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Method of preparing porous silicon carbide support at low temperature

A porous silicon carbide and support technology, applied in the field of porous ceramic materials, can solve the problems of high energy consumption and achieve the effects of lower sintering temperature, good gas permeability and chemical stability, and energy saving

Active Publication Date: 2016-08-24
NANJING UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the sintering temperature of 1550°C can still bring large energy consumption, so sintering ceramics at a lower temperature is a major problem at present.

Method used

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  • Method of preparing porous silicon carbide support at low temperature
  • Method of preparing porous silicon carbide support at low temperature
  • Method of preparing porous silicon carbide support at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Calculated by mass ratio, 4% of sodium dodecylbenzenesulfonate (SDBS) powder, 10% of 2 μm zirconia and 86% of 100 μm silicon carbide powder are uniformly mixed. Add polyvinyl alcohol (PVA) aqueous solution with a mass concentration of 10% of the mass of 1% of the mixed powder, mix thoroughly and evenly, and then prepare the tubular porous silicon carbide support body by extrusion method from the mixed powder. Dry the pressed support body in an oven at 60°C for 60 minutes, then put it into a high-temperature electric furnace to raise the temperature to 100°C at 1°C / min, keep it warm for 1 hour, then raise the temperature to 500°C at 2°C / min and Keep it warm for 1 hour, then raise the temperature to 900°C at 2°C / min, then raise the temperature to 1150°C at 1°C / min, keep it warm for 4 hours, and then cool down naturally.

[0028] The test results are: the porosity of the prepared porous silicon carbide support is 27.7%, and the bending strength is 13.6MPa.

Embodiment 2

[0030] Calculated by mass ratio, 8% SDBS powder, 10% 20 μm activated carbon powder, 10% 4 μm zirconia and 72% 100 μm silicon carbide powder were uniformly mixed. Add 3% of the mixed powder mass and 8% PVA aqueous solution, mix thoroughly and evenly, and then prepare the tubular porous silicon carbide support body by extrusion method from the mixed powder. Dry the pressed support body in an oven at 90°C for 70 minutes, then put it into a high-temperature electric furnace to raise the temperature to 100°C at 1°C / min, keep it warm for 2 hours, then raise the temperature to 500°C at 2°C / min and Keep it warm for 2 hours, then raise the temperature to 900°C at 2°C / min, then raise the temperature to 1150°C at 1°C / min, keep it warm for 5 hours, and then cool down naturally.

[0031] The test results are: the porosity of the prepared porous silicon carbide support is 40.7%, and the bending strength is 27.57MPa.

Embodiment 3

[0033] Calculated by mass ratio, 8% SDBS powder, 15% 10 μm activated carbon powder, 5% 5 μm zirconia and 72% 50 μm silicon carbide powder were uniformly mixed. Add 3% PVA aqueous solution with a mass fraction of 8% and mix thoroughly and uniformly, and then prepare the flat porous silicon carbide support body by extrusion method from the mixed powder. Dry the pressed support body in an oven at 90°C for 80 minutes, then put it into a high-temperature electric furnace to raise the temperature to 100°C at 1°C / min, keep it warm for 2 hours, then raise the temperature to 500°C at 3°C / min and Keep it warm for 3 hours, then raise the temperature to 900°C at 3°C / min, then raise the temperature to 1150°C at 1°C / min, keep it warm for 5h, and then cool down naturally.

[0034] The test results are: the porosity of the prepared porous silicon carbide support is 43.7%, and the bending strength is 21.3 MPa.

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Abstract

The invention relates to a method of preparing a porous silicon carbide support at low temperature. The method includes: using sodium dodecyl benzene sulfonate (SDBS) and ZrO2 as sintering auxiliaries, activated carbon powder as a pore forming agent and silicon carbide powder as aggregate; mixing well; obtaining a blank through dry pressing; drying in an oven; sintering at sintering temperature of about 1150 DEG C to obtain the silicon carbide support. By using the method, sintering temperature can be lowered, and energy consumption can be saved. The support prepared by the method has high strength, high gas permeation performance and excellent chemical stability and has quite wide application prospect in the aspects of high-temperature flue gas dedusting and wastewater treatment.

Description

technical field [0001] The invention belongs to the technical field of porous ceramic materials, and in particular relates to a method for preparing a porous silicon carbide support body at low temperature. Background technique [0002] Porous silicon carbide has the advantages of high temperature resistance, corrosion resistance, good thermal stability and high strength, and has great application prospects in the fields of high temperature gas dust removal and wastewater treatment. Due to the high sintering temperature required in the preparation of silicon carbide ceramics, usually above 2000 ° C [Agnieszka G, Ludoslaw S, Pawel L.J Eur Ceram Soc, 2007; 27(2-3):781-9], resulting in its The high cost of preparation limits its large-scale application. Therefore, the preparation of porous silicon carbide ceramics with high permeability at low temperature is an urgent problem to be solved. [0003] In order to reduce the sintering temperature of ceramics, the commonly used met...

Claims

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Application Information

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IPC IPC(8): C04B38/06C04B35/565
CPCC04B35/565C04B38/06C04B2235/96C04B2235/3244
Inventor 仲兆祥邢卫红杨怡韩峰张峰徐鹏范益群
Owner NANJING UNIV OF TECH
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