Continuously tunable laser device based on stimulated Raman scattering effect

A technology of stimulated Raman scattering and tuning lasers, which is applied in the direction of laser scattering effect, lasers, laser components, etc., can solve the problem of complex and expensive growth process, ranging from hundreds of thousands to several million, and achieve Enhanced conversion efficiency, low manufacturing cost, and high conversion efficiency

Inactive Publication Date: 2016-11-30
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Continuously tunable lasers based on vertical cavity surface emitting semiconductor lasers use semiconductor materials as the laser gain medium, and the growth process is relatively complicated, and the cooling of vertical cavity surface emitting semiconductor lasers is still being explored
And the market price of the above-mentioned continuously tunable laser is quite expensive, ranging from hundreds of thousands to several million

Method used

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  • Continuously tunable laser device based on stimulated Raman scattering effect
  • Continuously tunable laser device based on stimulated Raman scattering effect
  • Continuously tunable laser device based on stimulated Raman scattering effect

Examples

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Embodiment 1

[0030] figure 1 is a structural schematic diagram of a continuously tunable laser based on the stimulated Raman scattering effect disclosed in the present invention, as shown in figure 1 As shown, this embodiment discloses a continuously tunable laser based on the stimulated Raman scattering effect, using a coupling straight cavity structure to separate the fundamental wave resonator from the Raman resonator, and placing fiber-coupled semiconductor lasers in sequence on the optical path 1. An end-pumped beam coupling system composed of a first convex lens 2 and a second convex lens 3, an injection lens 4, a laser gain medium 5, a Q-switching device 6, an optical tuning device 7, an intermediate lens 8, a Raman gain medium 9 and The output lens 10 is cooled by circulating water for cooling the components in the laser system.

[0031] If the pulsed laser needs to be generated in the laser, it is formed by modulating the fundamental frequency laser by the Q-switching device 6. T...

Embodiment 2

[0049] If the Q-switching device 6 adopts a crystal material with a saturable absorption effect, when it has the same matrix as the laser gain medium 5, a bonded crystal 11 can be used to make it not only have the effect of the laser gain medium 5 but also have passive modulation. Q's Q-switching device 6 acts.

[0050] figure 2 It is a structural schematic diagram of another improved continuously tunable laser based on the stimulated Raman scattering effect disclosed in the present invention, as shown in figure 2 As shown, this embodiment discloses another improved continuously tunable laser based on the stimulated Raman scattering effect. When the matrix is ​​the same, the bonded crystal 11 formed by thermal bonding technology can replace the laser gain medium 5 and the Q-switching device 6, so as to achieve the condition of forming pulsed fundamental frequency optical oscillation and obtain pulsed Raman laser output;

[0051] If the laser gain medium 5 and the Q-switchi...

Embodiment 3

[0054] according to figure 1 A continuously tunable laser based on the stimulated Raman scattering effect is shown, which is used to output a continuously tunable 1.1 μm band laser.

[0055] select image 3 Dimensions shown are 4 x 4 x 4 mm, Yb doped with 5% Yb with a broad emission spectrum 3+ : YAG crystal is used as the laser gain medium 5, the Q-switching device 6 can be an acousto-optic Q-switcher (including a driving power supply), and the optical tuning device 7 can be MgF 2 Birefringence filter, Raman gain medium 9 can be 3×3×30mm, a-cut YVO 4 crystals. The dielectric film coated on the injection lens 4 has high transmission for pump light (940nm or 970nm) and high reflection for fundamental frequency light (1029-1049nm) and Raman light (1132-1158nm), and the dielectric film coated on the intermediate lens 8 is relatively Frequency light (1029-1049nm) high transmission and Raman light (1132-1158nm) high reflection, the dielectric film plated on the output lens 10 i...

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Abstract

The invention discloses a continuously tunable laser device based on a stimulated Raman scattering effect. The laser device comprises a semiconductor laser pump source with fiber-coupled output, an end face pump light beam coupling system composed of a first convex lens and a second convex lens, an injection lens, a laser gain medium (or a bonding crystal), a Q-switched device, an optical tuning device, a middle lens, a Raman gain medium and an output lens. A method for achieving continuously tunable laser by the laser device comprises the steps of stimulating the laser gain medium with a wide emission line by the semiconductor pump source with a specific wavelength to generate fundamental frequency light, continuously tuning the frequency of the fundamental frequency light by using the optical tuning device, and when the fundamental frequency light enters a Raman resonant cavity, shifting the frequency of the fundamental frequency light to be continuously tunable laser with the longer wavelength for outputting via stimulated Raman scattering. The laser device expands the wavelength range of the continuously tunable laser, and has wide applications in aspects of spectroscopy, biomedicine and pollution monitoring.

Description

technical field [0001] The invention relates to the technical field related to lasers, in particular to a continuously tunable laser based on the stimulated Raman scattering effect. Background technique [0002] The Stimulated Raman Scattering (SRS) effect based on the third-order nonlinear effect is an inelastic optical effect generated during the interaction between light and matter. When the fundamental frequency light passes through the Raman gain medium with stimulated Raman scattering effect, the frequency of the fundamental frequency light can be shifted to Stokes (Stokes) spectral line output with longer wavelength or anti-Stokes with shorter wavelength Anti-Stokes spectral line output, so the stimulated Raman scattering effect can be used to effectively expand the laser output range of existing lasers. In general, it is possible to extend the 1μm band or 1.3μm band near-infrared laser generated by semiconductor laser pumped laser gain medium to the 1.1-1.2μm band o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/30H01S3/082
CPCH01S3/30H01S3/082H01S3/0823
Inventor 江炜朱思祁汪一川陈振强李真尹浩李安明
Owner JINAN UNIVERSITY
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