High temperature resistant radar and infrared compatible camouflage material and preparation method thereof

A stealth material and high-temperature-resistant technology, which is applied in the field of high-temperature-resistant radar and infrared-compatible stealth materials and their preparation, can solve problems such as lack of infrared stealth performance, poor broadband and low-frequency absorbing performance, and no contribution to absorbing performance, etc., to achieve It is easy to realize the effect of engineering application, good broadband absorbing function and good low frequency absorbing performance

Active Publication Date: 2016-11-16
NAT UNIV OF DEFENSE TECH
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  • Application Information

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Problems solved by technology

[0003] Chinese patent No. ZL201110052236.6 and Chinese patent No. ZL201310078127.0 respectively disclose two resin-based radar infrared compatible stealth materials and their preparation methods. These materials have good radar infrared compatible stealth performance, but the proposed stealth material system is only It is suitable for below 200°C, and it is difficult to apply to high temperature environments. In addition, the proposed radar infrared compatible stealth material structure has the following obvious deficiencies: the surface of the radar infrared compatible stealth material published in Chinese Patent No. ZL201110052236.6 can only use grid-type capacitive frequency selection Surface, the design range is narrow; the limited range of structural parameters can only achieve good absorbing function in the 6-18GHz high-frequency band, and the minimum thickness of the material needs to be greater than 4.5mm; the absorbing performance of the prepared stealth material completely passes the absorbing function The layer is a composite material layer, and the frequency-selective surface layer only serves as an infrared stealth function and does not contribute to the absorbing performance. The coupling effect of the frequency-selective surface and the absorbing structure on the electromagnetic field is not fully considered to realize the collaborative absorbing function.
The radar infrared compatible stealth material published by Chinese patent ZL201310078127.0 adopts a double-layer metamaterial structure, which has a complex structure, and can only achieve good wave-absorbing performance in the C or X single frequency band, and the broadband and low-frequency wave-absorbing performance is poor.
[0004] Chinese Patent No. ZL201110053460.7, Chinese Patent No. ZL201110052115.1, Chinese Patent No. ZL201210139046.2, and Chinese Patent No. ZL201410128311.6 disclose several continuous fiber-reinforced ceramic-based wave-absorbing composite materials and their preparation methods. This kind of wave-absorbing composite material has good wave-absorbing performance and temperature resistance, but it does not have infrared stealth performance, and it only has good wave-absorbing function in the high-frequency band, and it is difficult to expand the wave-absorbing frequency band to low frequencies.

Method used

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  • High temperature resistant radar and infrared compatible camouflage material and preparation method thereof
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Embodiment 1

[0045] A high temperature resistant radar and infrared compatible stealth material of the present invention, the structure diagram is as follows figure 1 As shown, it is mainly composed of a silicon carbide composite material layer, an oxidation-resistant modification layer, and a rectangular metal frequency selective surface layer; among them, the silicon carbide composite material layer is a superimposed structure composed of dielectric layer I, loss layer, and dielectric layer II. The resistivity of continuous silicon carbide fibers in dielectric layer I and dielectric layer II are both 7×10 6 Ω·cm~8×10 6 Ω·cm, the thickness of dielectric layer I and dielectric layer II are 2.05mm and 2.5mm respectively; the resistivity of the continuous silicon carbide fiber in the loss layer is 5.2Ω·cm, and the thickness of the loss layer is 0.4mm; the anti-oxidation modification layer refers to Cordierite glass coating, the thickness is 0.05mm; the metal coating refers to the platinum coati...

Embodiment 2

[0054] A high temperature resistant radar and infrared compatible stealth material of the present invention, the structure diagram is as follows figure 1 As shown, it is mainly composed of a silicon carbide composite material layer, an oxidation-resistant modification layer, and a rectangular metal frequency selective surface layer; among them, the silicon carbide composite material layer is a superimposed structure composed of dielectric layer I, loss layer, and dielectric layer II. The resistivity of continuous silicon carbide fibers in dielectric layer I and dielectric layer II are both 7×10 6 Ω·cm~8×10 6 Ω·cm, the thickness of dielectric layer I and dielectric layer II are 2.3mm and 2.5mm respectively; the resistivity of the continuous silicon carbide fiber in the loss layer is 4.8Ω·cm, and the thickness of the loss layer is 0.4mm; the anti-oxidation modification layer is Refers to the cordierite glass coating with a thickness of 0.1mm; the metal coating refers to the platinu...

Embodiment 3

[0063] A high temperature resistant radar and infrared compatible stealth material of the present invention, the structure diagram is as follows figure 1 As shown, it is mainly composed of a silicon carbide composite material layer, an anti-oxidation modification layer, and a rectangular metal frequency selective surface layer; among them, the silicon carbide composite material layer is a superimposed structure composed of dielectric layer I, loss layer, and dielectric layer II , The resistivity of continuous silicon carbide fibers in dielectric layer I and dielectric layer II are both 7×10 6 Ω·cm~8×10 6 Ω·cm, the thickness of dielectric layer I and dielectric layer II are 4.97mm and 4.92mm, respectively; the resistivity of the continuous silicon carbide fiber in the loss layer is 6.5Ω·cm, and the thickness of the loss layer is 0.41mm; among them, the oxidation-resistant modified layer It refers to the cordierite glass coating, the thickness of the anti-oxidation modification lay...

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Abstract

The invention discloses a high temperature resistant radar and infrared compatible camouflage material with a layered structure. The material from the inside to the outside is mainly composed of a silicon carbide composite layer, an anti-oxidation modification layer, a metal frequency selective surface layer, wherein the anti-oxidation modification layer is a cordierite glass coating; the metal frequency selective surface layer is mainly composed of a high temperature resistant and oxidation resistant metal coating with periodic patterns. The preparation method comprises the steps of: preparing a silicon carbide composite layer by using a precursor infiltration and pyrolysis process; then evenly coating the silicon carbide composite layer surface with cordierite glass slurry by a brushing process; preparing an anti-oxidation modification layer on the surface of the silicon carbide composite material; preparing a metal coating on the anti-oxidation modification layer by a physical deposition process; and finally etching the metal coating into a frequency selective surface by a laser etching process, so as to complete the preparation of the radar and infrared compatible camouflage material. The high temperature resistant radar and infrared compatible camouflage material can withstand high temperature of above 1000 DEG C.

Description

Technical field [0001] The invention mainly relates to the field of high-temperature resistant stealth materials, in particular to a high-temperature resistant radar and infrared compatible stealth material and a preparation method thereof. Background technique [0002] With the development of radar and infrared composite detection and guidance technology, materials with radar infrared compatible stealth performance have become an important research direction. However, there are inherent contradictions in the realization of radar infrared compatible stealth with the same material. The reason is that radar stealth requires the material to have strong electromagnetic wave absorption and low reflection, while infrared stealth requires the material to have low absorption and high reflection. Therefore, how to resolve the contradiction between the two through material structure design is the key to achieving radar infrared compatible stealth. At the same time, with the new developmen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B41/90
CPCC04B35/565C04B41/009C04B41/52C04B41/90C04B2235/9607C04B2235/9646C04B41/5022C04B41/5116C04B41/5122C04B41/522
Inventor 刘海韬黄文质程海峰周永江姜如田浩
Owner NAT UNIV OF DEFENSE TECH
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