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Method for the surface sulfurization of a CIGS layer

A technology of copper indium gallium selenium and process method, which is applied in the field of manufacturing copper indium gallium selenium solar panels, can solve problems such as difficult access, hidden safety hazards for staff, increased maintenance costs of production equipment, etc., and achieve the effect of high excellent rate

Inactive Publication Date: 2016-11-23
SUNSHINE
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  • Abstract
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Problems solved by technology

[0005] However, hydrogen sulfide itself is toxic. Inhalation of high concentration hydrogen sulfide can be fatal in a short time, while low concentration hydrogen sulfide can affect the eyes, respiratory system and central nervous system. Therefore, the process needs to be carried out in a highly safe state This will result in an increase in production equipment, testing and monitoring equipment, and maintenance costs, and there will also be safety hazards for the staff
In addition, when the gas precursor is used for the process, the process takes a long time, and additional testing and control of process parameters such as gas concentration and gas flow field distribution are required. Production, stability and other requirements

Method used

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  • Method for the surface sulfurization of a CIGS layer
  • Method for the surface sulfurization of a CIGS layer
  • Method for the surface sulfurization of a CIGS layer

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Embodiment Construction

[0048] In order to have a clearer understanding of the technical features, purpose and beneficial effects of the present invention, the technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings, but it should not be construed as limiting the scope of implementation of the present invention.

[0049] image 3 It is a flowchart of a manufacturing method of a CIGS solar cell panel according to an embodiment of the present invention. Figure 4 It is a schematic diagram of a section of a CIGS solar cell unit during the manufacturing process of an embodiment of the present invention. Figure 5 It is a schematic diagram of a section of a CIGS solar cell unit according to an embodiment of the present invention. Such as image 3 , Figure 4 and Figure 5 As shown, according to an embodiment of the present invention, a method for manufacturing a CIGS solar panel is provided, wherein the CIGS solar panel includes at le...

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Abstract

The invention provides a surface sulfurization method. The method comprises the steps: a deposition technology is adopted to deposit a sulfur layer on a copper indium gallium diselenide (CIGS) layer; an annealing process is performed, and a sulfidizing processing layer is formed on the surface of the CIGS layer. Sulfur is adopted as a making material, and the safety of the method is improved. In addition, the manufacturing speed can be improved by adopting the deposition method, the working time can be reduced, and the manufacturing cost can be further reduced. The method makes that the surface of the CIGS layer is converted to CIGSxSe1-x. By doing so, the power generation efficiency and performance of a CIGSe solar cell is enhanced.

Description

technical field [0001] The invention relates to a method for manufacturing a copper indium gallium selenide (CIGSe) solar cell panel, in particular to a process method for surface vulcanization of a copper indium gallium selenide layer, which converts the surface of a copper indium gallium selenide layer into a copper indium gallium sulfide selenide (CIGS x Se 1-x ) to improve the power generation efficiency and performance of CIGS solar cells. Background technique [0002] Among the materials of thin-film solar cells, CIGSe (copper indium gallium (di) selenide) is a compound semiconductor material composed of copper, indium, gallium, and selenium. It exists in the form of polycrystalline thin films. It is the main light-absorbing material in solar cells. It is a p-type semiconductor. It is usually combined with an n-type semiconductor to form a p-n junction, which can separate the electron-hole pairs generated by light absorption, and collect current at the positive and ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0749H01L31/032H01L31/18
CPCH01L31/0322H01L31/0749H01L31/18Y02E10/541Y02P70/50
Inventor 侯惟仁陈梓斌李升翰郭峻江
Owner SUNSHINE
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