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a semiconductor device

A semiconductor and device technology, applied in the field of high-voltage and/or power devices, can solve problems such as device failure, low switching speed, and no current saturation, and achieve the effects of large safe working area, high current capability, and low conduction voltage drop

Active Publication Date: 2019-03-05
NANJING SINNOPOWER TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the control of the turn-on and turn-off of thyristor devices needs to be realized by applying a voltage to the p2 layer, especially in the turn-off phase, the potential of the p2 region is lower than that so that the n2 region cannot inject a large amount of electrons into the n1 region. This process requires A long time leads to low switching speed; moreover, the turn-off process is prone to current concentration effect and makes the device fail; during the turn-off process, most of the current flowing from the anode flows away from the gate in contact with the p2 region, Therefore, the gate drive loss is very large
In addition, due to the positive feedback mechanism of the pnpn four-layer structure of the thyristor device, the current does not have the ability to saturate when it is turned on, so the safe operating area of ​​​​the device is not high.

Method used

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Experimental program
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Embodiment 1

[0046] image 3A structural schematic diagram of a semiconductor device proposed by the present invention, the semiconductor device is controlled by an n-MOSFET BJT, and the semiconductor device includes three parts: an n-MOSFET, a bipolar transistor p-BJT and a two-terminal element , these three parts are separated from each other by dielectric or junction or are made on different substrates respectively. Among them, the drain d of the n-MOSFET is connected to the base b of the p-BJT through a conductor; the collector c of the p-BJT is connected to the first terminal x of the two-terminal element W through a conductor; the source of the n-MOSFET s is in turn connected to the second end y of the two-terminal element W through a conductor. The semiconductor device of the present invention is a three-terminal device macroscopically, wherein the emitter e of the p-BJT is the first electrode A, and the source s of the n-MOSFET is connected with the second terminal y of the two-te...

Embodiment 2

[0064] In the above embodiment, when the n-MOSFET is turned off and the VAB value is in a steady state, the voltage Vds of the drain d of the n-MOSFET relative to the source s is equal to the voltage Vds of the base b of the p-BJT relative to the collector c The sum of the voltage Vbc and the voltage Vxy across the two-terminal element W. In fact, at this time, the n-type base region 21 and the p-type collector region 24 form a reverse-biased pn junction, and as VAB increases, the reverse-bias voltage Vbc of the pn junction also increases. Obviously, the breakdown voltage of n-MOSFET must be greater than the sum of Vbc and Vxy under the maximum VAB value that the device can withstand.

[0065] As we all know, the structure of MOSFET has various structures depending on the breakdown voltage. Figure 4 and Figure 5 Two other different n-MOSFET structures are shown separately. in Figure 4 It is a vertical double diffused MOSFET (VDMOS) structure with a vertical conduction c...

Embodiment 3

[0068] Figure 5 It is a schematic diagram of a MOSFET structure using a trench gate (Trench). Figure 5 It also has a vertical conductive channel, 17 and 13 are the drain regions of the n-MOSFET, wherein the doping concentration of the drain region 17 is lower than that of the drain region 13 to improve the withstand voltage of the device. The drain d is connected to the electron drain region 13 on the lower surface. Generally speaking, Figure 4 and Figure 5 MOSFET YoY image 3 MOSFETs have higher breakdown voltages.

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Abstract

A semiconductor device, comprising at least one n-MOSFET, at least one p-BJT, and at least one two-terminal element (W), said three parts being isolated with one another by dielectrics or junctions or manufactured on different substrates respectively. The two-terminal element (W) is provided with a first terminal (X) and a second terminal (Y). A drain electrode of the n-MOSFET is connected with a base electrode of the p-BJT via a conductor. A collector electrode of the p-BJT is connected with the first terminal of the two-terminal element via a conductor. A source electrode of the n-MOSFET is connected with the second terminal of the two-terminal element via a conductor. The device has faster switching speed and larger safe operating area, and has higher current capacity and lower on-stage voltage drop; and the device can be easily driven because the MOSFET is used to control.

Description

technical field [0001] The invention belongs to a semiconductor device, especially a high-voltage and / or power device, which can be used as a discrete device or a power module. Background technique [0002] As we all know, the cell structure of an insulated gate bipolar transistor (IGBT) is a combination of a metal-oxide-field-effect transistor (MOSFET) and a bipolar transistor (BJT). figure 1 A schematic diagram of the structure of an n-IGBT cell is shown. When the voltage on the IGBT gate G exceeds its MOSFET threshold voltage, electrons will enter the n-type withstand voltage region from the n+ source region of the MOSFET through the MOSFET channel, and finally reach the p-type anode region at the bottom. At this time, a large number of holes will be injected from the p-type anode region into the n-type withstand voltage region to form conductance modulation. Since the IGBT uses bipolar carriers when it is turned on, its current capability is greatly increased when it i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567H03K17/04H01L25/18
CPCH01L29/739
Inventor 骆宁
Owner NANJING SINNOPOWER TECH CO LTD