Fin type fast recovery super-junction power semiconductor transistor and preparation method thereof

Abstract

The invention discloses a fin type fast recovery super-junction power semiconductor transistor and a preparation method thereof. The fin type fast recovery super-junction power semiconductor transistor comprises an N-type substrate, wherein an N-type epitaxial layer is arranged on the N-type substrate; second columnar P-type body regions are arranged in the N-type epitaxial layer; a first P-type body region is arranged on the top of the N-type epitaxial layer, and the first P-type body region is positioned between the two second columnar P-type body regions; the surface of the N-type epitaxial layer is provided with an N-type heavily-doped source region and a P-type heavily-doped semiconductor contact region; the N-type heavily-doped source region, the P-type heavily-doped semiconductor contact region and the second P-type body region are connected with source electrode metals; polysilicon gates are arranged on two sides of the first P-type body region respectively; the second columnar P-type body regions are terminated at the lower surfaces of the polysilicon gates, and the second columnar P-type body regions are lower than the first P-type body region; gate oxide layers are arranged between the polysilicon gates and the first P-type body region, the N-type epitaxial layer and the second P-type body regions; insulated layers are arranged between the polysilicon gates and the source electrode metals; and the gate oxide layers enable the first P-type body region and the second P-type body regions to be separated from each other.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, in particular to a fin-type fast-recovery super-junction power semiconductor transistor and a preparation method thereof. The transistor is especially suitable for bridge rectification systems. Background technique [0002] Power semiconductor devices are the intrinsic driving force of continuously developing power-electronic systems, especially in terms of energy saving, dynamic control, noise reduction, etc. In the past three decades, power devices have achieved leapfrog development, especially power metal oxide semiconductor field effect transistors (MetalOxideSemiconductorFieldEffect Transistor, MOSFET). On-resistance, under the premise of ensuring the breakdown voltage, in order to obtain a larger on-current, the concept of "super junction" was proposed in the early 1990s, using alternate P columns and N columns to replace the traditional power device. The N-type ...

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Problems solved by technology

However, compared with the traditional MOSFET, the super junction structure has a significant disadvantage: the body diode reverse recovery hardness is high and the time is long

Traditional methods use electron irradiation or heavy metal doping to control the minority carrier lifetime, reduce the reverse recovery charge, and reduce the reverse recovery peak current, but this will increase the manufacturing cost of the device and lead to large leakage and reduced long-term reliability.

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