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Detection window for CMP (chemical mechanical polishing) pad and preparation method of detection window

A chemical mechanical and detection window technology, which is applied in the detection window of chemical mechanical polishing pads and its preparation field, can solve the problems of affecting the end point, undesired degradation and discoloration, wear blur, etc., and achieve good light transmission, long service life, The effect of low production cost

Active Publication Date: 2016-09-07
HUBEI DINGLONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, traditional polymer-based endpoint detection windows often exhibit undesired degradation and discoloration when exposed to visible light, and end-point judgment is compromised by abrasion blur from friction from trimmers or slurries during use.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Put 25.85g of XDI (xylylene diisocyanate) into the three-necked flask, raise the reaction temperature to 75°C within 30 minutes, start the stirrer, and the stirring speed is 300 rpm. 90g molecular weight is 1000 PTMEG (polytetramethylene ether glycol) and 10g thiol compound HS-[CH 2 ] n The mixture of -SH, (n=50-80, molecular weight 1000-1200) was added dropwise to XDI, and the dropping time was controlled at 0.5 hour. After the dropwise addition, continue the dropwise addition and keep warm at 80°C for 2 hours, then perform defoaming treatment on the reactant, control the vacuum degree of defoaming to -0.096MPa, 80°C, 30 minutes, and obtain the prepolymer 1, NCO%=2.5wt%.

[0025] The same method can obtain prepolymer embodiment 2-8. (See Table 1)

[0026] Table I

[0027] Numbering

[0028] Preparation method of high light transmittance detection window

Embodiment 9

[0030] Take by weighing the prepolymer in 100g embodiment 1 and 6.36g MOCA (4,4'-methylene-bis-(2-chloroaniline)), put into beaker and be warmed up to 110 ℃, after MOCA melts and Start stirring to make it evenly mixed, pour the final mixture into the mold, and put it in a curing oven together with the mold, keep it at 90°C for 16 hours, then cool it down to room temperature within 0.5 hours, demould, that is, high light transmittance Rate Detection Window Example 9.

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Abstract

The invention relates to a detection window for a CMP (chemical mechanical polishing) pad and a preparation method of the detection window. According to the technical scheme, an isocyanate-terminated prepolymer and a curing agent are evenly mixed and cured, and the CMP pad is prepared, wherein the isocyanate-terminated prepolymer is prepared from three following raw materials through mixing reactions: a raw material A is isocyanate with an isocyanate radical not directly connected with a benzene ring, a raw material B is polyol with the molecular weight being 500-1,500, a raw material C is a difunctional thiol compound, and the raw material C accounts for 1wt%-99wt% while the raw material B and the raw material C amount to 100wt%. The technology is simple, the production cost is low, and the prepared detection window is good in light transmission, stable in performance and long in service life.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a detection window of a chemical mechanical polishing pad and a preparation method thereof. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, it is necessary to deposit or remove layers of conductive, semiconductive and dielectric materials from the surface of semiconductor wafers. Thin layers of conductive, semiconductive, and dielectric materials can be deposited by a number of deposition techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP) . [0003] As layers of material are sequentially deposited or removed, the topmost surface layer of the wafer becomes uneven. Since subsequent semiconductor processing (such as metallization) requires the wafer to have a flat surface, it is necessary to planari...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/20B29C39/02C08G18/12C08G18/48C08G18/38C08G18/76
CPCB24B37/205B29C39/02C08G18/12C08G18/3876C08G18/4854C08G18/7642C08G18/3243
Inventor 朱顺全梅黎黎
Owner HUBEI DINGLONG CO LTD