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Preparation method of chlorine-doped bismuth ferrite photoelectric film

A photoelectric thin film, bismuth ferrite technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of inability to remove unreacted raw materials and by-products with concentrated nitric acid, unsuitable thin film materials, etc., and achieve easy control of thin film thickness, The doping concentration is easy to control and the effect of increasing the light absorption rate

Inactive Publication Date: 2016-10-12
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the preparation of doped films, concentrated nitric acid cannot be used to remove residual unreacted raw materials and by-products, so the preparation method described in this patent is not suitable for the preparation of film materials

Method used

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  • Preparation method of chlorine-doped bismuth ferrite photoelectric film
  • Preparation method of chlorine-doped bismuth ferrite photoelectric film
  • Preparation method of chlorine-doped bismuth ferrite photoelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] a, ferric trichloride, ferric nitrate, bismuth nitrate are mixed in a molar ratio of 0.01:1:1.05 (that is, ferric trichloride 0.0033g, ferric nitrate 0.4847g, bismuth nitrate 0.8295g), according to the content of bismuth ions in the solute The volume ratio of the solvent to the solvent ethylene glycol methyl ether is 0.21mol / L, and then mixed with 10ml of the solvent ethylene glycol methyl ether, heated and stirred at 50°C for 30min, then cooled to room temperature, added 10ml of glacial acetic acid, and stirred at room temperature for 3h. Stand and age for 12h, filter to obtain the clarified liquid;

[0021] b. Take 40 μl of the clarified solution obtained in step a and drop it on the 2 On the fluorine-doped tin oxide transparent conductive glass substrate, use a spin coater to spin coat at a speed of 3000r / min for 20 seconds;

[0022] c. Place the sample obtained in step b in a tube furnace, heat it at a temperature of 300° C. for 5 minutes, and cool it to room tempe...

Embodiment 2

[0026] a. Ferric trichloride, ferric nitrate, and bismuth nitrate are mixed in a molar ratio of 0.02:1:1.05 (that is, ferric trichloride 0.0129g, ferric nitrate 0.9694g, bismuth nitrate 1.6589g), according to the content of bismuth ions in the solute The volume ratio of volume to solvent is 0.42mol / L, then mixed with 10ml of solvent ethylene glycol methyl ether, heated and stirred at 50°C for 10min, then cooled to room temperature, added 10ml of glacial acetic acid solvent, stirred at room temperature for 1h, and left to age 12h, filter to obtain clarified liquid;

[0027] b. Take 40 μl of the clarified solution obtained in step a and drop it on the 2 On the silicon substrate, use the spin coater to spin coat for 20 seconds under the rotating speed of 2000r / min;

[0028] c. Place the sample obtained in step b in a tube furnace, heat it at 200° C. for 5 minutes, and cool it to room temperature in air;

[0029] d. On the sample obtained in step c, repeat step b and step c 10 t...

Embodiment 3

[0032] a, ferric trichloride, ferric nitrate, bismuth nitrate are mixed in a molar ratio of 0.02:1:1.05 (i.e. ferric trichloride 0.0194g, ferric nitrate 1.4541g, bismuth nitrate 2.4884g), according to the content of bismuth ions in the solute The volume ratio of volume to solvent is 0.63mol / L, then mixed with 10ml of solvent ethylene glycol methyl ether, heated and stirred at 50°C for 20min, then cooled to room temperature, added 10ml of glacial acetic acid solvent, stirred at room temperature for 6h, and left to age 12h, filter to obtain clarified liquid;

[0033] b. Take 40 μl of the clarified solution obtained in step a and drop it on the 2 On the indium tin oxide transparent conductive glass substrate, use a spin coater to spin coat at a speed of 4000r / min for 20 seconds;

[0034] c. Place the sample obtained in step b in a tube furnace, heat it at a temperature of 300° C. for 5 minutes, and cool it to room temperature in air;

[0035] d. On the sample obtained in step c...

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Abstract

The invention relates to a preparation method of chlorine-doped bismuth ferrite photoelectric film. The method includes: mixing and dissolving bismuth nitrate, iron nitrate and ferric trichloride in ethylene glycol monomethyl ether, heating and stirring, cooling to room temperature, adding glacial acetic acid, continuing to stir, ageing and filtering to obtain sol-gel precursor solution, spinning to a substrate, and annealing at a set temperature to obtain the chlorine-doped bismuth ferrite photoelectric film. The chlorine-doped bismuth ferrite photoelectric film sample obtained through the method described herein has trigonal perovskite structure as well as good light-absorbing characteristic and is potentially applicable to the field of multifunctional photoelectric devices. The method described herein has simple steps and low equipment cost and facilitates large-scale production.

Description

technical field [0001] The invention relates to a preparation method of a chlorine-doped bismuth ferrite photoelectric thin film, belonging to the field of inorganic photoelectric thin film materials. Background technique [0002] Bismuth ferrite (BiFeO 3 , BFO) is a ferromagnetic material with a triangular twisted perovskite structure (belonging to the R3C point group), which has two structural orders at the same time at room temperature, namely ferroelectric order (T c =1103K) and G-type antiferromagnetic order (T N =643K), it is one of the few ferroelectric materials with both ferroelectricity and antiferromagnetism at room temperature. The coexistence of ferroelectricity and magnetism not only makes it have important application prospects in magnetic and ferroelectric devices, but also makes it have magnetoelectric coupling properties, which are considered to be of great significance in new memory devices. [0003] In order to further improve the optical and electrica...

Claims

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Application Information

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IPC IPC(8): C03C17/34H01L31/18H01L31/032
CPCC03C17/3494C03C2217/70C03C2217/94C03C2217/948C03C2218/116C03C2218/32H01L31/032H01L31/18Y02P70/50
Inventor 王磊王贺勇任卫马超常爱民徐金宝边亮
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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