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Uncooled infrared 3D MEMS system structure and manufacturing method thereof

An uncooled infrared, system structure technology, applied in the field of uncooled infrared 3D MEMS structure, can solve the problems of the size of the receiving pixel cannot solve the problem of device flattening, metal interconnection difficulties, and device performance is not degraded.

Active Publication Date: 2016-12-14
YANTAI RAYTRON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide an uncooled infrared 3D MEMS system structure and its manufacturing method. The purpose is to solve the problem that the traditional structure cannot be flattened due to the reduction of the pixel size after adopting the new MEMS structure, and Solve the problem of difficult metal interconnection caused by the multi-layer process, and solve the problem of maintaining the area of ​​vanadium oxide as much as possible and reducing the thermal conductivity of the bridge legs after the device pixel is reduced, so as to ensure that the device performance is not degraded

Method used

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  • Uncooled infrared 3D MEMS system structure and manufacturing method thereof
  • Uncooled infrared 3D MEMS system structure and manufacturing method thereof
  • Uncooled infrared 3D MEMS system structure and manufacturing method thereof

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Embodiment 1

[0068] This embodiment proposes an uncooled infrared 3D MEMS system structure including a dielectric layer 2, a reflective layer 1, a first sacrificial layer 4 and a second sacrificial layer 14, the middle of the dielectric layer 2 is provided with a groove, and the reflective layer 1 Located on the upper surface of the groove in the middle of the dielectric layer 2, above the reflective layer 1 are the first sacrificial layer 4 and the second sacrificial layer 14 in sequence, and the first sacrificial layer 4 is located in the groove in the middle of the dielectric layer 2;

[0069] The dielectric layer 2 is used to provide a substrate for the uncooled infrared 3D MEMS system structure;

[0070] The reflective layer 1 is used to realize the infrared reflection function of the uncooled infrared 3D MEMS system;

[0071] The first sacrificial layer 4 and the second sacrificial layer 14 are used to carry additional functional structures, and are released after the structures are ...

Embodiment 2

[0093] Such as Figure 19 As shown, the present embodiment proposes a fabrication method of an uncooled infrared 3D MEMS system structure, the fabrication method comprising:

[0094] S1. Perform sensor process interface processing on the reflective layer and the detector;

[0095] S2, making a flattened first sacrificial layer and an additional structure carried on the first sacrificial layer;

[0096] S3, making the second sacrificial layer and the top layer structure;

[0097] S4. Release the overall structure.

[0098] In this embodiment, the structure of the first sacrificial layer is ingeniously integrated with the circuit, and the structure of the first sacrificial layer is buried in the medium of the circuit for production, which solves the problem of unevenness of the detector and is beneficial to the subsequent small Dimension line width and small pixel production. During the manufacturing process, the present invention makes the traditional three-layer structure ...

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Abstract

The invention relates to an uncooled infrared 3D MEMS system structure and a manufacturing method thereof, relates to the field of uncooled infrared 3D MEMS structures, and aims to solve the problem that the traditional structure cannot solve the device planarization due to the fact that the pixel size is reduced and solve the problem that metal interconnection is difficult due to a multi-layer process after a new MEMS structure is adopted, keep the area of vanadium oxide as much as possible, reduce thermal conductance of a bridge leg, and ensure that the device performance is not reduced after the device pixel is reduced in size. A honeycomb structure is adopted; an infrared absorption factor is increased; a groove is arranged in the middle part of a medium layer; a reflection layer is positioned on the upper surface of the groove in the middle part of the medium layer; a first sacrificial layer and a second sacrificial layer are sequentially over the reflection layer; furthermore, the first sacrificial layer is positioned in the groove in the middle part of the medium layer; the first sacrificial layer structure is manufactured by being embedded in a medium of a circuit; and thus, subsequent manufacturing of small dimension line width and small pixels is facilitated.

Description

technical field [0001] The invention relates to the field of uncooled infrared 3D MEMS structure. Background technique [0002] Uncooled infrared detectors (uncooled infrared bolometers) have been widely used in civilian fields, such as fire protection, automotive assistance, forest fire prevention, field detection, and environmental protection, in addition to military applications. [0003] With the widespread promotion of application fields, whether in military or civilian fields, the requirements for imaging quality are getting higher and higher, and the resolution of pixel elements is also required to be higher. It is necessary to increase the pixel density and performance of devices. To improve pixel density and resolution, it is necessary to follow Moore's Law to compress the unit area of ​​pixels, and compressing the unit area of ​​pixels will compress the area and volume of thermal conduction and heat-sensitive films (vanadium oxide and amorphous silicon). Mutual co...

Claims

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Application Information

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IPC IPC(8): B81B7/00B81C1/00
CPCB81B7/0006B81B7/0009B81C1/00095B81C1/00476
Inventor 甘先锋杨水长王宏臣王鹏孙瑞山陈文礼
Owner YANTAI RAYTRON TECH
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