Sapphire polishing process

A sapphire and process technology, applied in the field of sapphire polishing, can solve the problems affecting the large-scale industrial application of sapphire crystal slices, low processing efficiency, and hindering sapphire, so as to save polishing time, save costs, and increase stability.

Inactive Publication Date: 2017-01-04
TDG YINXIA NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The hardness of sapphire crystal is very high, Mohs hardness is 9, second only to diamond, it has good light transmission, thermal conductivity and electrical insulation, good mechanical and mechanical properties, and has the characteristics of wear resistance and wind erosion resistance, sapphire The melting point of the crystal is 2050°C, the boiling point is 3500°C, and the maximum operating temperature can reach 1900°C. The sapphire crystal still has good stability at high temperatures, and has good transmittance in the range of visible and infrared light. LEDs, mobile phones and other optoelectronics, communications, and national defense fields are widely used, and all require sapphire to have good surface processing accuracy and surface integrity. Due to the high hardness and high chemical stability of sapphire crystals, sapphire has high efficiency and low damage. Processing technology has become the main obstacle hindering the widespread application of sapphire. At present, the growth technology of sapphire crystals with a size of more than 100kg is becoming mature. In order to obtain substrates for blue LED chips or sapphire windows for other applications, sapphire After the crystals go through the process of digging, cutting and grinding, they need to be precision polished to reduce the surface roughness. At present, only chemical mechanical polishing technology can obtain lower surface roughness and higher material removal rate at a lower cost. However, due to the high hardness and high chemical stability of sapphire crystals, the whole process is very time-consuming, labor-intensive, and low in processing efficiency, which seriously affects the large-scale industrial application of sapphire crystal sheets.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A kind of sapphire polishing process, specifically comprises the following steps:

[0020] S1, raw material pretreatment, the sapphire raw material is put into the grinder, and abrasive is added, wherein the abrasive is selected as a polycrystalline diamond powder with a diameter of 20um and the content is 25%, pure water 68%, composite active agent 0.5% and regulator 6.5%, Grinding time is 6h, obtains sapphire coarse material;

[0021] S2, fine grinding, with the sapphire abrasive obtained in S1, the polycrystalline diamond powder content of 1um in diameter is 25%, pure water 68%, composite active agent 0.5% and regulator 6.5%, and the grinding time is 4h to obtain sapphire fine abrasive;

[0022] S3, polishing, the sapphire fine abrasive obtained in S2 is placed on a polishing machine, the number of revolutions of the polishing machine is 80rpm, and when the pressure value is 4psi, the ratio of the aluminum oxide powder within the particle size of 150nm to pure water...

Embodiment 2

[0026] A kind of sapphire polishing process, specifically comprises the following steps:

[0027] S1, raw material pretreatment, sapphire raw material is put into grinding machine, adds abrasive, and wherein abrasive selects the polycrystalline diamond powder content that diameter is 25um to be 28%, pure water 66%, compound active agent 0.4% and regulator 5.6%, Grinding time is 7h, obtains sapphire coarse material;

[0028] S2, fine grinding, with the sapphire abrasive obtained in S1, through the polycrystalline diamond powder with a diameter of 0.5, the content is 26%, pure water 66%, composite active agent 0.5% and regulator 7.5%, and the grinding time is 4h to obtain sapphire fine abrasive;

[0029] S3, polishing, the sapphire fine abrasive obtained in S2 is placed on a polishing machine, the number of revolutions of the polishing machine is 130rpm, and when the pressure value is 5psi, the ratio of the aluminum oxide powder within the particle size of 200nm to pure water i...

Embodiment 3

[0033] A kind of sapphire polishing process, specifically comprises the following steps:

[0034] S1, raw material pretreatment, the sapphire raw material is put into the grinder, and abrasive material is added, wherein the abrasive material selects polycrystalline diamond micropowder with a diameter of 25um and the content is 23%, pure water 70%, composite active agent 0.5% and regulator 6.5%, Grinding time is 8h, obtains sapphire coarse material;

[0035] S2, fine grinding, with the sapphire abrasive obtained in S1, through the polycrystalline diamond powder with a diameter of 0.5, the content is 23%, pure water 70%, composite active agent 0.5% and regulator 6.5%, and the grinding time is 5h to obtain sapphire fine abrasive;

[0036] S3, polishing, the sapphire fine abrasive obtained in S2 is placed on a polishing machine, the number of revolutions of the polishing machine is 150rpm, and when the pressure value is 7psi, the ratio of the aluminum oxide powder within the part...

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Abstract

The invention discloses a sapphire polishing process. The sapphire polishing process comprises the following steps: performing raw material pre-treatment, performing accurate grinding, polishing, cleaning, testing and the like. According to the sapphire polishing process, the surface of a raw material is ground through the raw material pre-treatment and accurate grinding processes; the difficulty in polishing is reduced; the polishing time is saved; a polishing solution which is prepared from aluminium oxide is high in hardness, and a chemical reaction is produced in a process of rubbing a sapphire, so that CMP (Chemical Mechanical Polishing) is performed effectively; the stability is high; the cost is low; the stability of the polishing solution is improved through an FA/O compound active agent; the flatness of a polished surface and the work efficiency are improved; through experiments, the removal rate of the polishing is 6 mu m/hr when the pressure value is 4 psi, the rotating speed is 60 rpm, and the pH value is 10; the removal rate of the polishing is 8 mu m/hr when the pressure value is 5 psi, the rotating speed is 60 rpm, and the pH value is 10. The process flow of the sapphire polishing process is simple; meanwhile, the cost is saved; the sapphire polishing process is worth being popularized in the future.

Description

technical field [0001] The invention relates to the technical field of sapphire polishing, in particular to a sapphire polishing process. Background technique [0002] The hardness of sapphire crystal is very high, Mohs hardness is 9, second only to diamond, it has good light transmission, thermal conductivity and electrical insulation, good mechanical and mechanical properties, and has the characteristics of wear resistance and wind erosion resistance, sapphire The melting point of the crystal is 2050°C, the boiling point is 3500°C, and the maximum operating temperature can reach 1900°C. The sapphire crystal still has good stability at high temperatures, and has good transmittance in the range of visible and infrared light. LEDs, mobile phones and other optoelectronics, communications, and national defense fields are widely used, and all require sapphire to have good surface processing accuracy and surface integrity. Due to the high hardness and high chemical stability of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B24B37/04B24B29/02
CPCB24B1/00B24B29/02B24B37/04
Inventor 滕斌段斌斌程佳宝朱宏杰孙亚雄倪浩然
Owner TDG YINXIA NEW MATERIAL CO LTD
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