Uncooled infrared 3D MEMS system structure and manufacturing method thereof
An uncooled infrared, system structure technology, applied in the field of uncooled infrared 3D MEMS structure, can solve the problems of the size of the receiving pixel cannot solve the problem of device flattening, metal interconnection difficulties, and device performance is not degraded.
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Embodiment 1
[0068] This embodiment proposes an uncooled infrared 3D MEMS system structure including a dielectric layer 2, a reflective layer 1, a first sacrificial layer 4 and a second sacrificial layer 14, the middle of the dielectric layer 2 is provided with a groove, and the reflective layer 1 Located on the upper surface of the groove in the middle of the dielectric layer 2, above the reflective layer 1 are the first sacrificial layer 4 and the second sacrificial layer 14 in sequence, and the first sacrificial layer 4 is located in the groove in the middle of the dielectric layer 2;
[0069] The dielectric layer 2 is used to provide a substrate for the uncooled infrared 3D MEMS system structure;
[0070] The reflective layer 1 is used to realize the infrared reflection function of the uncooled infrared 3D MEMS system;
[0071] The first sacrificial layer 4 and the second sacrificial layer 14 are used to carry additional functional structures, and are released after the structures are ...
Embodiment 2
[0093] Such as Figure 19 As shown, the present embodiment proposes a fabrication method of an uncooled infrared 3D MEMS system structure, the fabrication method comprising:
[0094] S1. Perform sensor process interface processing on the reflective layer and the detector;
[0095] S2, making a flattened first sacrificial layer and an additional structure carried on the first sacrificial layer;
[0096] S3, making the second sacrificial layer and the top layer structure;
[0097] S4. Release the overall structure.
[0098] In this embodiment, the structure of the first sacrificial layer is ingeniously integrated with the circuit, and the structure of the first sacrificial layer is buried in the medium of the circuit for production, which solves the problem of unevenness of the detector and is beneficial to the subsequent small Dimension line width and small pixel production. During the manufacturing process, the present invention makes the traditional three-layer structure ...
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