910 °C, feed argon, the argon flow rate is 12 sccm, and the holding temperature is 910 °C , the holding time is 5 min, and the temperature is naturally lowered to prepare ZnO nano-arrays;

[0021] It also includes a step of preparing ZnO / ZnS core-shell nano-arrays. The ZnO nano-arrays prepared above are placed in the high-temperature zone of the CVD tube furnace, and a...

Embodiment 2

[0030] This example is basically the same as example 1, the difference is that: in step b, the heat preservation temperature in the high temperature zone is changed to 300°C, 350°C and 500°C, and the intensity of its ZnS characteristic diffraction peak is about the same as that of the heat preservation material at 400°C 0.5 to 3 times.

Embodiment 3

[0032] This example is basically the same as Example 1, except that: in step b, the vulcanization time is changed to 3 min, 10 min and 15 min, and the shell thickness is changed from 15 nm to 200 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a ZnO / ZnS core-shell nanowire array. ZnO and graphite powder are taken as raw materials and placed into a small porcelain boat, Al2O3 with an Au catalyst layer is taken as a substrate and placed flat in the center of the surface of a mixture in the porcelain boat, then the porcelain boat is placed into a CVD tube furnace, argon at the flow velocity of 10-15 sccm is introduced, the temperature is increased to 800-1,000 DEG C within 5-30 min, kept for 3-60 min and then reduced naturally, and an ZnO nano-array is prepared; then the prepared ZnO nano-array is placed into a high-temperature zone of a dual-temperature-zone tube furnace, the small porcelain boat loaded with sulfur powder is placed into a low-temperature zone, sulfurization is realized, natural cooling is performed after a reaction, and the ZnO / ZnS core-shell nanowire array can be obtained. The ZnO / ZnS core-shell nanowire array with high crystallinity can be prepared stably and controllably with the method, and the method is simple in process, low in cost, low in risk and environment-friendly.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and relates to a composite nanomaterial, in particular to a preparation method of a ZnO / ZnS core-shell nanowire array. Background technique [0002] Nanoarrays can be regarded as a novel nanocomposite structure formed by the arrangement of nanostructured material units (such as nanowires, nanorods, nanobelts, nanotubes, etc.) according to certain rules. The nanoarrays with ordered structure not only reflect the collective effect of nanostructure units, but also reflect the synergistic effect and coupling effect. First of all, nanoarrays embody the ingenuity and difficulty of large-scale preparation of structural units with the same orientation at the nanoscale in terms of technology. Second, the unique nanoarray structure as the application unit of nanodevices brings opportunities for the development of new functional devices. In addition, the behavioral characteristics of a single nanost...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C01G9/02
CPCB82Y20/00B82Y30/00B82Y40/00C01G9/02C01G9/08
Inventor 王丁王朋朋王现英祝元坤
Owner UNIV OF SHANGHAI FOR SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap