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Rare earth doped metal oxide nanometer material and preparation method and application thereof
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A nanomaterial, rare earth doping technology, applied in the field of materials
Inactive Publication Date: 2016-10-12
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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However, the up-conversion material is placed inside the solar cell as a functional interface layer, which has not been reported yet.
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[0082] The present invention also provides a kind of preparation method of described nano material, described method comprises the following steps:
[0083] a-1) providing a first mixed solution comprising a first solvent and a salt of a metal element for forming a metal oxide, a salt of a rare earth element for doping the metal oxide dissolved therein Salt;
[0084] a-2) heating the mixed solution obtained in the preceding steps to obtain a precursor precipitate;
[0085] a-3) Calcining the precursor precipitate to obtain the nanomaterial.
[0086] In another preferred example, before step a-2), steps are also included:
[0087] a-2-00) providing a second mixed solution comprising a second solvent and a precipitant dissolved therein;
[0088] a-2-01) Mixing the first mixed solution and the second mixed solution under stirring condition to obtain a third mixed solution.
[0149] 1) Get 250mg ammoniummolybdatetetrahydrate (AHM, (NH 4 ) 6 ·Mo 7 o 24 4H 2 O), 150mg ytterbium trifluoroacetate (Yb-TFA) and 15mg erbium trifluoroacetate (Er-TFA) were added in the reaction bottle of 20mL deionized water, stirred until all the reactants added were dissolved, forming a transparent and uniform solution ;
[0150] 2) adding trifluoroacetic acid (TFA) to adjust the pH of the solution to 3;
[0151] 3) Heat the solution to 60°C in an oil bath, keep it for 60 minutes, and a white precipitate precipitates;
[0152] 4) After reacting for a certain period of time, centrifuge to remove the supernatant and collect the precipitate, add deionized water / ethanol mixed solution to wash the precipitate, and repeat the centrifugation of the precipitate 3 times;
[0153] 5) Anneal and sinter the final precipitate obtained in the above step 4) at a high temperature of 700°C for 4 hours to obtain MoO with a partic...
[0183] With embodiment 1, difference is: active layer material adopts PCE-10:PC 71 BM instead of P3HT:PC 61 BM.
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Abstract
The invention relates to a rare earth doped metaloxide nanometer material and a preparation method and application thereof. Specifically, the nanometer material comprises a metaloxide and rare earth elements doped in the metaloxide, the metal oxide is a semiconductor material, and in terms of total weight of the nanometer material, the doping amount of the rare earth elements is 0.5wt% to 5wt%. The invention also discloses the preparation method and application of the nanometer material. A clad layer (or coating) prepared from the nanometer material is applied into a solar cell as an interface layer, ideal electricity property of an obtained solar cell device can be realized, and absorption and utilization for near infrared photons are realized, so that the photoelectric conversion efficiency of the solar cell is improved.
Description
technical field [0001] The invention relates to the field of materials, in particular to a rare earth-doped metal oxide nanometer material and a preparation method and application thereof. Background technique [0002] The main ways of energy loss in solar cells include: 1. Photonenergy loss, which includes short-wavelength high-energy photons due to energy greater than the semiconductorband gap, the excess energy after exciting the semiconductor will be lost as heat energy, and long-wavelength low-energy photons due to The energy cannot be excited and the semiconductor cannot be absorbed and lost; second, the electrical loss, which mainly comes from the recombination of carriers in each layer and between layers in the battery. Among them, organic solar cell semiconductors usually have larger energy band gaps due to their excitonic properties, so the wavelengths of photons they absorb are shorter. Therefore, the energy loss caused by the inability to absorb a large number ...
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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/10H10K2102/00Y02E10/549
Inventor 王海桥方俊锋刘小辉
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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