A method for preparing sulfur-doped graphene film

A technology of sulfur-doped graphene and graphene, applied in metal material coating process, coating, gaseous chemical plating and other directions, can solve the problems of increasing the preparation process of doped graphene film, and achieve large-scale industrial production , strong operability, simple and controllable preparation process

Inactive Publication Date: 2018-10-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Liang Chen and others from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences disclosed a method for sulfur-doping graphene with a sulfur source gas in the patent application number 201310080785.3. The method of doping, which is a post-treatment doping of graphene, needs to prepare a graphene film before doping, which greatly increases the preparation process of doped graphene film

Method used

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  • A method for preparing sulfur-doped graphene film
  • A method for preparing sulfur-doped graphene film
  • A method for preparing sulfur-doped graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Step A: Wash the copper foil with a thickness of 25 microns and an area of ​​10 cm × 10 cm with 30% dilute hydrochloric acid, deionized water, and absolute ethanol in sequence, each cleaning time is 5 minutes, and finally use Blow dry with nitrogen; figure 1As shown, the cleaned copper foil is placed in the central temperature zone of the reaction chamber of the chemical vapor deposition system, and the central temperature zone of the reaction chamber of the chemical vapor deposition system is used as the first heating zone, and 200 mg of thianthrene is weighed and placed in the In the sample boat, the sample boat is placed at the front end of the first heating zone, and is insulated from the first heating zone, and the sample boat is heated by a heating belt, and the heating belt is used as the second heating zone;

[0037] Step B: Use a mechanical pump to pump the pressure of the reaction chamber of the chemical vapor deposition system to 5 Pa, and then introduce a mi...

Embodiment 2

[0044] Step A: Wash the copper foil with a thickness of 25 microns and an area of ​​10 cm × 10 cm with 30% dilute hydrochloric acid, deionized water, and absolute ethanol in sequence, each cleaning time is 5 minutes, and finally use Blow dry with nitrogen; figure 1 As shown, the cleaned copper foil is placed in the central temperature zone of the reaction chamber of the chemical vapor deposition system, and the central temperature zone of the reaction chamber of the chemical vapor deposition system is used as the first heating zone, and 100 mg of thianthrene is weighed and placed in the In the sample boat, the sample boat is placed at the front end of the first heating zone, and is insulated from the first heating zone, and the sample boat is heated by a heating belt, and the heating belt is used as the second heating zone;

[0045] Step B: Use a mechanical pump to pump the pressure of the reaction chamber of the chemical vapor deposition system to 5 Pa, and then introduce a m...

Embodiment 3

[0052] Step A: Wash the copper foil with a thickness of 25 microns and an area of ​​50 cm × 20 cm with 30% dilute hydrochloric acid, deionized water, and absolute ethanol in sequence, each cleaning time is 5 minutes, and finally use Blow dry with nitrogen; figure 1 As shown, the cleaned copper foil is placed in the central temperature zone of the reaction chamber of the chemical vapor deposition system, and the central temperature zone of the reaction chamber of the chemical vapor deposition system is used as the first heating zone, and 100 mg of thianthrene is weighed and placed in the In the sample boat, the sample boat is placed at the front end of the first heating zone, and is insulated from the first heating zone, and the sample boat is heated by a heating belt, and the heating belt is used as the second heating zone;

[0053] Step B: Use a mechanical pump to pump the pressure of the reaction chamber of the chemical vapor deposition system to 5 Pa, and then feed a mixed ...

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Abstract

The invention discloses a method for preparing a sulfur-doped graphene film, and relates to the field of preparation of novel two-dimensional nanometer materials. The invention comprises the following steps: respectively placing the metal substrate and thianthrene in a heat-insulated heating zone of a reaction chamber of a chemical vapor deposition system; feeding mixed gas into the reaction chamber under vacuum conditions; annealing the metal substrate at high temperature After treatment, keep warm at the preparation temperature of the graphene film, then heat the thianthrene to vaporize it, and transport the thianthrene gas to the metal substrate through the mixed gas to react, and finally prepare the sulfur-doped graphene film on the metal substrate . The preparation process of the present invention is simple, the cost is low, large-scale industrial production can be realized, and the raw materials are green and pollution-free; the number of layers, doping content and area of ​​the sulfur-doped graphene film prepared by the present invention can be flexibly adjusted by controlling related parameters, thereby The preparation of sulfur-doped graphene films with different properties is of great value in the field of basic scientific research and practical applications such as sensors.

Description

technical field [0001] The invention relates to the field of preparation of novel two-dimensional nanomaterials, in particular to a method for preparing a large-area sulfur-doped graphene film based on the principle of chemical vapor deposition. Background technique [0002] Since the preparation of graphene by mechanical exfoliation method in 2004 by Professors Andre Heim and Konstantin Novoselov of the University of Manchester, UK, more and more excellent properties of graphene have been confirmed by the laboratory. Studies have shown that graphene films have excellent electrical, optical, and electrochemical properties, such as high carrier mobility, extremely high light transmittance, and specific surface area. Therefore, graphene films can be widely used in the fields of semiconductor, energy storage and sensing. [0003] The conduction band and valence band of intrinsic graphene intersect at the Fermi level, where the carriers exhibit a linear dispersion relationship....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/448C23C16/01C23C16/02
CPCC23C16/01C23C16/0209C23C16/26C23C16/4488
Inventor 陈远富周金浩刘竞博戚飞郑斌杰贺加瑞王新强李谦李萍剑张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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